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CPH5871-TL-W

CPH5871-TL-W onsemi

cph5871-d.pdf Hersteller: onsemi
Description: MOSFET N-CH 30V 3.5A 5CPH
Packaging: Bulk
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 52mOhm @ 2A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 900mW (Ta)
Supplier Device Package: 5-CPH
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1721+0.4 EUR
Mindestbestellmenge: 1721
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Technische Details CPH5871-TL-W onsemi

Description: MOSFET N-CH 30V 3.5A 5CPH, Packaging: Tape & Reel (TR), Package / Case: SC-74A, SOT-753, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 125°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), Rds On (Max) @ Id, Vgs: 52mOhm @ 2A, 4.5V, FET Feature: Schottky Diode (Isolated), Power Dissipation (Max): 900mW (Ta), Supplier Device Package: 5-CPH, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V.

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CPH5871-TL-W CPH5871-TL-W Hersteller : ON Semiconductor CPH5871-D-1803494.pdf MOSFET NCH+SBD 1.8V DRIVE SERIES
auf Bestellung 1673 Stücke:
Lieferzeit 14-28 Tag (e)
CPH5871-TL-W Hersteller : ON Semiconductor 36581614559177080cph5871-d.pdf Trans MOSFET N-CH Si 30V 3.5A 5-Pin CPH T/R
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CPH5871-TL-W CPH5871-TL-W Hersteller : onsemi cph5871-d.pdf Description: MOSFET N-CH 30V 3.5A 5CPH
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 52mOhm @ 2A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 900mW (Ta)
Supplier Device Package: 5-CPH
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V
Produkt ist nicht verfügbar