CPH6318-TL-E onsemi
Hersteller: onsemiDescription: MOSFET P-CH 12V 6A 6CPH
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 34mOhm @ 3A, 4.5V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-CPH
Part Status: Active
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 6 V
auf Bestellung 105460 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2664+ | 0.18 EUR |
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Technische Details CPH6318-TL-E onsemi
Description: MOSFET P-CH 12V 6A 6CPH, Packaging: Bulk, Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), Rds On (Max) @ Id, Vgs: 34mOhm @ 3A, 4.5V, Power Dissipation (Max): 1.6W (Ta), Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: 6-CPH, Part Status: Active, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 6 V.
Weitere Produktangebote CPH6318-TL-E
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
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CPH6318-TL-E | Hersteller : ONSEMI |
Description: ONSEMI - CPH6318-TL-E - HIGH-SPEED SWITCHING APPLICATIONS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 105460 Stücke: Lieferzeit 14-21 Tag (e) |