CPH6355-TL-H onsemi
Hersteller: onsemiDescription: POWER FIELD-EFFECT TRANSISTOR, P
Packaging: Bulk
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 169mOhm @ 1.5A, 10V
Power Dissipation (Max): 1.6W (Ta)
Supplier Device Package: 6-CPH
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 172 pF @ 10 V
auf Bestellung 120000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2219+ | 0.23 EUR |
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Technische Details CPH6355-TL-H onsemi
Description: POWER FIELD-EFFECT TRANSISTOR, P, Packaging: Bulk, Package / Case: SOT-23-6, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), Rds On (Max) @ Id, Vgs: 169mOhm @ 1.5A, 10V, Power Dissipation (Max): 1.6W (Ta), Supplier Device Package: 6-CPH, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 172 pF @ 10 V.
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