CRS10I40A(TE85L,QM Toshiba Semiconductor and Storage
Hersteller: Toshiba Semiconductor and StorageDescription: DIODE GEN PURP 40V 1A S-FLAT
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 35pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: S-FLAT (1.6x3.5)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 700 mA
Current - Reverse Leakage @ Vr: 60 µA @ 40 V
auf Bestellung 2799 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 25+ | 0.72 EUR |
| 32+ | 0.56 EUR |
| 100+ | 0.34 EUR |
| 500+ | 0.31 EUR |
| 1000+ | 0.21 EUR |
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Technische Details CRS10I40A(TE85L,QM Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 40V 1A S-FLAT, Packaging: Tape & Reel (TR), Package / Case: SOD-123F, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Capacitance @ Vr, F: 35pF @ 10V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: S-FLAT (1.6x3.5), Operating Temperature - Junction: 150°C (Max), Voltage - DC Reverse (Vr) (Max): 40 V, Voltage - Forward (Vf) (Max) @ If: 490 mV @ 700 mA, Current - Reverse Leakage @ Vr: 60 µA @ 40 V.
Weitere Produktangebote CRS10I40A(TE85L,QM nach Preis ab 0.17 EUR bis 0.84 EUR
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Produkt ist nicht verfügbar |
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CRS10I40A(TE85L,QM | Hersteller : Toshiba Semiconductor and Storage |
Description: DIODE GEN PURP 40V 1A S-FLAT Packaging: Tape & Reel (TR) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 35pF @ 10V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: S-FLAT (1.6x3.5) Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 490 mV @ 700 mA Current - Reverse Leakage @ Vr: 60 µA @ 40 V |
Produkt ist nicht verfügbar |