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CSD13201W10

CSD13201W10 Texas Instruments

suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd13201w10 Hersteller: Texas Instruments
Description: MOSFET N-CH 12V 1.6A 4DSBGA
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA, DSBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 34mOhm @ 1A, 4.5V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 4-DSBGA (1x1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 462 pF @ 6 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.21 EUR
6000+ 0.2 EUR
9000+ 0.18 EUR
Mindestbestellmenge: 3000
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Technische Details CSD13201W10 Texas Instruments

Description: MOSFET N-CH 12V 1.6A 4DSBGA, Packaging: Tape & Reel (TR), Package / Case: 4-UFBGA, DSBGA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta), Rds On (Max) @ Id, Vgs: 34mOhm @ 1A, 4.5V, Power Dissipation (Max): 1.2W (Ta), Vgs(th) (Max) @ Id: 1.1V @ 250µA, Supplier Device Package: 4-DSBGA (1x1), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 462 pF @ 6 V.

Weitere Produktangebote CSD13201W10 nach Preis ab 0.23 EUR bis 1.14 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
CSD13201W10 CSD13201W10 Hersteller : Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd13201w10 Description: MOSFET N-CH 12V 1.6A 4DSBGA
Packaging: Cut Tape (CT)
Package / Case: 4-UFBGA, DSBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 34mOhm @ 1A, 4.5V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 4-DSBGA (1x1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 462 pF @ 6 V
auf Bestellung 31694 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
23+0.79 EUR
29+ 0.61 EUR
100+ 0.37 EUR
500+ 0.34 EUR
1000+ 0.23 EUR
Mindestbestellmenge: 23
CSD13201W10 CSD13201W10 Hersteller : Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd13201w10 MOSFET N-CH NexFET Pwr MOSFET
auf Bestellung 7162 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
46+1.14 EUR
59+ 0.89 EUR
105+ 0.5 EUR
1000+ 0.33 EUR
3000+ 0.3 EUR
9000+ 0.27 EUR
24000+ 0.26 EUR
Mindestbestellmenge: 46
CSD13201W10 CSD13201W10 Hersteller : Texas Instruments getliterature.pdf Trans MOSFET N-CH 12V 1.6A 4-Pin DSBGA T/R
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)