CSD13302WT Texas Instruments
Hersteller: Texas Instruments
Description: MOSFET N-CH 12V 1.6A 4DSBGA
Part Status: Active
Supplier Device Package: 4-DSBGA (1x1)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 17.1mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-UFBGA, DSBGA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 862 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
| Anzahl | Preis |
|---|---|
| 250+ | 0.92 EUR |
| 500+ | 0.83 EUR |
| 750+ | 0.79 EUR |
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Technische Details CSD13302WT Texas Instruments
Description: MOSFET N-CH 12V 1.6A 4DSBGA, Part Status: Active, Supplier Device Package: 4-DSBGA (1x1), Vgs(th) (Max) @ Id: 1.3V @ 250µA, Power Dissipation (Max): 1.8W (Ta), Rds On (Max) @ Id, Vgs: 17.1mOhm @ 1A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 4-UFBGA, DSBGA, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 862 pF @ 6 V, Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 4.5 V, Drain to Source Voltage (Vdss): 12 V, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V.
Weitere Produktangebote CSD13302WT nach Preis ab 1.06 EUR bis 2.53 EUR
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CSD13302WT | Texas Instruments |
Description: MOSFET N-CH 12V 1.6A 4DSBGA Input Capacitance (Ciss) (Max) @ Vds: 862 pF @ 6 V Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 4.5 V Drain to Source Voltage (Vdss): 12 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Active Supplier Device Package: 4-DSBGA (1x1) Vgs(th) (Max) @ Id: 1.3V @ 250µA Power Dissipation (Max): 1.8W (Ta) Rds On (Max) @ Id, Vgs: 17.1mOhm @ 1A, 4.5V Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-UFBGA, DSBGA Packaging: Cut Tape (CT) |
auf Bestellung 1237 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD13302WT |
|
Hersteller: Texas Instruments
Description: MOSFET N-CH 12V 1.6A 4DSBGA
Input Capacitance (Ciss) (Max) @ Vds: 862 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: 4-DSBGA (1x1)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 17.1mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-UFBGA, DSBGA
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 12V 1.6A 4DSBGA
Input Capacitance (Ciss) (Max) @ Vds: 862 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: 4-DSBGA (1x1)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 17.1mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-UFBGA, DSBGA
Packaging: Cut Tape (CT)
auf Bestellung 1237 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 2.53 EUR |
| 12+ | 1.59 EUR |
| 100+ | 1.06 EUR |