CSD13302WT Texas Instruments
Hersteller: Texas InstrumentsDescription: MOSFET N-CH 12V 1.6A 4DSBGA
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA, DSBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 17.1mOhm @ 1A, 4.5V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 4-DSBGA (1x1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 862 pF @ 6 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 250+ | 0.92 EUR |
| 500+ | 0.83 EUR |
| 750+ | 0.79 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details CSD13302WT Texas Instruments
Description: MOSFET N-CH 12V 1.6A 4DSBGA, Packaging: Tape & Reel (TR), Package / Case: 4-UFBGA, DSBGA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta), Rds On (Max) @ Id, Vgs: 17.1mOhm @ 1A, 4.5V, Power Dissipation (Max): 1.8W (Ta), Vgs(th) (Max) @ Id: 1.3V @ 250µA, Supplier Device Package: 4-DSBGA (1x1), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 862 pF @ 6 V.
Weitere Produktangebote CSD13302WT nach Preis ab 1.06 EUR bis 2.53 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
CSD13302WT | Hersteller : Texas Instruments |
Description: MOSFET N-CH 12V 1.6A 4DSBGA Packaging: Cut Tape (CT) Package / Case: 4-UFBGA, DSBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Rds On (Max) @ Id, Vgs: 17.1mOhm @ 1A, 4.5V Power Dissipation (Max): 1.8W (Ta) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: 4-DSBGA (1x1) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 862 pF @ 6 V |
auf Bestellung 1237 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||
 |
CSD13302WT | Hersteller : Texas Instruments |
Trans MOSFET N-CH 12V 1.6A 4-Pin DSBGA T/R |
Produkt ist nicht verfügbar |
|||||||||
| CSD13302WT | Hersteller : TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 12V; 1.6A; Idm: 29A; 1.8W; DSBGA4 On-state resistance: 25.8mΩ Type of transistor: N-MOSFET Power dissipation: 1.8W Polarisation: unipolar Mounting: SMD Case: DSBGA4 Technology: NexFET™ Kind of channel: enhancement Gate-source voltage: ±10V Pulsed drain current: 29A Kind of package: reel; tape Drain-source voltage: 12V Drain current: 1.6A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||
 |
CSD13302WT | Hersteller : Texas Instruments |
MOSFET 12-V, N channel NexFET™ power MOSFET, single WLP 1 mm x 1 mm, 17.1 mOhm 4-DSBGA -55 to 150 |
Produkt ist nicht verfügbar |
|||||||||
| CSD13302WT | Hersteller : TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 12V; 1.6A; Idm: 29A; 1.8W; DSBGA4 On-state resistance: 25.8mΩ Type of transistor: N-MOSFET Power dissipation: 1.8W Polarisation: unipolar Mounting: SMD Case: DSBGA4 Technology: NexFET™ Kind of channel: enhancement Gate-source voltage: ±10V Pulsed drain current: 29A Kind of package: reel; tape Drain-source voltage: 12V Drain current: 1.6A |
Produkt ist nicht verfügbar |