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CSD13306W

CSD13306W Texas Instruments

suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd13306w Hersteller: Texas Instruments
MOSFETs 12-V, N channel NexFET power MOSFET, single WLP 1 mm x 1.5 mm, 10.2 mOhm 6-DSBGA
auf Bestellung 2808 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+0.83 EUR
10+0.71 EUR
100+0.49 EUR
500+0.39 EUR
1000+0.32 EUR
3000+0.21 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details CSD13306W Texas Instruments

Description: MOSFET N-CH 12V 3.5A 6DSBGA, Packaging: Tape & Reel (TR), Package / Case: 6-UFBGA, DSBGA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), Rds On (Max) @ Id, Vgs: 10.2mOhm @ 1.5A, 4.5V, Power Dissipation (Max): 1.9W (Ta), Vgs(th) (Max) @ Id: 1.3V @ 250µA, Supplier Device Package: 6-DSBGA (1x1.5), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 6 V.

Weitere Produktangebote CSD13306W nach Preis ab 0.35 EUR bis 1.00 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
CSD13306W CSD13306W Hersteller : Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd13306w Description: MOSFET N-CH 12V 3.5A 6DSBGA
Packaging: Cut Tape (CT)
Package / Case: 6-UFBGA, DSBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 10.2mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 6-DSBGA (1x1.5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 6 V
auf Bestellung 2865 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
18+1.00 EUR
24+0.74 EUR
100+0.52 EUR
500+0.41 EUR
1000+0.35 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
CSD13306W CSD13306W Hersteller : Texas Instruments getliterature.pdf Trans MOSFET N-CH 12V 3.5A 6-Pin DSBGA T/R
Produkt ist nicht verfügbar
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CSD13306W CSD13306W Hersteller : Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd13306w Description: MOSFET N-CH 12V 3.5A 6DSBGA
Packaging: Tape & Reel (TR)
Package / Case: 6-UFBGA, DSBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 10.2mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 6-DSBGA (1x1.5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 6 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH