CSD13306WT Texas Instruments
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 250+ | 0.69 EUR |
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Technische Details CSD13306WT Texas Instruments
Description: MOSFET N-CH 12V 3.5A 6DSBGA, Packaging: Tape & Reel (TR), Package / Case: 6-UFBGA, DSBGA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), Rds On (Max) @ Id, Vgs: 10.2mOhm @ 1.5A, 4.5V, Power Dissipation (Max): 1.9W (Ta), Vgs(th) (Max) @ Id: 1.3V @ 250µA, Supplier Device Package: 6-DSBGA (1x1.5), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 6 V.
Weitere Produktangebote CSD13306WT nach Preis ab 0.69 EUR bis 1.76 EUR
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CSD13306WT | Hersteller : Texas Instruments |
 Description: MOSFET N-CH 12V 3.5A 6DSBGAPackaging: Tape & Reel (TR) Package / Case: 6-UFBGA, DSBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 10.2mOhm @ 1.5A, 4.5V Power Dissipation (Max): 1.9W (Ta) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: 6-DSBGA (1x1.5) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 6 V |
auf Bestellung 1750 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD13306WT | Hersteller : Texas Instruments |
MOSFET 12V N-Channel NexFET Power MOSFET |
auf Bestellung 972 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD13306WT | Hersteller : Texas Instruments |
Description: MOSFET N-CH 12V 3.5A 6DSBGA Packaging: Cut Tape (CT) Package / Case: 6-UFBGA, DSBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 10.2mOhm @ 1.5A, 4.5V Power Dissipation (Max): 1.9W (Ta) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: 6-DSBGA (1x1.5) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 6 V |
auf Bestellung 2085 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD13306WT | Hersteller : Texas Instruments |
Trans MOSFET N-CH 12V 3.5A 6-Pin DSBGA T/R |
auf Bestellung 205 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD13306WT | Hersteller : Texas Instruments |
Trans MOSFET N-CH 12V 3.5A 6-Pin DSBGA T/R |
auf Bestellung 205 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD13306WT | Hersteller : Texas Instruments |
Trans MOSFET N-CH 12V 3.5A 6-Pin DSBGA T/R |
auf Bestellung 250 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD13306WT | Hersteller : Texas Instruments |
Trans MOSFET N-CH 12V 3.5A 6-Pin DSBGA T/R |
Produkt ist nicht verfügbar |
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CSD13306WT | Hersteller : Texas Instruments |
Trans MOSFET N-CH 12V 3.5A 6-Pin DSBGA T/R |
Produkt ist nicht verfügbar |
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| CSD13306WT | Hersteller : TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 12V; 3.5A; Idm: 44A; 1.9W; DSBGA6 Kind of package: reel; tape On-state resistance: 15.5mΩ Type of transistor: N-MOSFET Power dissipation: 1.9W Polarisation: unipolar Drain current: 3.5A Drain-source voltage: 12V Technology: NexFET™ Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: 44A Case: DSBGA6 Mounting: SMD Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| CSD13306WT | Hersteller : TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 12V; 3.5A; Idm: 44A; 1.9W; DSBGA6 Kind of package: reel; tape On-state resistance: 15.5mΩ Type of transistor: N-MOSFET Power dissipation: 1.9W Polarisation: unipolar Drain current: 3.5A Drain-source voltage: 12V Technology: NexFET™ Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: 44A Case: DSBGA6 Mounting: SMD |
Produkt ist nicht verfügbar |