CSD13306WT Texas Instruments
Hersteller: Texas InstrumentsDescription: MOSFET N-CH 12V 3.5A 6DSBGA
Packaging: Tape & Reel (TR)
Package / Case: 6-UFBGA, DSBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 10.2mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 6-DSBGA (1x1.5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 6 V
auf Bestellung 750 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 250+ | 0.9 EUR |
| 500+ | 0.82 EUR |
| 750+ | 0.78 EUR |
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Technische Details CSD13306WT Texas Instruments
Description: MOSFET N-CH 12V 3.5A 6DSBGA, Packaging: Tape & Reel (TR), Package / Case: 6-UFBGA, DSBGA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), Rds On (Max) @ Id, Vgs: 10.2mOhm @ 1.5A, 4.5V, Power Dissipation (Max): 1.9W (Ta), Vgs(th) (Max) @ Id: 1.3V @ 250µA, Supplier Device Package: 6-DSBGA (1x1.5), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 6 V.
Weitere Produktangebote CSD13306WT nach Preis ab 0.63 EUR bis 2.16 EUR
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CSD13306WT | Hersteller : Texas Instruments |
MOSFETs 12V N-Channel NexFET Power MOSFET A 595-CSD13306W |
auf Bestellung 492 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD13306WT | Hersteller : Texas Instruments |
Description: MOSFET N-CH 12V 3.5A 6DSBGA Packaging: Cut Tape (CT) Package / Case: 6-UFBGA, DSBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 10.2mOhm @ 1.5A, 4.5V Power Dissipation (Max): 1.9W (Ta) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: 6-DSBGA (1x1.5) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 6 V |
auf Bestellung 1155 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD13306WT | Hersteller : Texas Instruments |
Trans MOSFET N-CH 12V 3.5A 6-Pin DSBGA T/R |
auf Bestellung 204 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD13306WT | Hersteller : Texas Instruments |
Trans MOSFET N-CH 12V 3.5A 6-Pin DSBGA T/R |
auf Bestellung 204 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD13306WT | Hersteller : Texas Instruments |
Trans MOSFET N-CH 12V 3.5A 6-Pin DSBGA T/R |
auf Bestellung 250 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD13306WT | Hersteller : Texas Instruments |
Trans MOSFET N-CH 12V 3.5A 6-Pin DSBGA T/R |
auf Bestellung 250 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD13306WT | Hersteller : Texas Instruments |
Trans MOSFET N-CH 12V 3.5A 6-Pin DSBGA T/R |
Produkt ist nicht verfügbar |
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CSD13306WT | Hersteller : Texas Instruments |
Trans MOSFET N-CH 12V 3.5A 6-Pin DSBGA T/R |
Produkt ist nicht verfügbar |
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| CSD13306WT | Hersteller : TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 12V; 3.5A; Idm: 44A; 1.9W; DSBGA6 Pulsed drain current: 44A Gate-source voltage: ±10V Drain-source voltage: 12V Polarisation: unipolar Case: DSBGA6 Kind of channel: enhancement Technology: NexFET™ Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD On-state resistance: 15.5mΩ Power dissipation: 1.9W Drain current: 3.5A |
Produkt ist nicht verfügbar |