CSD13306WT Texas Instruments
Hersteller: Texas Instruments
Description: MOSFET N-CH 12V 3.5A 6DSBGA
Packaging: Tape & Reel (TR)
Package / Case: 6-UFBGA, DSBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 10.2mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 6-DSBGA (1x1.5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 6 V
| Anzahl | Privatkunde |
|---|---|
| 250+ | 1.09 EUR |
| 500+ | 0.99 EUR |
| 750+ | 0.94 EUR |
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Technische Details CSD13306WT Texas Instruments
Description: MOSFET N-CH 12V 3.5A 6DSBGA, Packaging: Tape & Reel (TR), Package / Case: 6-UFBGA, DSBGA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), Rds On (Max) @ Id, Vgs: 10.2mOhm @ 1.5A, 4.5V, Power Dissipation (Max): 1.9W (Ta), Vgs(th) (Max) @ Id: 1.3V @ 250µA, Supplier Device Package: 6-DSBGA (1x1.5), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 6 V.
Weitere Produktangebote CSD13306WT nach Preis ab 0.83 EUR bis 3.01 EUR
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CSD13306WT | Texas Instruments |
Description: MOSFET N-CH 12V 3.5A 6DSBGA Packaging: Cut Tape (CT) Package / Case: 6-UFBGA, DSBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 10.2mOhm @ 1.5A, 4.5V Power Dissipation (Max): 1.9W (Ta) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: 6-DSBGA (1x1.5) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 6 V |
auf Bestellung 1126 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD13306WT | Texas Instruments |
MOSFETs 12V N-Channel NexFET Power MOSFET A 595- A 595-CSD13306W |
auf Bestellung 492 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD13306WT | Texas Instruments |
Trans MOSFET N-CH 12V 3.5A 6-Pin DSBGA T/R |
auf Bestellung 204 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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CSD13306WT | Texas Instruments |
Trans MOSFET N-CH 12V 3.5A 6-Pin DSBGA T/R |
auf Bestellung 204 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 15 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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|
CSD13306WT | Texas Instruments |
Trans MOSFET N-CH 12V 3.5A 6-Pin DSBGA T/R |
auf Bestellung 250 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 250 Stücke Im Einkaufswagen Stück im Wert von UAH |
| CSD13306WT |
|
Hersteller: Texas Instruments
Description: MOSFET N-CH 12V 3.5A 6DSBGA
Packaging: Cut Tape (CT)
Package / Case: 6-UFBGA, DSBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 10.2mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 6-DSBGA (1x1.5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 6 V
Description: MOSFET N-CH 12V 3.5A 6DSBGA
Packaging: Cut Tape (CT)
Package / Case: 6-UFBGA, DSBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 10.2mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 1.9W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: 6-DSBGA (1x1.5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 11.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 6 V
auf Bestellung 1126 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.98 EUR |
| 12+ | 1.88 EUR |
| 100+ | 1.26 EUR |
| CSD13306WT |
|
Hersteller: Texas Instruments
MOSFETs 12V N-Channel NexFET Power MOSFET A 595- A 595-CSD13306W
MOSFETs 12V N-Channel NexFET Power MOSFET A 595- A 595-CSD13306W
auf Bestellung 492 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 3.01 EUR |
| 10+ | 1.89 EUR |
| 100+ | 1.09 EUR |
| 500+ | 0.94 EUR |
| 1000+ | 0.84 EUR |
| 2500+ | 0.83 EUR |
| CSD13306WT |
|
Hersteller: Texas Instruments
Trans MOSFET N-CH 12V 3.5A 6-Pin DSBGA T/R
Trans MOSFET N-CH 12V 3.5A 6-Pin DSBGA T/R
auf Bestellung 204 Stücke:
Lieferzeit 14-21 Tag (e)
| CSD13306WT |
|
Hersteller: Texas Instruments
Trans MOSFET N-CH 12V 3.5A 6-Pin DSBGA T/R
Trans MOSFET N-CH 12V 3.5A 6-Pin DSBGA T/R
auf Bestellung 204 Stücke:
Lieferzeit 14-21 Tag (e)
| CSD13306WT |
|
Hersteller: Texas Instruments
Trans MOSFET N-CH 12V 3.5A 6-Pin DSBGA T/R
Trans MOSFET N-CH 12V 3.5A 6-Pin DSBGA T/R
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)