CSD13383F4T Texas Instruments
Hersteller: Texas InstrumentsDescription: MOSFET N-CH 12V 2.9A 3PICOSTAR
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
Rds On (Max) @ Id, Vgs: 44mOhm @ 500mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: 3-PICOSTAR
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 2.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 291 pF @ 6 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 250+ | 0.78 EUR |
| 500+ | 0.68 EUR |
| 750+ | 0.65 EUR |
| 1250+ | 0.63 EUR |
| 1750+ | 0.62 EUR |
| 2500+ | 0.61 EUR |
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Technische Details CSD13383F4T Texas Instruments
Description: MOSFET N-CH 12V 2.9A 3PICOSTAR, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), Rds On (Max) @ Id, Vgs: 44mOhm @ 500mA, 4.5V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 1.25V @ 250µA, Supplier Device Package: 3-PICOSTAR, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 2.6 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 291 pF @ 6 V.
Weitere Produktangebote CSD13383F4T nach Preis ab 0.56 EUR bis 1.85 EUR
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CSD13383F4T | Hersteller : Texas Instruments |
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auf Bestellung 986 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD13383F4T | Hersteller : Texas Instruments |
Description: MOSFET N-CH 12V 2.9A 3PICOSTAR Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta) Rds On (Max) @ Id, Vgs: 44mOhm @ 500mA, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.25V @ 250µA Supplier Device Package: 3-PICOSTAR Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 2.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 291 pF @ 6 V |
auf Bestellung 4252 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD13383F4T | Hersteller : Texas Instruments |
Trans MOSFET N-CH 12V 2.9A 3-Pin PicoStar T/R |
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| CSD13383F4T | Hersteller : TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 12V; 2.9A; Idm: 18.5A; 500mW On-state resistance: 65mΩ Type of transistor: N-MOSFET Power dissipation: 0.5W Polarisation: unipolar Mounting: SMD Case: PICOSTAR3 Technology: NexFET™ Kind of channel: enhancement Gate-source voltage: ±10V Pulsed drain current: 18.5A Kind of package: reel; tape Drain-source voltage: 12V Drain current: 2.9A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| CSD13383F4T | Hersteller : TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 12V; 2.9A; Idm: 18.5A; 500mW On-state resistance: 65mΩ Type of transistor: N-MOSFET Power dissipation: 0.5W Polarisation: unipolar Mounting: SMD Case: PICOSTAR3 Technology: NexFET™ Kind of channel: enhancement Gate-source voltage: ±10V Pulsed drain current: 18.5A Kind of package: reel; tape Drain-source voltage: 12V Drain current: 2.9A |
Produkt ist nicht verfügbar |