CSD16323Q3C Texas Instruments

Description: MOSFET N-CH 25V 21A/60A 8SON, Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 12.5 V, Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 4.5 V, Drain to Source Voltage (Vdss): 25 V, Vgs (Max): +10V, -8V, Drive Voltage (Max Rds On, Min Rds On): 3V, 8V, Part Status: Obsolete, Supplier Device Package: 8-SON-EP (3x3), Vgs(th) (Max) @ Id: 1.4V @ 250µA, Power Dissipation (Max): 3W (Ta), Rds On (Max) @ Id, Vgs: 4.5mOhm @ 24A, 8V, Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 60A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).