Weitere Produktangebote CSD16327Q3T nach Preis ab 1.13 EUR bis 3.97 EUR
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CSD16327Q3T | Texas Instruments |
 Description: MOSFET N-CH 25V 60A 8VSONPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 24A, 8V Power Dissipation (Max): 74W (Tc) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: 8-VSON-CLIP (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 3V, 8V Vgs (Max): +10V, -8V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 12.5 V |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD16327Q3T | Texas Instruments |
Description: MOSFET N-CH 25V 60A 8VSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 24A, 8V Power Dissipation (Max): 74W (Tc) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: 8-VSON-CLIP (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 3V, 8V Vgs (Max): +10V, -8V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 12.5 V |
auf Bestellung 4087 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD16327Q3T | Texas Instruments |
MOSFETs 25-V N channel NexF ET power MOSFET si A A 595-CSD16327Q3 |
auf Bestellung 2753 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD16327Q3T |
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Hersteller: Texas Instruments
Description: MOSFET N-CH 25V 60A 8VSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 24A, 8V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 8-VSON-CLIP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3V, 8V
Vgs (Max): +10V, -8V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 12.5 V
Description: MOSFET N-CH 25V 60A 8VSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 24A, 8V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 8-VSON-CLIP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3V, 8V
Vgs (Max): +10V, -8V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 12.5 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 250+ | 1.5 EUR |
| 500+ | 1.37 EUR |
| 750+ | 1.3 EUR |
| 1250+ | 1.23 EUR |
| 1750+ | 1.18 EUR |
| 2500+ | 1.13 EUR |
| CSD16327Q3T |
|
Hersteller: Texas Instruments
Description: MOSFET N-CH 25V 60A 8VSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 24A, 8V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 8-VSON-CLIP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3V, 8V
Vgs (Max): +10V, -8V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 12.5 V
Description: MOSFET N-CH 25V 60A 8VSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 24A, 8V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 8-VSON-CLIP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3V, 8V
Vgs (Max): +10V, -8V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 12.5 V
auf Bestellung 4087 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.96 EUR |
| 10+ | 2.53 EUR |
| 100+ | 1.71 EUR |
| CSD16327Q3T |
|
Hersteller: Texas Instruments
MOSFETs 25-V N channel NexF ET power MOSFET si A A 595-CSD16327Q3
MOSFETs 25-V N channel NexF ET power MOSFET si A A 595-CSD16327Q3
auf Bestellung 2753 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.97 EUR |
| 10+ | 2.56 EUR |
| 100+ | 1.5 EUR |
| 500+ | 1.3 EUR |
| 1000+ | 1.18 EUR |
| 2500+ | 1.13 EUR |