CSD16327Q3T Texas Instruments
Hersteller: Texas InstrumentsDescription: MOSFET N-CH 25V 60A 8VSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 24A, 8V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 8-VSON-CLIP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3V, 8V
Vgs (Max): +10V, -8V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 12.5 V
auf Bestellung 4250 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 250+ | 1.19 EUR |
| 500+ | 0.93 EUR |
| 750+ | 0.92 EUR |
| 1250+ | 0.89 EUR |
| 1750+ | 0.84 EUR |
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Technische Details CSD16327Q3T Texas Instruments
Description: MOSFET N-CH 25V 60A 8VSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 4mOhm @ 24A, 8V, Power Dissipation (Max): 74W (Tc), Vgs(th) (Max) @ Id: 1.4V @ 250µA, Supplier Device Package: 8-VSON-CLIP (3.3x3.3), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 3V, 8V, Vgs (Max): +10V, -8V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 12.5 V.
Weitere Produktangebote CSD16327Q3T nach Preis ab 0.86 EUR bis 2.39 EUR
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CSD16327Q3T | Hersteller : Texas Instruments |
MOSFETs 25-V N channel NexF ET power MOSFET si A 595-CSD16327Q3 |
auf Bestellung 2975 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD16327Q3T | Hersteller : Texas Instruments |
Description: MOSFET N-CH 25V 60A 8VSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 24A, 8V Power Dissipation (Max): 74W (Tc) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: 8-VSON-CLIP (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 3V, 8V Vgs (Max): +10V, -8V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 12.5 V |
auf Bestellung 4266 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD16327Q3T Produktcode: 153742
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| CSD16327Q3T | Hersteller : TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 60A; Idm: 240A; 74W; VSON-CLIP8 Technology: NexFET™ Type of transistor: N-MOSFET Mounting: SMD Gate-source voltage: -8...10V On-state resistance: 6.5mΩ Power dissipation: 74W Drain-source voltage: 25V Drain current: 60A Pulsed drain current: 240A Kind of package: reel; tape Application: automotive industry Polarisation: unipolar Case: VSON-CLIP8 Kind of channel: enhancement |
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