
CSD16327Q3T Texas Instruments

Description: MOSFET N-CH 25V 60A 8VSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 24A, 8V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 8-VSON-CLIP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3V, 8V
Vgs (Max): +10V, -8V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 12.5 V
auf Bestellung 4980 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
11+ | 1.65 EUR |
13+ | 1.36 EUR |
100+ | 0.89 EUR |
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Technische Details CSD16327Q3T Texas Instruments
Description: MOSFET N-CH 25V 60A 8VSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 4mOhm @ 24A, 8V, Power Dissipation (Max): 74W (Tc), Vgs(th) (Max) @ Id: 1.4V @ 250µA, Supplier Device Package: 8-VSON-CLIP (3.3x3.3), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 3V, 8V, Vgs (Max): +10V, -8V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 12.5 V.
Weitere Produktangebote CSD16327Q3T nach Preis ab 0.87 EUR bis 2.50 EUR
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CSD16327Q3T | Hersteller : Texas Instruments |
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auf Bestellung 3121 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD16327Q3T Produktcode: 153742
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CSD16327Q3T | Hersteller : Texas Instruments |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 24A, 8V Power Dissipation (Max): 74W (Tc) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: 8-VSON-CLIP (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 3V, 8V Vgs (Max): +10V, -8V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 12.5 V |
auf Bestellung 4750 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD16327Q3T | Hersteller : Texas Instruments |
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CSD16327Q3T | Hersteller : Texas Instruments |
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CSD16327Q3T | Hersteller : Texas Instruments |
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Produkt ist nicht verfügbar |
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CSD16327Q3T | Hersteller : Texas Instruments |
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Produkt ist nicht verfügbar |
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CSD16327Q3T | Hersteller : TEXAS INSTRUMENTS |
![]() Description: Transistor: N-MOSFET; unipolar; 25V; 60A; Idm: 240A; 74W; VSON-CLIP8 Case: VSON-CLIP8 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 25V Drain current: 60A On-state resistance: 6.5mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 74W Polarisation: unipolar Technology: NexFET™ Kind of channel: enhancement Gate-source voltage: -8...10V Pulsed drain current: 240A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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CSD16327Q3T | Hersteller : TEXAS INSTRUMENTS |
![]() Description: Transistor: N-MOSFET; unipolar; 25V; 60A; Idm: 240A; 74W; VSON-CLIP8 Case: VSON-CLIP8 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 25V Drain current: 60A On-state resistance: 6.5mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 74W Polarisation: unipolar Technology: NexFET™ Kind of channel: enhancement Gate-source voltage: -8...10V Pulsed drain current: 240A |
Produkt ist nicht verfügbar |