CSD16401Q5T Texas Instruments
Hersteller: Texas Instruments
Description: MOSFET N-CH 25V 100A 8VSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 40A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Supplier Device Package: 8-VSON-CLIP (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +16V, -12V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 12.5 V
| Anzahl | Preis |
|---|---|
| 250+ | 2.78 EUR |
| 500+ | 2.57 EUR |
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Technische Details CSD16401Q5T Texas Instruments
Description: MOSFET N-CH 25V 100A 8VSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Ta), Rds On (Max) @ Id, Vgs: 1.6mOhm @ 40A, 10V, Power Dissipation (Max): 3.1W (Ta), Vgs(th) (Max) @ Id: 1.9V @ 250µA, Supplier Device Package: 8-VSON-CLIP (5x6), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +16V, -12V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 12.5 V.
Weitere Produktangebote CSD16401Q5T nach Preis ab 2.29 EUR bis 6.72 EUR
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CSD16401Q5T | Hersteller : Texas Instruments |
MOSFETs 25-V N channel NexF ET power MOSFET si A A 595-CSD16401Q5 |
auf Bestellung 507 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD16401Q5T | Hersteller : Texas Instruments |
Description: MOSFET N-CH 25V 100A 8VSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 40A, 10V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 1.9V @ 250µA Supplier Device Package: 8-VSON-CLIP (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): +16V, -12V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 12.5 V |
auf Bestellung 740 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD16401Q5T | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 25V 100A 8-Pin VSON-CLIP EP T/R |
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CSD16401Q5T | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 25V 100A 8-Pin VSON-CLIP EP T/R |
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CSD16401Q5T | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 25V 100A 8-Pin VSON-CLIP EP T/R |
Produkt ist nicht verfügbar |
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| CSD16401Q5T | Hersteller : TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 100A; Idm: 240A; 156W Mounting: SMD Technology: NexFET™ Type of transistor: N-MOSFET Gate-source voltage: -12...16V On-state resistance: 2.3mΩ Power dissipation: 156W Drain-source voltage: 25V Drain current: 100A Pulsed drain current: 240A Kind of package: reel; tape Application: automotive industry Polarisation: unipolar Case: VSON-CLIP8 Kind of channel: enhancement |
Produkt ist nicht verfügbar |