CSD16570Q5BT Texas Instruments
auf Bestellung 487 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 84+ | 1.86 EUR |
| 85+ | 1.78 EUR |
| 86+ | 1.71 EUR |
| 100+ | 1.63 EUR |
| 250+ | 1.55 EUR |
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Technische Details CSD16570Q5BT Texas Instruments
Description: MOSFET N-CH 25V 100A 8VSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Ta), Rds On (Max) @ Id, Vgs: 0.59mOhm @ 50A, 10V, Power Dissipation (Max): 3.2W (Ta), 195W (Tc), Vgs(th) (Max) @ Id: 1.9V @ 250µA, Supplier Device Package: 8-VSONP (5x6), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 12 V.
Weitere Produktangebote CSD16570Q5BT nach Preis ab 1.96 EUR bis 4.52 EUR
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CSD16570Q5BT | Hersteller : Texas Instruments |
 Description: MOSFET N-CH 25V 100A 8VSONPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Rds On (Max) @ Id, Vgs: 0.59mOhm @ 50A, 10V Power Dissipation (Max): 3.2W (Ta), 195W (Tc) Vgs(th) (Max) @ Id: 1.9V @ 250µA Supplier Device Package: 8-VSONP (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 12 V |
auf Bestellung 25750 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD16570Q5BT | Hersteller : Texas Instruments |
MOSFET 25V NCH NexFET Pwr MOSFET |
auf Bestellung 13219 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD16570Q5BT | Hersteller : Texas Instruments |
Description: MOSFET N-CH 25V 100A 8VSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Rds On (Max) @ Id, Vgs: 0.59mOhm @ 50A, 10V Power Dissipation (Max): 3.2W (Ta), 195W (Tc) Vgs(th) (Max) @ Id: 1.9V @ 250µA Supplier Device Package: 8-VSONP (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14000 pF @ 12 V |
auf Bestellung 25968 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD16570Q5BT Produktcode: 196756 |
Transistoren > MOSFET N-CH |
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CSD16570Q5BT | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 25V 100A 8-Pin VSON-CLIP EP T/R |
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CSD16570Q5BT | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 25V 100A 8-Pin VSON-CLIP EP T/R |
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CSD16570Q5BT | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 25V 100A 8-Pin VSON-CLIP EP T/R |
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| CSD16570Q5BT | Hersteller : TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 195W; VSON-CLIP8; 5x6mm Type of transistor: N-MOSFET Technology: NexFET™ Polarisation: unipolar Drain-source voltage: 25V Drain current: 100A Power dissipation: 195W Case: VSON-CLIP8 Gate-source voltage: ±20V On-state resistance: 0.68mΩ Mounting: SMD Gate charge: 95nC Kind of package: reel; tape Kind of channel: enhanced Dimensions: 5x6mm Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| CSD16570Q5BT | Hersteller : TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 195W; VSON-CLIP8; 5x6mm Type of transistor: N-MOSFET Technology: NexFET™ Polarisation: unipolar Drain-source voltage: 25V Drain current: 100A Power dissipation: 195W Case: VSON-CLIP8 Gate-source voltage: ±20V On-state resistance: 0.68mΩ Mounting: SMD Gate charge: 95nC Kind of package: reel; tape Kind of channel: enhanced Dimensions: 5x6mm |
Produkt ist nicht verfügbar |