Produkte > TEXAS INSTRUMENTS > CSD17313Q2Q1
CSD17313Q2Q1

CSD17313Q2Q1 Texas Instruments

suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd17313q2q1 Hersteller: Texas Instruments
MOSFET Auto 30-V N-Ch NexFET Pwr MOSFET
auf Bestellung 2969 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1.32 EUR
10+1.17 EUR
100+0.90 EUR
500+0.71 EUR
1000+0.57 EUR
3000+0.51 EUR
9000+0.46 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details CSD17313Q2Q1 Texas Instruments

Description: MOSFET N-CH 30V 5A 6WSON, Packaging: Tape & Reel (TR), Package / Case: 6-WDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Tc), Rds On (Max) @ Id, Vgs: 30mOhm @ 4A, 8V, Power Dissipation (Max): 2.3W (Ta), Vgs(th) (Max) @ Id: 1.8V @ 250µA, Supplier Device Package: 6-WSON (2x2), Drive Voltage (Max Rds On, Min Rds On): 3V, 8V, Vgs (Max): +10V, -8V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 15 V.

Weitere Produktangebote CSD17313Q2Q1 nach Preis ab 0.48 EUR bis 1.43 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
CSD17313Q2Q1 CSD17313Q2Q1 Hersteller : Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd17313q2q1 Description: MOSFET N-CH 30V 5A 6WSON
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4A, 8V
Power Dissipation (Max): 2.3W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: 6-WSON (2x2)
Drive Voltage (Max Rds On, Min Rds On): 3V, 8V
Vgs (Max): +10V, -8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 15 V
auf Bestellung 2788 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.43 EUR
19+0.97 EUR
100+0.67 EUR
500+0.53 EUR
1000+0.48 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
CSD17313Q2Q1 CSD17313Q2Q1 Hersteller : Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd17313q2q1 Description: MOSFET N-CH 30V 5A 6WSON
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4A, 8V
Power Dissipation (Max): 2.3W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: 6-WSON (2x2)
Drive Voltage (Max Rds On, Min Rds On): 3V, 8V
Vgs (Max): +10V, -8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH