CSD17313Q2Q1 Texas Instruments
| Anzahl | Preis |
|---|---|
| 2348+ | 0.23 EUR |
| 10000+ | 0.21 EUR |
| 100000+ | 0.17 EUR |
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Technische Details CSD17313Q2Q1 Texas Instruments
Description: MOSFET N-CH 30V 5A 6WSON, Packaging: Tape & Reel (TR), Package / Case: 6-WDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Tc), Rds On (Max) @ Id, Vgs: 30mOhm @ 4A, 8V, Power Dissipation (Max): 2.3W (Ta), Vgs(th) (Max) @ Id: 1.8V @ 250µA, Supplier Device Package: 6-WSON (2x2), Drive Voltage (Max Rds On, Min Rds On): 3V, 8V, Vgs (Max): +10V, -8V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 15 V.
Weitere Produktangebote CSD17313Q2Q1 nach Preis ab 0.39 EUR bis 1.85 EUR
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CSD17313Q2Q1 | Texas Instruments |
 MOSFETs Auto 30-V N-Ch NexFET Pwr MOSFET |
auf Bestellung 2159 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD17313Q2Q1 | Texas Instruments |
Description: MOSFET N-CH 30V 5A 6WSON Packaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 4A, 8V Power Dissipation (Max): 2.3W (Ta) Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: 6-WSON (2x2) Drive Voltage (Max Rds On, Min Rds On): 3V, 8V Vgs (Max): +10V, -8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 15 V |
auf Bestellung 2032 Stücke: Lieferzeit 10-14 Tag (e) |
|
| CSD17313Q2Q1 |
|
Hersteller: Texas Instruments
MOSFETs Auto 30-V N-Ch NexFET Pwr MOSFET
MOSFETs Auto 30-V N-Ch NexFET Pwr MOSFET
auf Bestellung 2159 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.74 EUR |
| 10+ | 1.09 EUR |
| 100+ | 0.72 EUR |
| 500+ | 0.56 EUR |
| 1000+ | 0.5 EUR |
| 3000+ | 0.42 EUR |
| 6000+ | 0.39 EUR |
| CSD17313Q2Q1 |
|
Hersteller: Texas Instruments
Description: MOSFET N-CH 30V 5A 6WSON
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4A, 8V
Power Dissipation (Max): 2.3W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: 6-WSON (2x2)
Drive Voltage (Max Rds On, Min Rds On): 3V, 8V
Vgs (Max): +10V, -8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 15 V
Description: MOSFET N-CH 30V 5A 6WSON
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 4A, 8V
Power Dissipation (Max): 2.3W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: 6-WSON (2x2)
Drive Voltage (Max Rds On, Min Rds On): 3V, 8V
Vgs (Max): +10V, -8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 15 V
auf Bestellung 2032 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 10+ | 1.85 EUR |
| 16+ | 1.16 EUR |
| 100+ | 0.76 EUR |
| 500+ | 0.59 EUR |
| 1000+ | 0.54 EUR |