CSD17313Q2Q1T Texas Instruments
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.57 EUR |
| 10+ | 2.29 EUR |
| 100+ | 1.78 EUR |
| 500+ | 1.48 EUR |
| 1000+ | 1.17 EUR |
| 2500+ | 1.09 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details CSD17313Q2Q1T Texas Instruments
Description: MOSFET N-CH 30V 5A 6WSON, Packaging: Tape & Reel (TR), Package / Case: 6-WDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Ta), Rds On (Max) @ Id, Vgs: 30mOhm @ 4A, 8V, Power Dissipation (Max): 2.4W (Ta), 17W (Tc), Vgs(th) (Max) @ Id: 1.8V @ 250µA, Supplier Device Package: 6-WSON (2x2), Drive Voltage (Max Rds On, Min Rds On): 3V, 8V, Vgs (Max): +10V, -8V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 15 V.
Weitere Produktangebote CSD17313Q2Q1T
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| CSD17313Q2Q1T | Hersteller : TEXAS INSTRUMENTS |
 CSD17313Q2Q1T SMD N channel transistors |
Produkt ist nicht verfügbar |
||
 |
CSD17313Q2Q1T | Hersteller : Texas Instruments |
Description: MOSFET N-CH 30V 5A 6WSON Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 4A, 8V Power Dissipation (Max): 2.4W (Ta), 17W (Tc) Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: 6-WSON (2x2) Drive Voltage (Max Rds On, Min Rds On): 3V, 8V Vgs (Max): +10V, -8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 15 V |
Produkt ist nicht verfügbar |