CSD17318Q2T Texas Instruments
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 268+ | 0.54 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details CSD17318Q2T Texas Instruments
Description: MOSFET N-CHANNEL 30V 25A 6WSON, Packaging: Tape & Reel (TR), Package / Case: 6-WDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), Rds On (Max) @ Id, Vgs: 15.1mOhm @ 8A, 8V, Power Dissipation (Max): 16W (Tc), Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: 6-WSON (2x2), Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 879 pF @ 15 V.
Weitere Produktangebote CSD17318Q2T nach Preis ab 0.63 EUR bis 2.76 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
CSD17318Q2T | Hersteller : Texas Instruments |
 MOSFETs 30-V N channel NexF ET power MOSFET si A 595-CSD17318Q2 |
auf Bestellung 3470 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
 |
CSD17318Q2T | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 30V 21.5A 6-Pin WSON EP T/R |
auf Bestellung 250 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
 |
CSD17318Q2T | Hersteller : Texas Instruments |
Description: MOSFET N-CHANNEL 30V 25A 6WSON Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 15.1mOhm @ 8A, 8V Power Dissipation (Max): 16W (Tc) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: 6-WSON (2x2) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 879 pF @ 15 V |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
CSD17318Q2T | Hersteller : Texas Instruments |
Description: MOSFET N-CHANNEL 30V 25A 6WSON Packaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 15.1mOhm @ 8A, 8V Power Dissipation (Max): 16W (Tc) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: 6-WSON (2x2) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 879 pF @ 15 V |
auf Bestellung 2670 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
CSD17318Q2T | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 30V 21.5A 6-Pin WSON EP T/R |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||||
|
|
CSD17318Q2T | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 30V 21.5A 6-Pin WSON EP T/R |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||||
 |
CSD17318Q2T | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 30V 21.5A 6-Pin WSON EP T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||||
|
|
CSD17318Q2T | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 30V 21.5A 6-Pin WSON EP T/R |
Produkt ist nicht verfügbar |
|||||||||||||||
|
|
CSD17318Q2T | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 30V 21.5A 6-Pin WSON EP T/R |
Produkt ist nicht verfügbar |
|||||||||||||||
| CSD17318Q2T | Hersteller : TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 21.5A; Idm: 68A; 16W; WSON6 Type of transistor: N-MOSFET Technology: NexFET™ Polarisation: unipolar Drain-source voltage: 30V Drain current: 21.5A Pulsed drain current: 68A Power dissipation: 16W Case: WSON6 Gate-source voltage: ±10V On-state resistance: 30mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
Produkt ist nicht verfügbar |