CSD17318Q2T Texas Instruments
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 250+ | 0.70 EUR |
| 500+ | 0.61 EUR |
| 1000+ | 0.55 EUR |
| 1250+ | 0.52 EUR |
| 2500+ | 0.49 EUR |
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Produktbewertung abgeben
Technische Details CSD17318Q2T Texas Instruments
Description: MOSFET N-CHANNEL 30V 25A 6WSON, Packaging: Tape & Reel (TR), Package / Case: 6-WDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), Rds On (Max) @ Id, Vgs: 15.1mOhm @ 8A, 8V, Power Dissipation (Max): 16W (Tc), Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: 6-WSON (2x2), Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 879 pF @ 15 V.
Weitere Produktangebote CSD17318Q2T nach Preis ab 0.68 EUR bis 2.76 EUR
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CSD17318Q2T | Hersteller : Texas Instruments |
 Trans MOSFET N-CH Si 30V 21.5A 6-Pin WSON EP T/R |
auf Bestellung 250 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD17318Q2T | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 30V 21.5A 6-Pin WSON EP T/R |
auf Bestellung 250 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD17318Q2T | Hersteller : Texas Instruments |
Description: MOSFET N-CHANNEL 30V 25A 6WSON Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 15.1mOhm @ 8A, 8V Power Dissipation (Max): 16W (Tc) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: 6-WSON (2x2) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 879 pF @ 15 V |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD17318Q2T | Hersteller : Texas Instruments |
MOSFETs 30-V, N channel NexFET™ power MOSFET, single SON 2 mm x 2 mm, 16.9 mOhm 6-WSON -55 to 150 |
auf Bestellung 4576 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD17318Q2T | Hersteller : Texas Instruments |
Description: MOSFET N-CHANNEL 30V 25A 6WSON Packaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 15.1mOhm @ 8A, 8V Power Dissipation (Max): 16W (Tc) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: 6-WSON (2x2) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 879 pF @ 15 V |
auf Bestellung 2670 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD17318Q2T | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 30V 21.5A 6-Pin WSON EP T/R |
auf Bestellung 40 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD17318Q2T | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 30V 21.5A 6-Pin WSON EP T/R |
auf Bestellung 40 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD17318Q2T | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 30V 21.5A 6-Pin WSON EP T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD17318Q2T | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 30V 21.5A 6-Pin WSON EP T/R |
Produkt ist nicht verfügbar |
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| CSD17318Q2T | Hersteller : TEXAS INSTRUMENTS |
CSD17318Q2T SMD N channel transistors |
Produkt ist nicht verfügbar |