Technische Details CSD17318Q2T Texas Instruments
Description: MOSFET N-CHANNEL 30V 25A 6WSON, Packaging: Tape & Reel (TR), Package / Case: 6-WDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), Rds On (Max) @ Id, Vgs: 15.1mOhm @ 8A, 8V, Power Dissipation (Max): 16W (Tc), Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: 6-WSON (2x2), Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 879 pF @ 15 V.
Weitere Produktangebote CSD17318Q2T nach Preis ab 0.83 EUR bis 3.28 EUR
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CSD17318Q2T | Texas Instruments |
 Trans MOSFET N-CH Si 30V 21.5A 6-Pin WSON EP T/R |
auf Bestellung 250 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD17318Q2T | Texas Instruments |
Description: MOSFET N-CHANNEL 30V 25A 6WSON Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 15.1mOhm @ 8A, 8V Power Dissipation (Max): 16W (Tc) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: 6-WSON (2x2) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 879 pF @ 15 V |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD17318Q2T | Texas Instruments |
Trans MOSFET N-CH Si 30V 21.5A 6-Pin WSON EP T/R |
auf Bestellung 349 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD17318Q2T | Texas Instruments |
Trans MOSFET N-CH Si 30V 21.5A 6-Pin WSON EP T/R |
auf Bestellung 349 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD17318Q2T | Texas Instruments |
MOSFETs 30-V N channel NexF ET power MOSFET si A A 595-CSD17318Q2 |
auf Bestellung 2902 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD17318Q2T | Texas Instruments |
Description: MOSFET N-CHANNEL 30V 25A 6WSON Packaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 15.1mOhm @ 8A, 8V Power Dissipation (Max): 16W (Tc) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: 6-WSON (2x2) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 879 pF @ 15 V |
auf Bestellung 2670 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD17318Q2T | Texas Instruments |
Trans MOSFET N-CH Si 30V 21.5A 6-Pin WSON EP T/R |
auf Bestellung 19 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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CSD17318Q2T | Texas Instruments |
Trans MOSFET N-CH Si 30V 21.5A 6-Pin WSON EP T/R |
auf Bestellung 19 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 14 Stücke Im Einkaufswagen Stück im Wert von UAH |
| CSD17318Q2T |
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Hersteller: Texas Instruments
Trans MOSFET N-CH Si 30V 21.5A 6-Pin WSON EP T/R
Trans MOSFET N-CH Si 30V 21.5A 6-Pin WSON EP T/R
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 250+ | 0.98 EUR |
| CSD17318Q2T |
|
Hersteller: Texas Instruments
Description: MOSFET N-CHANNEL 30V 25A 6WSON
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 15.1mOhm @ 8A, 8V
Power Dissipation (Max): 16W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 6-WSON (2x2)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 879 pF @ 15 V
Description: MOSFET N-CHANNEL 30V 25A 6WSON
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 15.1mOhm @ 8A, 8V
Power Dissipation (Max): 16W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 6-WSON (2x2)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 879 pF @ 15 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 250+ | 1.08 EUR |
| 500+ | 1 EUR |
| 750+ | 0.95 EUR |
| 1250+ | 0.89 EUR |
| 1750+ | 0.86 EUR |
| 2500+ | 0.83 EUR |
| CSD17318Q2T |
|
Hersteller: Texas Instruments
Trans MOSFET N-CH Si 30V 21.5A 6-Pin WSON EP T/R
Trans MOSFET N-CH Si 30V 21.5A 6-Pin WSON EP T/R
auf Bestellung 349 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 74+ | 2.36 EUR |
| 107+ | 1.61 EUR |
| 174+ | 0.96 EUR |
| 250+ | 0.94 EUR |
| CSD17318Q2T |
|
Hersteller: Texas Instruments
Trans MOSFET N-CH Si 30V 21.5A 6-Pin WSON EP T/R
Trans MOSFET N-CH Si 30V 21.5A 6-Pin WSON EP T/R
auf Bestellung 349 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 74+ | 2.36 EUR |
| 107+ | 1.57 EUR |
| 174+ | 0.93 EUR |
| 250+ | 0.89 EUR |
| CSD17318Q2T |
|
Hersteller: Texas Instruments
MOSFETs 30-V N channel NexF ET power MOSFET si A A 595-CSD17318Q2
MOSFETs 30-V N channel NexF ET power MOSFET si A A 595-CSD17318Q2
auf Bestellung 2902 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 3.19 EUR |
| 10+ | 2.01 EUR |
| 100+ | 1.17 EUR |
| 500+ | 1.02 EUR |
| 1000+ | 0.92 EUR |
| 2500+ | 0.88 EUR |
| CSD17318Q2T |
|
Hersteller: Texas Instruments
Description: MOSFET N-CHANNEL 30V 25A 6WSON
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 15.1mOhm @ 8A, 8V
Power Dissipation (Max): 16W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 6-WSON (2x2)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 879 pF @ 15 V
Description: MOSFET N-CHANNEL 30V 25A 6WSON
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 15.1mOhm @ 8A, 8V
Power Dissipation (Max): 16W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 6-WSON (2x2)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 8V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 879 pF @ 15 V
auf Bestellung 2670 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.28 EUR |
| 11+ | 2.08 EUR |
| 100+ | 1.39 EUR |
| CSD17318Q2T |
|
Hersteller: Texas Instruments
Trans MOSFET N-CH Si 30V 21.5A 6-Pin WSON EP T/R
Trans MOSFET N-CH Si 30V 21.5A 6-Pin WSON EP T/R
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)
| CSD17318Q2T |
|
Hersteller: Texas Instruments
Trans MOSFET N-CH Si 30V 21.5A 6-Pin WSON EP T/R
Trans MOSFET N-CH Si 30V 21.5A 6-Pin WSON EP T/R
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)