CSD17381F4T Texas Instruments
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 251+ | 0.59 EUR |
| 500+ | 0.52 EUR |
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Technische Details CSD17381F4T Texas Instruments
Description: MOSFET N-CH 30V 3.1A 3PICOSTAR, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta), Rds On (Max) @ Id, Vgs: 109mOhm @ 500mA, 8V, Power Dissipation (Max): 500mW (Ta), Vgs(th) (Max) @ Id: 1.1V @ 250µA, Supplier Device Package: 3-PICOSTAR, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): 12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 1.35 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 15 V.
Weitere Produktangebote CSD17381F4T nach Preis ab 0.53 EUR bis 1.65 EUR
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CSD17381F4T | Hersteller : Texas Instruments |
 Description: MOSFET N-CH 30V 3.1A 3PICOSTARPackaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta) Rds On (Max) @ Id, Vgs: 109mOhm @ 500mA, 8V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: 3-PICOSTAR Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): 12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 1.35 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 15 V |
auf Bestellung 33000 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD17381F4T | Hersteller : Texas Instruments |
MOSFETs 30V,N-Ch FemtoFET MOSFET |
auf Bestellung 6017 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD17381F4T | Hersteller : Texas Instruments |
Description: MOSFET N-CH 30V 3.1A 3PICOSTAR Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta) Rds On (Max) @ Id, Vgs: 109mOhm @ 500mA, 8V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: 3-PICOSTAR Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): 12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 1.35 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 15 V |
auf Bestellung 33269 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD17381F4T | Hersteller : Texas Instruments |
Trans MOSFET N-CH 30V 3.1A 3-Pin PicoStar T/R |
auf Bestellung 120 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD17381F4T | Hersteller : Texas Instruments |
Trans MOSFET N-CH 30V 3.1A 3-Pin PicoStar T/R |
auf Bestellung 120 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD17381F4T | Hersteller : Texas Instruments |
Trans MOSFET N-CH 30V 3.1A 3-Pin PicoStar T/R |
auf Bestellung 120 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD17381F4T | Hersteller : Texas Instruments |
Trans MOSFET N-CH 30V 3.1A 3-Pin PicoStar T/R |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD17381F4T | Hersteller : Texas Instruments |
Trans MOSFET N-CH 30V 3.1A 3-Pin PicoStar T/R |
Produkt ist nicht verfügbar |
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CSD17381F4T | Hersteller : Texas Instruments |
Trans MOSFET N-CH 30V 3.1A 3-Pin PicoStar T/R |
Produkt ist nicht verfügbar |
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| CSD17381F4T | Hersteller : TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 3.1A; Idm: 12A; 500mW Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 3.1A Pulsed drain current: 12A Power dissipation: 0.5W Case: PICOSTAR3 Gate-source voltage: ±12V On-state resistance: 0.25Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Technology: NexFET™ Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| CSD17381F4T | Hersteller : TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 3.1A; Idm: 12A; 500mW Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 3.1A Pulsed drain current: 12A Power dissipation: 0.5W Case: PICOSTAR3 Gate-source voltage: ±12V On-state resistance: 0.25Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Technology: NexFET™ |
Produkt ist nicht verfügbar |