CSD17575Q3T Texas Instruments
Hersteller: Texas InstrumentsDescription: MOSFET N-CH 30V 60A 8VSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 25A, 10V
Power Dissipation (Max): 2.8W (Ta), 108W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: 8-VSON-CLIP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4420 pF @ 15 V
auf Bestellung 12250 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 250+ | 1.32 EUR |
| 500+ | 1.12 EUR |
| 750+ | 1.03 EUR |
| 1250+ | 0.87 EUR |
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Technische Details CSD17575Q3T Texas Instruments
Description: MOSFET N-CH 30V 60A 8VSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Ta), Rds On (Max) @ Id, Vgs: 2.3mOhm @ 25A, 10V, Power Dissipation (Max): 2.8W (Ta), 108W (Tc), Vgs(th) (Max) @ Id: 1.8V @ 250µA, Supplier Device Package: 8-VSON-CLIP (3.3x3.3), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 4420 pF @ 15 V.
Weitere Produktangebote CSD17575Q3T nach Preis ab 0.87 EUR bis 3.01 EUR
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CSD17575Q3T | Hersteller : Texas Instruments |
MOSFETs 30V NCh NexFET Pwr M OSFET A 595-CSD17575Q3 |
auf Bestellung 4538 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD17575Q3T | Hersteller : Texas Instruments |
Description: MOSFET N-CH 30V 60A 8VSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Ta) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 25A, 10V Power Dissipation (Max): 2.8W (Ta), 108W (Tc) Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: 8-VSON-CLIP (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4420 pF @ 15 V |
auf Bestellung 12852 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD17575Q3T | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 30V 60A 8-Pin VSON-CLIP EP T/R |
auf Bestellung 17 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD17575Q3T | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 30V 60A 8-Pin VSON-CLIP EP T/R |
auf Bestellung 17 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD17575Q3T | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 30V 60A 8-Pin VSON-CLIP EP T/R |
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CSD17575Q3T | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 30V 60A 8-Pin VSON-CLIP EP T/R |
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CSD17575Q3T | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 30V 60A 8-Pin VSON-CLIP EP T/R |
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CSD17575Q3T | Hersteller : TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 60A; 108W; VSON-CLIP8 Kind of channel: enhancement Case: VSON-CLIP8 Technology: NexFET™ Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 23nC On-state resistance: 2.6mΩ Dimensions: 3.3x3.3mm Gate-source voltage: ±20V Drain-source voltage: 30V Drain current: 60A Power dissipation: 108W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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CSD17575Q3T | Hersteller : TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 60A; 108W; VSON-CLIP8 Kind of channel: enhancement Case: VSON-CLIP8 Technology: NexFET™ Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 23nC On-state resistance: 2.6mΩ Dimensions: 3.3x3.3mm Gate-source voltage: ±20V Drain-source voltage: 30V Drain current: 60A Power dissipation: 108W |
Produkt ist nicht verfügbar |