CSD17575Q3T Texas Instruments
Hersteller: Texas Instruments
Description: MOSFET N-CH 30V 60A 8VSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 25A, 10V
Power Dissipation (Max): 2.8W (Ta), 108W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: 8-VSON-CLIP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4420 pF @ 15 V
| Anzahl | Privatkunde |
|---|---|
| 250+ | 1.45 EUR |
| 500+ | 1.32 EUR |
| 750+ | 1.25 EUR |
| 1250+ | 1.18 EUR |
| 1750+ | 1.13 EUR |
| 2500+ | 1.08 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details CSD17575Q3T Texas Instruments
Description: MOSFET N-CH 30V 60A 8VSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Ta), Rds On (Max) @ Id, Vgs: 2.3mOhm @ 25A, 10V, Power Dissipation (Max): 2.8W (Ta), 108W (Tc), Vgs(th) (Max) @ Id: 1.8V @ 250µA, Supplier Device Package: 8-VSON-CLIP (3.3x3.3), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 4420 pF @ 15 V.
Weitere Produktangebote CSD17575Q3T nach Preis ab 1.04 EUR bis 3.83 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
CSD17575Q3T | TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 60A; 108W; VSON-CLIP8 Type of transistor: N-MOSFET Technology: NexFET™ Polarisation: unipolar Drain-source voltage: 30V Drain current: 60A Power dissipation: 108W Case: VSON-CLIP8 Gate-source voltage: ±20V On-state resistance: 2.6mΩ Mounting: SMD Gate charge: 23nC Kind of package: reel; tape Kind of channel: enhancement Dimensions: 3.3x3.3mm |
auf Bestellung 118 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
 |
CSD17575Q3T | Texas Instruments |
MOSFETs 30V NCh NexFET Pwr M OSFET A 595-CSD17575Q3 |
auf Bestellung 4538 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
|
CSD17575Q3T | Texas Instruments |
Description: MOSFET N-CH 30V 60A 8VSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Ta) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 25A, 10V Power Dissipation (Max): 2.8W (Ta), 108W (Tc) Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: 8-VSON-CLIP (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4420 pF @ 15 V |
auf Bestellung 2846 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
 |
CSD17575Q3T | Texas Instruments |
Trans MOSFET N-CH Si 30V 60A 8-Pin VSON-CLIP EP T/R |
auf Bestellung 17 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
|
|
CSD17575Q3T | Texas Instruments |
Trans MOSFET N-CH Si 30V 60A 8-Pin VSON-CLIP EP T/R |
auf Bestellung 17 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 12 Stücke Im Einkaufswagen Stück im Wert von UAH |
| CSD17575Q3T |
|
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 60A; 108W; VSON-CLIP8
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 60A
Power dissipation: 108W
Case: VSON-CLIP8
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Dimensions: 3.3x3.3mm
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 60A; 108W; VSON-CLIP8
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 60A
Power dissipation: 108W
Case: VSON-CLIP8
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Dimensions: 3.3x3.3mm
auf Bestellung 118 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 44+ | 1.98 EUR |
| 56+ | 1.54 EUR |
| 64+ | 1.34 EUR |
| 100+ | 1.21 EUR |
| CSD17575Q3T |
|
Hersteller: Texas Instruments
MOSFETs 30V NCh NexFET Pwr M OSFET A 595-CSD17575Q3
MOSFETs 30V NCh NexFET Pwr M OSFET A 595-CSD17575Q3
auf Bestellung 4538 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.32 EUR |
| 10+ | 1.8 EUR |
| 25+ | 1.78 EUR |
| 100+ | 1.11 EUR |
| 250+ | 1.05 EUR |
| 500+ | 1.04 EUR |
| CSD17575Q3T |
|
Hersteller: Texas Instruments
Description: MOSFET N-CH 30V 60A 8VSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 25A, 10V
Power Dissipation (Max): 2.8W (Ta), 108W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: 8-VSON-CLIP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4420 pF @ 15 V
Description: MOSFET N-CH 30V 60A 8VSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 25A, 10V
Power Dissipation (Max): 2.8W (Ta), 108W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: 8-VSON-CLIP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4420 pF @ 15 V
auf Bestellung 2846 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.83 EUR |
| 10+ | 2.45 EUR |
| 100+ | 1.65 EUR |
| CSD17575Q3T |
|
Hersteller: Texas Instruments
Trans MOSFET N-CH Si 30V 60A 8-Pin VSON-CLIP EP T/R
Trans MOSFET N-CH Si 30V 60A 8-Pin VSON-CLIP EP T/R
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)
| CSD17575Q3T |
|
Hersteller: Texas Instruments
Trans MOSFET N-CH Si 30V 60A 8-Pin VSON-CLIP EP T/R
Trans MOSFET N-CH Si 30V 60A 8-Pin VSON-CLIP EP T/R
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)