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CSD17575Q3T

CSD17575Q3T Texas Instruments

suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd17575q3
Hersteller: Texas Instruments
Description: MOSFET N-CH 30V 60A 8VSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 25A, 10V
Power Dissipation (Max): 2.8W (Ta), 108W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: 8-VSON-CLIP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4420 pF @ 15 V
auf Bestellung 2750 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
250+1.22 EUR
500+1.11 EUR
750+1.05 EUR
1250+0.99 EUR
1750+0.95 EUR
2500+0.91 EUR
Mindestbestellmenge: 250 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details CSD17575Q3T Texas Instruments

Description: MOSFET N-CH 30V 60A 8VSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Ta), Rds On (Max) @ Id, Vgs: 2.3mOhm @ 25A, 10V, Power Dissipation (Max): 2.8W (Ta), 108W (Tc), Vgs(th) (Max) @ Id: 1.8V @ 250µA, Supplier Device Package: 8-VSON-CLIP (3.3x3.3), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 4420 pF @ 15 V.

Weitere Produktangebote CSD17575Q3T nach Preis ab 0.87 EUR bis 3.22 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
CSD17575Q3T CSD17575Q3T TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd17575q3 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 60A; 108W; VSON-CLIP8
Kind of channel: enhancement
Case: VSON-CLIP8
Technology: NexFET™
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 23nC
On-state resistance: 2.6mΩ
Dimensions: 3.3x3.3mm
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 60A
Power dissipation: 108W
auf Bestellung 124 Stücke:
Lieferzeit 14-21 Tag (e)
44+1.66 EUR
56+1.29 EUR
64+1.13 EUR
100+1.02 EUR
Mindestbestellmenge: 44 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CSD17575Q3T CSD17575Q3T Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd17575q3 MOSFETs 30V NCh NexFET Pwr M OSFET A 595-CSD17575Q3
auf Bestellung 4538 Stücke:
Lieferzeit 10-14 Tag (e)
2+1.95 EUR
10+1.51 EUR
25+1.5 EUR
100+0.93 EUR
250+0.88 EUR
500+0.87 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CSD17575Q3T CSD17575Q3T Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd17575q3 Description: MOSFET N-CH 30V 60A 8VSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 25A, 10V
Power Dissipation (Max): 2.8W (Ta), 108W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: 8-VSON-CLIP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4420 pF @ 15 V
auf Bestellung 2846 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.22 EUR
10+2.06 EUR
100+1.39 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CSD17575Q3T suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd17575q3
CSD17575Q3T
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 60A; 108W; VSON-CLIP8
Kind of channel: enhancement
Case: VSON-CLIP8
Technology: NexFET™
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 23nC
On-state resistance: 2.6mΩ
Dimensions: 3.3x3.3mm
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 60A
Power dissipation: 108W
auf Bestellung 124 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
44+1.66 EUR
56+1.29 EUR
64+1.13 EUR
100+1.02 EUR
Mindestbestellmenge: 44 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CSD17575Q3T suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd17575q3
CSD17575Q3T
Hersteller: Texas Instruments
MOSFETs 30V NCh NexFET Pwr M OSFET A 595-CSD17575Q3
auf Bestellung 4538 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+1.95 EUR
10+1.51 EUR
25+1.5 EUR
100+0.93 EUR
250+0.88 EUR
500+0.87 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CSD17575Q3T suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd17575q3
CSD17575Q3T
Hersteller: Texas Instruments
Description: MOSFET N-CH 30V 60A 8VSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 25A, 10V
Power Dissipation (Max): 2.8W (Ta), 108W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: 8-VSON-CLIP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4420 pF @ 15 V
auf Bestellung 2846 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
6+3.22 EUR
10+2.06 EUR
100+1.39 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH