CSD18504KCS Texas Instruments
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 1000+ | 0.88 EUR |
| 2000+ | 0.84 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details CSD18504KCS Texas Instruments
Description: MOSFET N-CH 40V 53A/100A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 10V, Power Dissipation (Max): 115W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 20 V.
Weitere Produktangebote CSD18504KCS nach Preis ab 0.84 EUR bis 3.59 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
CSD18504KCS | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 40V 100A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
|
CSD18504KCS | Hersteller : TEXAS INSTRUMENTS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 100A; 115W; TO220-3 Type of transistor: N-MOSFET Technology: NexFET™ Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 115W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 5.5mΩ Mounting: THT Gate charge: 19nC Kind of package: tube Kind of channel: enhancement Heatsink thickness: 1.14...1.4mm Anzahl je Verpackung: 1 Stücke |
auf Bestellung 356 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||||
|
CSD18504KCS | Hersteller : TEXAS INSTRUMENTS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 100A; 115W; TO220-3 Type of transistor: N-MOSFET Technology: NexFET™ Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 115W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 5.5mΩ Mounting: THT Gate charge: 19nC Kind of package: tube Kind of channel: enhancement Heatsink thickness: 1.14...1.4mm |
auf Bestellung 356 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
|
CSD18504KCS | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 40V 100A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 6660 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
|
|
CSD18504KCS | Hersteller : Texas Instruments |
Description: MOSFET N-CH 40V 53A/100A TO220-3Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 10V Power Dissipation (Max): 115W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 20 V |
auf Bestellung 6810 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
CSD18504KCS | Hersteller : Texas Instruments |
MOSFET 40V N-Ch NexFET Pwr MOSFET |
auf Bestellung 586 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
CSD18504KCS | Hersteller : Texas Instruments |
Description: MOSFET N-CH 40V 53A/100A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 10V Power Dissipation (Max): 115W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 20 V |
auf Bestellung 1001 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
CSD18504KCS | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 40V 100A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 600 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||||||
|
CSD18504KCS | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 40V 100A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
|||||||||||||||||
|
CSD18504KCS | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 40V 100A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |


