Technische Details CSD18504KCS Texas Instruments
Description: TEXAS INSTRUMENTS - CSD18504KCS - Leistungs-MOSFET, n-Kanal, 40 V, 100 A, 0.0055 ohm, TO-220, Durchsteckmontage, Transistormontage: Durchsteckmontage, Drain-Source-Spannung Vds: 40, Dauer-Drainstrom Id: 100, Qualifikation: -, MSL: -, Verlustleistung Pd: 93, Gate-Source-Schwellenspannung, max.: 1.9, Verlustleistung: 93, Bauform - Transistor: TO-220, Qualifizierungsstandard der Automobilindustrie: -, Anzahl der Pins: 3, Produktpalette: -, Wandlerpolarität: n-Kanal, Kanaltyp: n-Kanal, Betriebswiderstand, Rds(on): 0.0055, Rds(on)-Prüfspannung: 10, Betriebstemperatur, max.: 150, Drain-Source-Durchgangswiderstand: 0.0055, SVHC: No SVHC (17-Jan-2022).
Weitere Produktangebote CSD18504KCS nach Preis ab 1.01 EUR bis 4.61 EUR
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CSD18504KCS | Texas Instruments |
 Trans MOSFET N-CH Si 40V 100A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD18504KCS | TEXAS INSTRUMENTS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 115W; TO220-3 Kind of package: tube Case: TO220-3 On-state resistance: 5.5mΩ Mounting: THT Power dissipation: 115W Gate charge: 19nC Polarisation: unipolar Technology: NexFET™ Drain current: 100A Kind of channel: enhancement Drain-source voltage: 40V Heatsink thickness: 1.14...1.4mm Type of transistor: N-MOSFET Gate-source voltage: ±20V |
auf Bestellung 305 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD18504KCS | Texas Instruments |
Trans MOSFET N-CH Si 40V 100A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 6660 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD18504KCS | Texas Instruments |
Description: MOSFET N-CH 40V 53A/100A TO220-3 Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 10V Power Dissipation (Max): 115W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 20 V |
auf Bestellung 6810 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD18504KCS | Texas Instruments |
MOSFETs 40V N-Ch NexFET Pwr MOSFET |
auf Bestellung 632 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD18504KCS | Texas Instruments |
Description: MOSFET N-CH 40V 53A/100A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 10V Power Dissipation (Max): 115W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 20 V |
auf Bestellung 73 Stücke: Lieferzeit 10-14 Tag (e) |
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Hersteller: Texas Instruments
Trans MOSFET N-CH Si 40V 100A 3-Pin(3+Tab) TO-220 Tube
Trans MOSFET N-CH Si 40V 100A 3-Pin(3+Tab) TO-220 Tube
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 1.06 EUR |
| 2000+ | 1.01 EUR |
| CSD18504KCS |
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Hersteller: TEXAS INSTRUMENTS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 115W; TO220-3
Kind of package: tube
Case: TO220-3
On-state resistance: 5.5mΩ
Mounting: THT
Power dissipation: 115W
Gate charge: 19nC
Polarisation: unipolar
Technology: NexFET™
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 40V
Heatsink thickness: 1.14...1.4mm
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 115W; TO220-3
Kind of package: tube
Case: TO220-3
On-state resistance: 5.5mΩ
Mounting: THT
Power dissipation: 115W
Gate charge: 19nC
Polarisation: unipolar
Technology: NexFET™
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 40V
Heatsink thickness: 1.14...1.4mm
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
auf Bestellung 305 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 66+ | 1.3 EUR |
| 67+ | 1.27 EUR |
| CSD18504KCS |
|
Hersteller: Texas Instruments
Trans MOSFET N-CH Si 40V 100A 3-Pin(3+Tab) TO-220 Tube
Trans MOSFET N-CH Si 40V 100A 3-Pin(3+Tab) TO-220 Tube
auf Bestellung 6660 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 398+ | 1.64 EUR |
| CSD18504KCS |
|
Hersteller: Texas Instruments
Description: MOSFET N-CH 40V 53A/100A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 20 V
Description: MOSFET N-CH 40V 53A/100A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 20 V
auf Bestellung 6810 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 317+ | 1.75 EUR |
| CSD18504KCS |
|
Hersteller: Texas Instruments
MOSFETs 40V N-Ch NexFET Pwr MOSFET
MOSFETs 40V N-Ch NexFET Pwr MOSFET
auf Bestellung 632 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.02 EUR |
| 10+ | 2.07 EUR |
| 100+ | 1.76 EUR |
| 500+ | 1.44 EUR |
| 1000+ | 1.23 EUR |
| 2500+ | 1.18 EUR |
| 5000+ | 1.15 EUR |
| CSD18504KCS |
|
Hersteller: Texas Instruments
Description: MOSFET N-CH 40V 53A/100A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 20 V
Description: MOSFET N-CH 40V 53A/100A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 20 V
auf Bestellung 73 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.61 EUR |
| 50+ | 2.24 EUR |