
CSD18510KCS Texas Instruments
auf Bestellung 600 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis |
---|---|
99+ | 1.53 EUR |
103+ | 1.42 EUR |
500+ | 1.19 EUR |
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Technische Details CSD18510KCS Texas Instruments
Description: MOSFET N-CH 40V 200A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 200A (Ta), Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V, Power Dissipation (Max): 250W (Ta), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 11400 pF @ 20 V.
Weitere Produktangebote CSD18510KCS nach Preis ab 1.42 EUR bis 3.26 EUR
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CSD18510KCS | Hersteller : Texas Instruments |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Ta) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V Power Dissipation (Max): 250W (Ta) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 11400 pF @ 20 V |
auf Bestellung 694 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD18510KCS | Hersteller : Texas Instruments |
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auf Bestellung 966 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD18510KCS | Hersteller : Texas Instruments |
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auf Bestellung 650 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD18510KCS Produktcode: 204826
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CSD18510KCS | Hersteller : Texas Instruments |
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Produkt ist nicht verfügbar |
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CSD18510KCS | Hersteller : Texas Instruments |
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CSD18510KCS | Hersteller : TEXAS INSTRUMENTS |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 200A; Idm: 400A; 250W; TO220-3 Type of transistor: N-MOSFET Technology: NexFET™ Polarisation: unipolar Drain-source voltage: 40V Drain current: 200A Power dissipation: 250W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 2.6mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Heatsink thickness: 1.14...1.4mm Pulsed drain current: 400A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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CSD18510KCS | Hersteller : TEXAS INSTRUMENTS |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 200A; Idm: 400A; 250W; TO220-3 Type of transistor: N-MOSFET Technology: NexFET™ Polarisation: unipolar Drain-source voltage: 40V Drain current: 200A Power dissipation: 250W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 2.6mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Heatsink thickness: 1.14...1.4mm Pulsed drain current: 400A |
Produkt ist nicht verfügbar |