Weitere Produktangebote CSD18510KCS nach Preis ab 1.48 EUR bis 4.63 EUR
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CSD18510KCS | Texas Instruments |
 Description: MOSFET N-CH 40V 200A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Ta) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V Power Dissipation (Max): 250W (Ta) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 11400 pF @ 20 V |
auf Bestellung 237 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD18510KCS | Texas Instruments |
MOSFETs 40-V N channel NexF ET power MOSFET si |
auf Bestellung 748 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD18510KCS |
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Hersteller: Texas Instruments
Description: MOSFET N-CH 40V 200A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 11400 pF @ 20 V
Description: MOSFET N-CH 40V 200A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 11400 pF @ 20 V
auf Bestellung 237 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 4.49 EUR |
| 50+ | 2.21 EUR |
| 100+ | 1.99 EUR |
| CSD18510KCS |
|
Hersteller: Texas Instruments
MOSFETs 40-V N channel NexF ET power MOSFET si
MOSFETs 40-V N channel NexF ET power MOSFET si
auf Bestellung 748 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 4.63 EUR |
| 10+ | 2.6 EUR |
| 100+ | 2.2 EUR |
| 500+ | 1.88 EUR |
| 1000+ | 1.5 EUR |
| 5000+ | 1.48 EUR |