CSD18510KTT Texas Instruments
| Anzahl | Preis |
|---|---|
| 1+ | 4.29 EUR |
| 10+ | 2.94 EUR |
| 100+ | 2.13 EUR |
| 500+ | 1.94 EUR |
| 1000+ | 1.53 EUR |
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Technische Details CSD18510KTT Texas Instruments
Description: MOSFET N-CH 40V 274A DDPAK, Input Capacitance (Ciss) (Max) @ Vds: 11400 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 153 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: TO-263 (DDPAK-3), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Power Dissipation (Max): 250W (Ta), Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V, Current - Continuous Drain (Id) @ 25°C: 274A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).
Weitere Produktangebote CSD18510KTT nach Preis ab 2.37 EUR bis 4.63 EUR
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CSD18510KTT | Texas Instruments |
 Description: MOSFET N-CH 40V 274A DDPAKInput Capacitance (Ciss) (Max) @ Vds: 11400 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 153 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: TO-263 (DDPAK-3) Vgs(th) (Max) @ Id: 2.3V @ 250µA Power Dissipation (Max): 250W (Ta) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V Current - Continuous Drain (Id) @ 25°C: 274A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
auf Bestellung 225 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD18510KTT |
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Hersteller: Texas Instruments
Description: MOSFET N-CH 40V 274A DDPAK
Input Capacitance (Ciss) (Max) @ Vds: 11400 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 153 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-263 (DDPAK-3)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 250W (Ta)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 274A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 40V 274A DDPAK
Input Capacitance (Ciss) (Max) @ Vds: 11400 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 153 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-263 (DDPAK-3)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 250W (Ta)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 274A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 225 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 4.63 EUR |
| 10+ | 3.23 EUR |
| 100+ | 2.37 EUR |