
CSD18511KCS Texas Instruments
auf Bestellung 121 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
1+ | 3.03 EUR |
10+ | 1.60 EUR |
100+ | 1.45 EUR |
500+ | 1.18 EUR |
1000+ | 1.04 EUR |
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Technische Details CSD18511KCS Texas Instruments
Description: MOSFET N-CH 40V 194A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 194A (Ta), Rds On (Max) @ Id, Vgs: 2.6mOhm @ 100A, 10V, Power Dissipation (Max): 188W (Ta), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: TO-220-3, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5940 pF @ 20 V.
Weitere Produktangebote CSD18511KCS nach Preis ab 1.19 EUR bis 5.63 EUR
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CSD18511KCS | Hersteller : Texas Instruments |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 194A (Ta) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 100A, 10V Power Dissipation (Max): 188W (Ta) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5940 pF @ 20 V |
auf Bestellung 648 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD18511KCS | Hersteller : Texas Instruments |
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auf Bestellung 220 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD18511KCS | Hersteller : Texas Instruments |
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CSD18511KCS | Hersteller : Texas Instruments |
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CSD18511KCS | Hersteller : Texas Instruments |
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Produkt ist nicht verfügbar |
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CSD18511KCS | Hersteller : Texas Instruments |
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Produkt ist nicht verfügbar |
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CSD18511KCS | Hersteller : TEXAS INSTRUMENTS |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 110A; Idm: 400A; 188W; TO220-3 Type of transistor: N-MOSFET Technology: NexFET™ Polarisation: unipolar Drain-source voltage: 40V Drain current: 110A Power dissipation: 188W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 4.2mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Heatsink thickness: 1.14...1.4mm Pulsed drain current: 400A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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CSD18511KCS | Hersteller : TEXAS INSTRUMENTS |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 110A; Idm: 400A; 188W; TO220-3 Type of transistor: N-MOSFET Technology: NexFET™ Polarisation: unipolar Drain-source voltage: 40V Drain current: 110A Power dissipation: 188W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 4.2mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Heatsink thickness: 1.14...1.4mm Pulsed drain current: 400A |
Produkt ist nicht verfügbar |