
CSD18511KTTT Texas Instruments

Description: MOSFET N-CH 40V 110A/194A DDPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Ta), 194A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 100A, 10V
Power Dissipation (Max): 188W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-263 (DDPAK-3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5940 pF @ 20 V
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
50+ | 2.17 EUR |
100+ | 1.98 EUR |
150+ | 1.88 EUR |
250+ | 1.76 EUR |
350+ | 1.70 EUR |
500+ | 1.63 EUR |
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Technische Details CSD18511KTTT Texas Instruments
Description: MOSFET N-CH 40V 110A/194A DDPAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 110A (Ta), 194A (Tc), Rds On (Max) @ Id, Vgs: 2.6mOhm @ 100A, 10V, Power Dissipation (Max): 188W (Ta), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: TO-263 (DDPAK-3), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5940 pF @ 20 V.
Weitere Produktangebote CSD18511KTTT nach Preis ab 3.18 EUR bis 4.93 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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CSD18511KTTT | Hersteller : Texas Instruments |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Ta), 194A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 100A, 10V Power Dissipation (Max): 188W (Ta) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: TO-263 (DDPAK-3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5940 pF @ 20 V |
auf Bestellung 554 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD18511KTTT | Hersteller : Texas Instruments |
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CSD18511KTTT | Hersteller : Texas Instruments |
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CSD18511KTTT | Hersteller : Texas Instruments |
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CSD18511KTTT | Hersteller : Texas Instruments |
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CSD18511KTTT | Hersteller : TEXAS INSTRUMENTS |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 110A; Idm: 400A; 188W; D2PAK Type of transistor: N-MOSFET Technology: NexFET™ Polarisation: unipolar Drain-source voltage: 40V Drain current: 110A Power dissipation: 188W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 4.2mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 400A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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CSD18511KTTT | Hersteller : Texas Instruments |
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Produkt ist nicht verfügbar |
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CSD18511KTTT | Hersteller : TEXAS INSTRUMENTS |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 110A; Idm: 400A; 188W; D2PAK Type of transistor: N-MOSFET Technology: NexFET™ Polarisation: unipolar Drain-source voltage: 40V Drain current: 110A Power dissipation: 188W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 4.2mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 400A |
Produkt ist nicht verfügbar |