
CSD18511Q5AT Texas Instruments
auf Bestellung 322 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis |
---|---|
152+ | 0.98 EUR |
153+ | 0.93 EUR |
158+ | 0.87 EUR |
250+ | 0.81 EUR |
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Technische Details CSD18511Q5AT Texas Instruments
Description: MOSFET N-CH 40V 159A 8VSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 159A (Tc), Rds On (Max) @ Id, Vgs: 3.5mOhm @ 24A, 4.5V, Power Dissipation (Max): 104W (Tc), Vgs(th) (Max) @ Id: 2.45V @ 250µA, Supplier Device Package: 8-VSONP (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5850 pF @ 10 V.
Weitere Produktangebote CSD18511Q5AT nach Preis ab 0.78 EUR bis 3.12 EUR
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CSD18511Q5AT | Hersteller : Texas Instruments |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 159A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 24A, 4.5V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 2.45V @ 250µA Supplier Device Package: 8-VSONP (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5850 pF @ 10 V |
auf Bestellung 5250 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD18511Q5AT | Hersteller : Texas Instruments |
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auf Bestellung 322 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD18511Q5AT | Hersteller : Texas Instruments |
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auf Bestellung 6997 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD18511Q5AT | Hersteller : Texas Instruments |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 159A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 24A, 4.5V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 2.45V @ 250µA Supplier Device Package: 8-VSONP (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5850 pF @ 10 V |
auf Bestellung 6060 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD18511Q5AT | Hersteller : Texas Instruments |
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CSD18511Q5AT | Hersteller : Texas Instruments |
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Produkt ist nicht verfügbar |
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CSD18511Q5AT | Hersteller : Texas Instruments |
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CSD18511Q5AT | Hersteller : TEXAS INSTRUMENTS |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 104W; VSONP8; 5x6mm Type of transistor: N-MOSFET Technology: NexFET™ Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 104W Case: VSONP8 Gate-source voltage: ±20V On-state resistance: 1.9mΩ Mounting: SMD Gate charge: 63nC Kind of package: reel; tape Kind of channel: enhancement Dimensions: 5x6mm Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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CSD18511Q5AT | Hersteller : TEXAS INSTRUMENTS |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 104W; VSONP8; 5x6mm Type of transistor: N-MOSFET Technology: NexFET™ Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 104W Case: VSONP8 Gate-source voltage: ±20V On-state resistance: 1.9mΩ Mounting: SMD Gate charge: 63nC Kind of package: reel; tape Kind of channel: enhancement Dimensions: 5x6mm |
Produkt ist nicht verfügbar |