CSD18512Q5BT Texas Instruments
Hersteller: Texas InstrumentsDescription: MOSFET N-CH 40V 211A 8VSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 211A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 30A, 10V
Power Dissipation (Max): 139W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-VSON-CLIP (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7120 pF @ 20 V
auf Bestellung 250 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 250+ | 1.78 EUR |
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Technische Details CSD18512Q5BT Texas Instruments
Description: MOSFET N-CH 40V 211A 8VSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 211A (Tc), Rds On (Max) @ Id, Vgs: 1.6mOhm @ 30A, 10V, Power Dissipation (Max): 139W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 8-VSON-CLIP (5x6), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7120 pF @ 20 V.
Weitere Produktangebote CSD18512Q5BT nach Preis ab 1.53 EUR bis 4.45 EUR
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CSD18512Q5BT | Hersteller : Texas Instruments |
MOSFETs 40-V N channel NexF ET power MOSFET si A 595-CSD18512Q5B |
auf Bestellung 379 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD18512Q5BT | Hersteller : Texas Instruments |
Description: MOSFET N-CH 40V 211A 8VSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 211A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 30A, 10V Power Dissipation (Max): 139W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-VSON-CLIP (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7120 pF @ 20 V |
auf Bestellung 350 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD18512Q5BT | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 40V 100A 8-Pin VSON-CLIP EP T/R |
Produkt ist nicht verfügbar |
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CSD18512Q5BT | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 40V 100A 8-Pin VSON-CLIP EP T/R |
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| CSD18512Q5BT | Hersteller : TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 400A; 139W Type of transistor: N-MOSFET Technology: NexFET™ Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 139W Case: VSON-CLIP8 Gate-source voltage: ±20V On-state resistance: 2.3mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 400A Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| CSD18512Q5BT | Hersteller : TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 400A; 139W Type of transistor: N-MOSFET Technology: NexFET™ Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 139W Case: VSON-CLIP8 Gate-source voltage: ±20V On-state resistance: 2.3mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 400A Application: automotive industry |
Produkt ist nicht verfügbar |