CSD18531Q5AT Texas Instruments
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 250+ | 1.14 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details CSD18531Q5AT Texas Instruments
Description: MOSFET N-CH 60V 100A 8VSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Ta), Rds On (Max) @ Id, Vgs: 4.6mOhm @ 22A, 10V, Power Dissipation (Max): 3.1W (Ta), 156W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: 8-VSONP (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3840 pF @ 30 V.
Weitere Produktangebote CSD18531Q5AT nach Preis ab 1.14 EUR bis 4.70 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
CSD18531Q5AT | Hersteller : Texas Instruments |
 Trans MOSFET N-CH Si 60V 100A 8-Pin VSONP EP T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
|
CSD18531Q5AT | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 60V 100A 8-Pin VSONP EP T/R |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
 |
CSD18531Q5AT | Hersteller : Texas Instruments |
Description: MOSFET N-CH 60V 100A 8VSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Rds On (Max) @ Id, Vgs: 4.6mOhm @ 22A, 10V Power Dissipation (Max): 3.1W (Ta), 156W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: 8-VSONP (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3840 pF @ 30 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
 |
CSD18531Q5AT | Hersteller : Texas Instruments |
MOSFETs 60V N-channel NexFET Power MOSFET A 595-CSD18531Q5A |
auf Bestellung 9973 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
CSD18531Q5AT | Hersteller : Texas Instruments |
Description: MOSFET N-CH 60V 100A 8VSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Rds On (Max) @ Id, Vgs: 4.6mOhm @ 22A, 10V Power Dissipation (Max): 3.1W (Ta), 156W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: 8-VSONP (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3840 pF @ 30 V |
auf Bestellung 1217 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
CSD18531Q5AT | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 60V 100A 8-Pin VSONP EP T/R |
auf Bestellung 7 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||||
|
|
CSD18531Q5AT | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 60V 100A 8-Pin VSONP EP T/R |
auf Bestellung 7 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||||
|
|
CSD18531Q5AT | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 60V 100A 8-Pin VSONP EP T/R |
Produkt ist nicht verfügbar |
|||||||||||||||
 |
CSD18531Q5AT | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 60V 100A 8-Pin VSONP EP T/R |
Produkt ist nicht verfügbar |
|||||||||||||||
 |
CSD18531Q5AT | Hersteller : TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 156W; VSONP8; 5x6mm Type of transistor: N-MOSFET Technology: NexFET™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 100A Power dissipation: 156W Case: VSONP8 Gate-source voltage: ±20V On-state resistance: 3.5mΩ Mounting: SMD Gate charge: 36nC Kind of package: reel; tape Kind of channel: enhancement Dimensions: 5x6mm Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||||
|
|
CSD18531Q5AT | Hersteller : TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 156W; VSONP8; 5x6mm Type of transistor: N-MOSFET Technology: NexFET™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 100A Power dissipation: 156W Case: VSONP8 Gate-source voltage: ±20V On-state resistance: 3.5mΩ Mounting: SMD Gate charge: 36nC Kind of package: reel; tape Kind of channel: enhancement Dimensions: 5x6mm |
Produkt ist nicht verfügbar |