CSD18531Q5AT Texas Instruments
Hersteller: Texas Instruments
Description: MOSFET N-CH 60V 100A 8VSON
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3840 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-VSONP (5x6)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 156W (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 22A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
| Anzahl | Preis |
|---|---|
| 250+ | 1.84 EUR |
| 500+ | 1.68 EUR |
| 750+ | 1.6 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details CSD18531Q5AT Texas Instruments
Description: MOSFET N-CH 60V 100A 8VSON, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 3840 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 8-VSONP (5x6), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Power Dissipation (Max): 3.1W (Ta), 156W (Tc), Rds On (Max) @ Id, Vgs: 4.6mOhm @ 22A, 10V, Current - Continuous Drain (Id) @ 25°C: 100A (Ta).
Weitere Produktangebote CSD18531Q5AT nach Preis ab 1.44 EUR bis 4.7 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
CSD18531Q5AT | Texas Instruments |
MOSFETs 60V N-channel NexFET Power MOSFET A 595- A 595-CSD18531Q5A |
auf Bestellung 4885 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
|
CSD18531Q5AT | Texas Instruments |
Description: MOSFET N-CH 60V 100A 8VSONInput Capacitance (Ciss) (Max) @ Vds: 3840 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-VSONP (5x6) Vgs(th) (Max) @ Id: 2.3V @ 250µA Power Dissipation (Max): 3.1W (Ta), 156W (Tc) Rds On (Max) @ Id, Vgs: 4.6mOhm @ 22A, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
auf Bestellung 1217 Stücke: Lieferzeit 10-14 Tag (e) |
|
| CSD18531Q5AT |
![]() |
Hersteller: Texas Instruments
MOSFETs 60V N-channel NexFET Power MOSFET A 595- A 595-CSD18531Q5A
MOSFETs 60V N-channel NexFET Power MOSFET A 595- A 595-CSD18531Q5A
auf Bestellung 4885 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 4.24 EUR |
| 10+ | 2.76 EUR |
| 100+ | 1.66 EUR |
| 500+ | 1.45 EUR |
| 1000+ | 1.44 EUR |
| CSD18531Q5AT |
![]() |
Hersteller: Texas Instruments
Description: MOSFET N-CH 60V 100A 8VSON
Input Capacitance (Ciss) (Max) @ Vds: 3840 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-VSONP (5x6)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 156W (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 22A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 60V 100A 8VSON
Input Capacitance (Ciss) (Max) @ Vds: 3840 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-VSONP (5x6)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 156W (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 22A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 1217 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 4.7 EUR |
| 10+ | 3.03 EUR |
| 100+ | 2.09 EUR |


