Technische Details CSD18531Q5AT Texas Instruments
Description: MOSFET N-CH 60V 100A 8VSON, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 3840 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 8-VSONP (5x6), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Power Dissipation (Max): 3.1W (Ta), 156W (Tc), Rds On (Max) @ Id, Vgs: 4.6mOhm @ 22A, 10V, Current - Continuous Drain (Id) @ 25°C: 100A (Ta).
Weitere Produktangebote CSD18531Q5AT nach Preis ab 1.34 EUR bis 5.59 EUR
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CSD18531Q5AT | Texas Instruments |
 Trans MOSFET N-CH Si 60V 100A 8-Pin VSONP EP T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD18531Q5AT | Texas Instruments |
Trans MOSFET N-CH Si 60V 100A 8-Pin VSONP EP T/R |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD18531Q5AT | Texas Instruments |
Description: MOSFET N-CH 60V 100A 8VSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 3840 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-VSONP (5x6) Vgs(th) (Max) @ Id: 2.3V @ 250µA Power Dissipation (Max): 3.1W (Ta), 156W (Tc) Rds On (Max) @ Id, Vgs: 4.6mOhm @ 22A, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Ta) |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD18531Q5AT | Texas Instruments |
MOSFETs 60V N-channel NexFET Power MOSFET A 595- A 595-CSD18531Q5A |
auf Bestellung 4885 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD18531Q5AT | Texas Instruments |
Description: MOSFET N-CH 60V 100A 8VSON Input Capacitance (Ciss) (Max) @ Vds: 3840 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-VSONP (5x6) Vgs(th) (Max) @ Id: 2.3V @ 250µA Power Dissipation (Max): 3.1W (Ta), 156W (Tc) Rds On (Max) @ Id, Vgs: 4.6mOhm @ 22A, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
auf Bestellung 1217 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD18531Q5AT | Texas Instruments |
Trans MOSFET N-CH Si 60V 100A 8-Pin VSONP EP T/R |
auf Bestellung 7 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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CSD18531Q5AT | Texas Instruments |
Trans MOSFET N-CH Si 60V 100A 8-Pin VSONP EP T/R |
auf Bestellung 7 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 7 Stücke Im Einkaufswagen Stück im Wert von UAH |
| CSD18531Q5AT |
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Hersteller: Texas Instruments
Trans MOSFET N-CH Si 60V 100A 8-Pin VSONP EP T/R
Trans MOSFET N-CH Si 60V 100A 8-Pin VSONP EP T/R
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 250+ | 1.34 EUR |
| CSD18531Q5AT |
|
Hersteller: Texas Instruments
Trans MOSFET N-CH Si 60V 100A 8-Pin VSONP EP T/R
Trans MOSFET N-CH Si 60V 100A 8-Pin VSONP EP T/R
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 250+ | 1.96 EUR |
| 500+ | 1.67 EUR |
| CSD18531Q5AT |
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Hersteller: Texas Instruments
Description: MOSFET N-CH 60V 100A 8VSON
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3840 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-VSONP (5x6)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 156W (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 22A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Description: MOSFET N-CH 60V 100A 8VSON
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3840 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-VSONP (5x6)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 156W (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 22A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 250+ | 2.19 EUR |
| 500+ | 2 EUR |
| 750+ | 1.9 EUR |
| CSD18531Q5AT |
|
Hersteller: Texas Instruments
MOSFETs 60V N-channel NexFET Power MOSFET A 595- A 595-CSD18531Q5A
MOSFETs 60V N-channel NexFET Power MOSFET A 595- A 595-CSD18531Q5A
auf Bestellung 4885 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 5.05 EUR |
| 10+ | 3.28 EUR |
| 100+ | 1.98 EUR |
| 500+ | 1.73 EUR |
| 1000+ | 1.71 EUR |
| CSD18531Q5AT |
|
Hersteller: Texas Instruments
Description: MOSFET N-CH 60V 100A 8VSON
Input Capacitance (Ciss) (Max) @ Vds: 3840 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-VSONP (5x6)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 156W (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 22A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 60V 100A 8VSON
Input Capacitance (Ciss) (Max) @ Vds: 3840 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-VSONP (5x6)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 156W (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 22A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 1217 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.59 EUR |
| 10+ | 3.61 EUR |
| 100+ | 2.49 EUR |
| CSD18531Q5AT |
|
Hersteller: Texas Instruments
Trans MOSFET N-CH Si 60V 100A 8-Pin VSONP EP T/R
Trans MOSFET N-CH Si 60V 100A 8-Pin VSONP EP T/R
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)
| CSD18531Q5AT |
|
Hersteller: Texas Instruments
Trans MOSFET N-CH Si 60V 100A 8-Pin VSONP EP T/R
Trans MOSFET N-CH Si 60V 100A 8-Pin VSONP EP T/R
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)