auf Bestellung 1828 Stücke:
Lieferzeit 94-98 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 2.94 EUR |
| 10+ | 1.62 EUR |
| 100+ | 1.46 EUR |
| 500+ | 1.20 EUR |
| 1000+ | 1.08 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details CSD18533KCS Texas Instruments
Description: MOSFET N-CH 60V 72A/100A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 72A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 6.3mOhm @ 75A, 10V, Power Dissipation (Max): 192W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: TO-220-3, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3025 pF @ 30 V.
Weitere Produktangebote CSD18533KCS nach Preis ab 4.04 EUR bis 4.04 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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CSD18533KCS | Hersteller : Texas Instruments |
 Trans MOSFET N-CH Si 60V 100A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 1700 Stücke: Lieferzeit 14-21 Tag (e) |
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| CSD18533KCS | Hersteller : Texas Instruments |
Transistor N-Channel MOSFET; 60V; 20V; 9mOhm; 118A; 192W; -55°C ~ 175°C; CSD18533KCS TCSD18533kcs Anzahl je Verpackung: 5 Stücke |
auf Bestellung 18 Stücke: Lieferzeit 7-14 Tag (e) |
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CSD18533KCS Produktcode: 121207
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Lieblingsprodukt
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Transistoren > MOSFET N-CH |
Produkt ist nicht verfügbar
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CSD18533KCS | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 60V 100A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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CSD18533KCS | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 60V 100A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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CSD18533KCS | Hersteller : TEXAS INSTRUMENTS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 192W; TO220-3 Type of transistor: N-MOSFET Technology: NexFET™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 100A Power dissipation: 192W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 5mΩ Mounting: THT Gate charge: 28nC Kind of package: tube Kind of channel: enhancement Heatsink thickness: 1.14...1.4mm Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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CSD18533KCS | Hersteller : Texas Instruments |
Description: MOSFET N-CH 60V 72A/100A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 72A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 75A, 10V Power Dissipation (Max): 192W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3025 pF @ 30 V |
Produkt ist nicht verfügbar |
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CSD18533KCS | Hersteller : TEXAS INSTRUMENTS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 192W; TO220-3 Type of transistor: N-MOSFET Technology: NexFET™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 100A Power dissipation: 192W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 5mΩ Mounting: THT Gate charge: 28nC Kind of package: tube Kind of channel: enhancement Heatsink thickness: 1.14...1.4mm |
Produkt ist nicht verfügbar |