CSD18533KCS TEXAS INSTRUMENTS
Hersteller: TEXAS INSTRUMENTSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 192W; TO220-3
Mounting: THT
Drain-source voltage: 60V
Drain current: 100A
On-state resistance: 5mΩ
Type of transistor: N-MOSFET
Power dissipation: 192W
Polarisation: unipolar
Kind of package: tube
Gate charge: 28nC
Technology: NexFET™
Heatsink thickness: 1.14...1.4mm
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO220-3
auf Bestellung 255 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 36+ | 2.02 EUR |
| 40+ | 1.82 EUR |
| 44+ | 1.66 EUR |
| 55+ | 1.32 EUR |
| 58+ | 1.24 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details CSD18533KCS TEXAS INSTRUMENTS
Description: MOSFET N-CH 60V 72A/100A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 72A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 6.3mOhm @ 75A, 10V, Power Dissipation (Max): 192W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: TO-220-3, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3025 pF @ 30 V.
Weitere Produktangebote CSD18533KCS nach Preis ab 1.22 EUR bis 4.01 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
CSD18533KCS | Hersteller : TEXAS INSTRUMENTS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 192W; TO220-3 Mounting: THT Drain-source voltage: 60V Drain current: 100A On-state resistance: 5mΩ Type of transistor: N-MOSFET Power dissipation: 192W Polarisation: unipolar Kind of package: tube Gate charge: 28nC Technology: NexFET™ Heatsink thickness: 1.14...1.4mm Kind of channel: enhanced Gate-source voltage: ±20V Case: TO220-3 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 255 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||||
 |
CSD18533KCS | Hersteller : Texas Instruments |
Description: MOSFET N-CH 60V 72A/100A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 72A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 75A, 10V Power Dissipation (Max): 192W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3025 pF @ 30 V |
auf Bestellung 991 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
CSD18533KCS | Hersteller : Texas Instruments |
MOSFET 60V N-Chnl NxFT Pwr MSFT .. |
auf Bestellung 1947 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
CSD18533KCS | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 60V 100A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 1700 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||||||
| CSD18533KCS | Hersteller : Texas Instruments |
Transistor N-Channel MOSFET; 60V; 20V; 9mOhm; 118A; 192W; -55°C ~ 175°C; CSD18533KCS TCSD18533kcs Anzahl je Verpackung: 5 Stücke |
auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||||
 |
CSD18533KCS Produktcode: 121207 |
Transistoren > MOSFET N-CH |
Produkt ist nicht verfügbar
|
||||||||||||||||||
 |
CSD18533KCS | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 60V 100A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
|||||||||||||||||
|
|
CSD18533KCS | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 60V 100A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |