CSD18535KCS TEXAS INSTRUMENTS
Hersteller: TEXAS INSTRUMENTSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200A; 300W; TO220-3
Power dissipation: 300W
Polarisation: unipolar
Kind of package: tube
Gate charge: 63nC
Technology: NexFET™
Heatsink thickness: 1.14...1.4mm
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: THT
Case: TO220-3
Drain-source voltage: 60V
Drain current: 200A
On-state resistance: 1.6mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
auf Bestellung 139 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 19+ | 3.92 EUR |
| 30+ | 2.46 EUR |
| 31+ | 2.33 EUR |
| 100+ | 2.27 EUR |
| 500+ | 2.23 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details CSD18535KCS TEXAS INSTRUMENTS
Description: MOSFET N-CH 60V 200A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 200A (Ta), Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6620 pF @ 30 V.
Weitere Produktangebote CSD18535KCS nach Preis ab 2.21 EUR bis 5.67 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
CSD18535KCS | Hersteller : TEXAS INSTRUMENTS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 200A; 300W; TO220-3 Power dissipation: 300W Polarisation: unipolar Kind of package: tube Gate charge: 63nC Technology: NexFET™ Heatsink thickness: 1.14...1.4mm Kind of channel: enhancement Gate-source voltage: ±20V Mounting: THT Case: TO220-3 Drain-source voltage: 60V Drain current: 200A On-state resistance: 1.6mΩ Type of transistor: N-MOSFET |
auf Bestellung 139 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
 |
CSD18535KCS | Hersteller : Texas Instruments |
Description: MOSFET N-CH 60V 200A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Ta) Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6620 pF @ 30 V |
auf Bestellung 1791 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
CSD18535KCS | Hersteller : Texas Instruments |
MOSFETs 60-V N channel NexF ET power MOSFET si |
auf Bestellung 1049 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
CSD18535KCS Produktcode: 196763
zu Favoriten hinzufügen
Lieblingsprodukt
|
Transistoren > MOSFET N-CH |
Produkt ist nicht verfügbar
|
|||||||||||||||||||
 |
CSD18535KCS | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 60V 200A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
|||||||||||||||||
|
|
CSD18535KCS | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 60V 200A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
|||||||||||||||||
 |
CSD18535KCS | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 60V 200A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |