CSD18535KCS

Hersteller: TEXAS INSTRUMENTS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200A; 300W; TO220-3
Kind of channel: enhancement
Mounting: THT
Technology: NexFET™
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 63nC
Heatsink thickness: 1.14...1.4mm
On-state resistance: 1.6mΩ
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 200A
Power dissipation: 300W
Case: TO220-3

Hersteller: Texas Instruments
Description: MOSFET N-CH 60V 200A TO220-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 6620 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V

Hersteller: Texas Instruments
MOSFETs 60-V N channel NexF ET power MOSFET si