CSD18535KCS TEXAS INSTRUMENTS
Hersteller: TEXAS INSTRUMENTSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200A; 300W; TO220-3
Case: TO220-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: NexFET™
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 63nC
Heatsink thickness: 1.14...1.4mm
On-state resistance: 1.6mΩ
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 200A
Power dissipation: 300W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 112 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 19+ | 3.83 EUR |
| 30+ | 2.46 EUR |
| 31+ | 2.33 EUR |
| 50+ | 2.3 EUR |
| 100+ | 2.23 EUR |
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Technische Details CSD18535KCS TEXAS INSTRUMENTS
Description: MOSFET N-CH 60V 200A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 200A (Ta), Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6620 pF @ 30 V.
Weitere Produktangebote CSD18535KCS nach Preis ab 2.02 EUR bis 5.23 EUR
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CSD18535KCS | Hersteller : TEXAS INSTRUMENTS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 200A; 300W; TO220-3 Case: TO220-3 Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: NexFET™ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 63nC Heatsink thickness: 1.14...1.4mm On-state resistance: 1.6mΩ Gate-source voltage: ±20V Drain-source voltage: 60V Drain current: 200A Power dissipation: 300W |
auf Bestellung 112 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD18535KCS | Hersteller : Texas Instruments |
MOSFETs 60-V N channel NexF ET power MOSFET si |
auf Bestellung 657 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD18535KCS | Hersteller : Texas Instruments |
Description: MOSFET N-CH 60V 200A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Ta) Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6620 pF @ 30 V |
auf Bestellung 976 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD18535KCS Produktcode: 196763
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