CSD18535KTT Texas Instruments
auf Bestellung 4500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 500+ | 2.51 EUR |
| 1000+ | 2.01 EUR |
| 2500+ | 1.89 EUR |
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Technische Details CSD18535KTT Texas Instruments
Description: MOSFET N-CH 60V 200A DDPAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 200A (Ta), Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: TO-263 (DDPAK-3), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6620 pF @ 30 V.
Weitere Produktangebote CSD18535KTT nach Preis ab 2.34 EUR bis 6.05 EUR
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CSD18535KTT | Hersteller : Texas Instruments |
 Description: MOSFET N-CH 60V 200A DDPAKPackaging: Cut Tape (CT) Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Ta) Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: TO-263 (DDPAK-3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6620 pF @ 30 V |
auf Bestellung 317 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD18535KTT | Hersteller : Texas Instruments |
MOSFETs 60-V N channel NexF ET power MOSFET si A 595-CSD18535KTTT |
auf Bestellung 1167 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD18535KTT | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 60V 200A 3-Pin(2+Tab) DDPAK T/R |
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CSD18535KTT | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 60V 200A 3-Pin(2+Tab) DDPAK T/R |
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CSD18535KTT | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 60V 200A 3-Pin(2+Tab) DDPAK T/R |
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CSD18535KTT | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 60V 200A 4-Pin(3+Tab) DDPAK T/R |
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| CSD18535KTT | Hersteller : TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 200A; Idm: 400A; 300W; D2PAK Type of transistor: N-MOSFET Technology: NexFET™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 200A Power dissipation: 300W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 2.9mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 400A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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CSD18535KTT | Hersteller : Texas Instruments |
Description: MOSFET N-CH 60V 200A DDPAK Packaging: Tape & Reel (TR) Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Ta) Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: TO-263 (DDPAK-3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6620 pF @ 30 V |
Produkt ist nicht verfügbar |
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| CSD18535KTT | Hersteller : TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 200A; Idm: 400A; 300W; D2PAK Type of transistor: N-MOSFET Technology: NexFET™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 200A Power dissipation: 300W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 2.9mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 400A |
Produkt ist nicht verfügbar |