CSD18535KTT Texas Instruments
auf Bestellung 438 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 5.35 EUR |
| 10+ | 3.92 EUR |
| 100+ | 3.06 EUR |
| 500+ | 2.69 EUR |
| 1000+ | 2.43 EUR |
| 2500+ | 2.34 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details CSD18535KTT Texas Instruments
Description: MOSFET N-CH 60V 200A DDPAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 200A (Ta), Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: TO-263 (DDPAK-3), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6620 pF @ 30 V.
Weitere Produktangebote CSD18535KTT nach Preis ab 2.79 EUR bis 6.05 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
CSD18535KTT | Hersteller : Texas Instruments |
 Description: MOSFET N-CH 60V 200A DDPAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Ta) Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: TO-263 (DDPAK-3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6620 pF @ 30 V |
auf Bestellung 330 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||
 |
CSD18535KTT | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 60V 200A 3-Pin(2+Tab) DDPAK T/R |
Produkt ist nicht verfügbar |
|||||||||
|
|
CSD18535KTT | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 60V 200A 3-Pin(2+Tab) DDPAK T/R |
Produkt ist nicht verfügbar |
|||||||||
|
|
CSD18535KTT | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 60V 200A 3-Pin(2+Tab) DDPAK T/R |
Produkt ist nicht verfügbar |
|||||||||
 |
CSD18535KTT | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 60V 200A 4-Pin(3+Tab) DDPAK T/R |
Produkt ist nicht verfügbar |
|||||||||
|
|
CSD18535KTT | Hersteller : Texas Instruments |
Description: MOSFET N-CH 60V 200A DDPAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Ta) Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: TO-263 (DDPAK-3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6620 pF @ 30 V |
Produkt ist nicht verfügbar |