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CSD18535KTTT

CSD18535KTTT Texas Instruments


suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18535ktt Hersteller: Texas Instruments
Description: MOSFET N-CH 60V 200A/279A DDPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Ta), 279A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-263 (DDPAK-3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6620 pF @ 30 V
auf Bestellung 650 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
50+4.34 EUR
100+3.96 EUR
150+3.76 EUR
250+3.54 EUR
350+3.41 EUR
500+3.28 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details CSD18535KTTT Texas Instruments

Description: MOSFET N-CH 60V 200A/279A DDPAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 200A (Ta), 279A (Tc), Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: TO-263 (DDPAK-3), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6620 pF @ 30 V.

Weitere Produktangebote CSD18535KTTT nach Preis ab 3.29 EUR bis 8.34 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
CSD18535KTTT CSD18535KTTT Hersteller : Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18535ktt MOSFETs 60-V, N channel NexFET™ power MOSFET, single D2PAK, 2 mOhm 2-DDPAK/TO-263 -55 to 175
auf Bestellung 186 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+7.23 EUR
10+5.05 EUR
50+4.03 EUR
100+3.54 EUR
250+3.29 EUR
Im Einkaufswagen  Stück im Wert von  UAH
CSD18535KTTT CSD18535KTTT Hersteller : Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18535ktt Description: MOSFET N-CH 60V 200A/279A DDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Ta), 279A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-263 (DDPAK-3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6620 pF @ 30 V
auf Bestellung 704 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.34 EUR
10+5.54 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
CSD18535KTTT CSD18535KTTT Hersteller : Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18535ktt Trans MOSFET N-CH Si 60V 200A 3-Pin(2+Tab) DDPAK T/R
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CSD18535KTTT CSD18535KTTT Hersteller : Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18535ktt Trans MOSFET N-CH Si 60V 200A 3-Pin(2+Tab) DDPAK T/R
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CSD18535KTTT CSD18535KTTT Hersteller : Texas Instruments getliterature.pdf Trans MOSFET N-CH Si 60V 200A 4-Pin(3+Tab) DDPAK T/R
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CSD18535KTTT CSD18535KTTT Hersteller : TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18535ktt Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200A; Idm: 400A; 300W; D2PAK
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 200A
Power dissipation: 300W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 2.9mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 400A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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CSD18535KTTT CSD18535KTTT Hersteller : TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18535ktt Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200A; Idm: 400A; 300W; D2PAK
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 200A
Power dissipation: 300W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 2.9mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 400A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH