CSD18535KTTT Texas Instruments
Hersteller: Texas Instruments
Description: MOSFET N-CH 60V 200A/279A DDPAK
Input Capacitance (Ciss) (Max) @ Vds: 6620 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-263 (DDPAK-3)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Ta), 279A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 50+ | 4.19 EUR |
| 100+ | 3.82 EUR |
| 150+ | 3.63 EUR |
| 250+ | 3.42 EUR |
| 350+ | 3.3 EUR |
| 500+ | 3.17 EUR |
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Technische Details CSD18535KTTT Texas Instruments
Description: MOSFET N-CH 60V 200A/279A DDPAK, Input Capacitance (Ciss) (Max) @ Vds: 6620 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: TO-263 (DDPAK-3), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Power Dissipation (Max): 300W (Tc), Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V, Current - Continuous Drain (Id) @ 25°C: 200A (Ta), 279A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).
Weitere Produktangebote CSD18535KTTT nach Preis ab 3.12 EUR bis 8.04 EUR
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CSD18535KTTT | Texas Instruments |
MOSFETs 60-V N channel NexF ET power MOSFET si A 595-CSD18535KTT |
auf Bestellung 32 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD18535KTTT | Texas Instruments |
Description: MOSFET N-CH 60V 200A/279A DDPAK Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: TO-263 (DDPAK-3) Vgs(th) (Max) @ Id: 2.4V @ 250µA Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V Current - Continuous Drain (Id) @ 25°C: 200A (Ta), 279A (Tc) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 6620 pF @ 30 V Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
auf Bestellung 537 Stücke: Lieferzeit 10-14 Tag (e) |
|
| CSD18535KTTT |
|
Hersteller: Texas Instruments
MOSFETs 60-V N channel NexF ET power MOSFET si A 595-CSD18535KTT
MOSFETs 60-V N channel NexF ET power MOSFET si A 595-CSD18535KTT
auf Bestellung 32 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 7.9 EUR |
| 10+ | 4.12 EUR |
| 100+ | 3.12 EUR |
| CSD18535KTTT |
|
Hersteller: Texas Instruments
Description: MOSFET N-CH 60V 200A/279A DDPAK
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-263 (DDPAK-3)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Ta), 279A (Tc)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 6620 pF @ 30 V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 60V 200A/279A DDPAK
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-263 (DDPAK-3)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Ta), 279A (Tc)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 6620 pF @ 30 V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 537 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 8.04 EUR |
| 10+ | 5.35 EUR |