CSD18536KCS Texas Instruments
auf Bestellung 954 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 135+ | 4.03 EUR |
| 500+ | 3.69 EUR |
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Technische Details CSD18536KCS Texas Instruments
Description: MOSFET N-CH 60V 200A TO220-3, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 200A (Ta), Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V, Power Dissipation (Max): 375W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11430 pF @ 30 V.
Weitere Produktangebote CSD18536KCS nach Preis ab 4.44 EUR bis 7.88 EUR
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CSD18536KCS | Hersteller : Texas Instruments |
 Description: MOSFET N-CH 60V 200A TO220-3Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Ta) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11430 pF @ 30 V |
auf Bestellung 954 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD18536KCS | Hersteller : Texas Instruments |
Description: MOSFET N-CH 60V 200A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Ta) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11430 pF @ 30 V |
auf Bestellung 6 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD18536KCS Produktcode: 196562
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CSD18536KCS | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 60V 200A 3-Pin(3+Tab) TO-220 Tube |
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CSD18536KCS | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 60V 200A 3-Pin(3+Tab) TO-220 Tube |
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CSD18536KCS | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 60V 200A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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CSD18536KCS | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 60V 200A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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CSD18536KCS | Hersteller : Texas Instruments |
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CSD18536KCS | Hersteller : TEXAS INSTRUMENTS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 200A; 375W; TO220-3 Type of transistor: N-MOSFET Technology: NexFET™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 200A Power dissipation: 375W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 1.3mΩ Mounting: THT Gate charge: 83nC Kind of package: tube Kind of channel: enhancement Heatsink thickness: 1.14...1.4mm |
Produkt ist nicht verfügbar |