
CSD18536KCS Texas Instruments
auf Bestellung 954 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis |
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147+ | 3.7 EUR |
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Technische Details CSD18536KCS Texas Instruments
Description: MOSFET N-CH 60V 200A TO220-3, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 200A (Ta), Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V, Power Dissipation (Max): 375W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11430 pF @ 30 V.
Weitere Produktangebote CSD18536KCS nach Preis ab 3.3 EUR bis 7.52 EUR
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CSD18536KCS | Hersteller : Texas Instruments |
![]() Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Ta) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11430 pF @ 30 V |
auf Bestellung 954 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD18536KCS | Hersteller : TEXAS INSTRUMENTS |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 200A; 375W; TO220-3 Drain-source voltage: 60V Drain current: 200A On-state resistance: 1.3mΩ Type of transistor: N-MOSFET Power dissipation: 375W Polarisation: unipolar Kind of package: tube Gate charge: 83nC Technology: NexFET™ Heatsink thickness: 1.14...1.4mm Kind of channel: enhancement Gate-source voltage: ±20V Mounting: THT Case: TO220-3 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 487 Stücke: Lieferzeit 7-14 Tag (e) |
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CSD18536KCS | Hersteller : TEXAS INSTRUMENTS |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 200A; 375W; TO220-3 Drain-source voltage: 60V Drain current: 200A On-state resistance: 1.3mΩ Type of transistor: N-MOSFET Power dissipation: 375W Polarisation: unipolar Kind of package: tube Gate charge: 83nC Technology: NexFET™ Heatsink thickness: 1.14...1.4mm Kind of channel: enhancement Gate-source voltage: ±20V Mounting: THT Case: TO220-3 |
auf Bestellung 487 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD18536KCS | Hersteller : Texas Instruments |
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auf Bestellung 461 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD18536KCS | Hersteller : Texas Instruments |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Ta) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11430 pF @ 30 V |
auf Bestellung 360 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD18536KCS | Hersteller : Texas Instruments |
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auf Bestellung 12 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD18536KCS Produktcode: 196562
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CSD18536KCS | Hersteller : Texas Instruments |
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CSD18536KCS | Hersteller : Texas Instruments |
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CSD18536KCS | Hersteller : Texas Instruments |
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CSD18536KCS | Hersteller : Texas Instruments |
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Produkt ist nicht verfügbar |