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CSD18536KTTT

CSD18536KTTT Texas Instruments

suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18536ktt
Hersteller: Texas Instruments
Description: MOSFET N-CH 60V 200A/349A DDPAK
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-263 (DDPAK-3)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 200A (Ta), 349A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 11430 pF @ 30 V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
50+5.63 EUR
100+5.16 EUR
150+4.92 EUR
250+4.65 EUR
350+4.49 EUR
500+4.34 EUR
Mindestbestellmenge: 50 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details CSD18536KTTT Texas Instruments

Description: MOSFET N-CH 60V 200A/349A DDPAK, Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: TO-263 (DDPAK-3), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Power Dissipation (Max): 375W (Tc), Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V, Current - Continuous Drain (Id) @ 25°C: 200A (Ta), 349A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 11430 pF @ 30 V, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).

Weitere Produktangebote CSD18536KTTT nach Preis ab 4.47 EUR bis 10.52 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
CSD18536KTTT CSD18536KTTT Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18536ktt MOSFETs 60-V N channel NexF ET power MOSFET si A 595-CSD18536KTT
auf Bestellung 259 Stücke:
Lieferzeit 10-14 Tag (e)
1+9.91 EUR
10+5.39 EUR
100+4.47 EUR
Im Einkaufswagen  Stück im Wert von  UAH
CSD18536KTTT CSD18536KTTT Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18536ktt Description: MOSFET N-CH 60V 200A/349A DDPAK
Input Capacitance (Ciss) (Max) @ Vds: 11430 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-263 (DDPAK-3)
Current - Continuous Drain (Id) @ 25°C: 200A (Ta), 349A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.52 EUR
10+7.1 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CSD18536KTTT Texas Instruments csd18536ktt_TI.pdf N-канальний ПТ, Udss, В = 60, Id = 200 А, Ptot, Вт = 375, Тип монт. = smd, Ciss, пФ @ Uds, В = 11430 @ 30, Qg, нКл = 140 @ 10 В, Rds = 1,6 мОм @ 100 A, 10 В, Tексп, °C = -55...+175, Ugs(th) = 2,2 В @ 250 мкА, Id2 = 279 А,... Транзистори Корпус: D2PAK Од.
Anzahl je Verpackung: 50 Stücke
verfügbar 30 Stücke:
Im Einkaufswagen  Stück im Wert von  UAH
CSD18536KTTT suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18536ktt
CSD18536KTTT
Hersteller: Texas Instruments
MOSFETs 60-V N channel NexF ET power MOSFET si A 595-CSD18536KTT
auf Bestellung 259 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+9.91 EUR
10+5.39 EUR
100+4.47 EUR
Im Einkaufswagen  Stück im Wert von  UAH
CSD18536KTTT suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18536ktt
CSD18536KTTT
Hersteller: Texas Instruments
Description: MOSFET N-CH 60V 200A/349A DDPAK
Input Capacitance (Ciss) (Max) @ Vds: 11430 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-263 (DDPAK-3)
Current - Continuous Drain (Id) @ 25°C: 200A (Ta), 349A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+10.52 EUR
10+7.1 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CSD18536KTTT csd18536ktt_TI.pdf
Hersteller: Texas Instruments
N-канальний ПТ, Udss, В = 60, Id = 200 А, Ptot, Вт = 375, Тип монт. = smd, Ciss, пФ @ Uds, В = 11430 @ 30, Qg, нКл = 140 @ 10 В, Rds = 1,6 мОм @ 100 A, 10 В, Tексп, °C = -55...+175, Ugs(th) = 2,2 В @ 250 мкА, Id2 = 279 А,... Транзистори Корпус: D2PAK Од.
Anzahl je Verpackung: 50 Stücke
verfügbar 30 Stücke:
Im Einkaufswagen  Stück im Wert von  UAH