
CSD18536KTTT TEXAS INSTRUMENTS

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200A; Idm: 400A; 375W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 375W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Drain current: 200A
On-state resistance: 2.2mΩ
Gate charge: 108nC
Technology: NexFET™
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 400A
Drain-source voltage: 60V
auf Bestellung 428 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis |
---|---|
15+ | 5.03 EUR |
17+ | 4.36 EUR |
18+ | 4.12 EUR |
50+ | 3.96 EUR |
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Technische Details CSD18536KTTT TEXAS INSTRUMENTS
Description: MOSFET N-CH 60V 200A/349A DDPAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 200A (Ta), 349A (Tc), Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V, Power Dissipation (Max): 375W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: TO-263 (DDPAK-3), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11430 pF @ 30 V.
Weitere Produktangebote CSD18536KTTT nach Preis ab 3.96 EUR bis 11.02 EUR
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CSD18536KTTT | Hersteller : TEXAS INSTRUMENTS |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 200A; Idm: 400A; 375W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 375W Case: D2PAK Mounting: SMD Kind of package: reel; tape Drain current: 200A On-state resistance: 2.2mΩ Gate charge: 108nC Technology: NexFET™ Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 400A Drain-source voltage: 60V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 428 Stücke: Lieferzeit 7-14 Tag (e) |
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CSD18536KTTT | Hersteller : Texas Instruments |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Ta), 349A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: TO-263 (DDPAK-3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11430 pF @ 30 V |
auf Bestellung 250 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD18536KTTT | Hersteller : Texas Instruments |
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auf Bestellung 491 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD18536KTTT | Hersteller : Texas Instruments |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Ta), 349A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: TO-263 (DDPAK-3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11430 pF @ 30 V |
auf Bestellung 343 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD18536KTTT | Hersteller : Texas Instruments |
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auf Bestellung 40 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD18536KTTT | Hersteller : Texas Instruments |
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CSD18536KTTT | Hersteller : Texas Instruments |
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Produkt ist nicht verfügbar |
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CSD18536KTTT | Hersteller : Texas Instruments |
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Produkt ist nicht verfügbar |