CSD18537NQ5A-P Texas Instruments
Hersteller: Texas Instruments
Description: PROTOTYPE
Power Dissipation (Max): 3.2W (Ta), 75W (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 54A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: 8-VSON (5x6)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
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Technische Details CSD18537NQ5A-P Texas Instruments
Description: PROTOTYPE, Power Dissipation (Max): 3.2W (Ta), 75W (Tc), Rds On (Max) @ Id, Vgs: 13mOhm @ 12A, 10V, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 54A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Bulk, Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Part Status: Active, Supplier Device Package: 8-VSON (5x6), Vgs(th) (Max) @ Id: 3.5V @ 250µA.