CSD18542KCS Texas Instruments
| Anzahl | Privatkunde |
|---|---|
| 750+ | 1.87 EUR |
| 1000+ | 1.59 EUR |
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Mindestmenge:
750 Stücke
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Technische Details CSD18542KCS Texas Instruments
Description: MOSFET N-CH 60V 200A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 170A (Tc), Rds On (Max) @ Id, Vgs: 44mOhm @ 100A, 10V, Power Dissipation (Max): 200W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5070 pF @ 30 V.
Weitere Produktangebote CSD18542KCS nach Preis ab 2.13 EUR bis 5.9 EUR
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CSD18542KCS | Texas Instruments |
 Description: MOSFET N-CH 60V 200A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Rds On (Max) @ Id, Vgs: 44mOhm @ 100A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5070 pF @ 30 V |
auf Bestellung 1568 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD18542KCS | TEXAS INSTRUMENTS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 200A; 200W; TO220-3 Power dissipation: 200W Gate charge: 44nC Polarisation: unipolar Technology: NexFET™ Drain current: 200A Kind of channel: enhancement Drain-source voltage: 60V Heatsink thickness: 1.14...1.4mm Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: TO220-3 On-state resistance: 3.3mΩ Mounting: THT |
auf Bestellung 250 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| CSD18542KCS |
|
Hersteller: Texas Instruments
Description: MOSFET N-CH 60V 200A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 100A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5070 pF @ 30 V
Description: MOSFET N-CH 60V 200A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 100A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5070 pF @ 30 V
auf Bestellung 1568 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.9 EUR |
| 10+ | 3.82 EUR |
| 50+ | 2.93 EUR |
| 100+ | 2.63 EUR |
| 500+ | 2.13 EUR |
| CSD18542KCS |
|
Hersteller: TEXAS INSTRUMENTS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200A; 200W; TO220-3
Power dissipation: 200W
Gate charge: 44nC
Polarisation: unipolar
Technology: NexFET™
Drain current: 200A
Kind of channel: enhancement
Drain-source voltage: 60V
Heatsink thickness: 1.14...1.4mm
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220-3
On-state resistance: 3.3mΩ
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200A; 200W; TO220-3
Power dissipation: 200W
Gate charge: 44nC
Polarisation: unipolar
Technology: NexFET™
Drain current: 200A
Kind of channel: enhancement
Drain-source voltage: 60V
Heatsink thickness: 1.14...1.4mm
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220-3
On-state resistance: 3.3mΩ
Mounting: THT
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)