 
CSD18542KTTT TEXAS INSTRUMENTS
 Hersteller: TEXAS INSTRUMENTS
                                                Hersteller: TEXAS INSTRUMENTSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200A; Idm: 400A; 250W; D2PAK
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 200A
Power dissipation: 250W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 400A
auf Bestellung 1796 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis | 
|---|---|
| 33+ | 2.22 EUR | 
| 40+ | 1.83 EUR | 
| 42+ | 1.73 EUR | 
| 50+ | 1.67 EUR | 
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Technische Details CSD18542KTTT TEXAS INSTRUMENTS
Description: MOSFET N-CH 60V 200A/170A DDPAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 170A (Tc), Rds On (Max) @ Id, Vgs: 4mOhm @ 100A, 10V, Power Dissipation (Max): 250W (Ta), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: TO-263 (DDPAK-3), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5070 pF @ 30 V. 
Weitere Produktangebote CSD18542KTTT nach Preis ab 1.67 EUR bis 5.3 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|   | CSD18542KTTT | Hersteller : TEXAS INSTRUMENTS |  Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 200A; Idm: 400A; 250W; D2PAK Type of transistor: N-MOSFET Technology: NexFET™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 200A Power dissipation: 250W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 5.1mΩ Mounting: SMD Gate charge: 44nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 400A Anzahl je Verpackung: 1 Stücke | auf Bestellung 1796 Stücke:Lieferzeit 7-14 Tag (e) | 
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|   | CSD18542KTTT | Hersteller : Texas Instruments |  Description: MOSFET N-CH 60V 200A/170A DDPAK Packaging: Tape & Reel (TR) Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 100A, 10V Power Dissipation (Max): 250W (Ta) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: TO-263 (DDPAK-3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5070 pF @ 30 V | auf Bestellung 200 Stücke:Lieferzeit 10-14 Tag (e) | 
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|   | CSD18542KTTT | Hersteller : Texas Instruments |  Description: MOSFET N-CH 60V 200A/170A DDPAK Packaging: Cut Tape (CT) Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 100A, 10V Power Dissipation (Max): 250W (Ta) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: TO-263 (DDPAK-3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5070 pF @ 30 V | auf Bestellung 253 Stücke:Lieferzeit 10-14 Tag (e) | 
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|   | CSD18542KTTT | Hersteller : Texas Instruments |  MOSFETs 60V N-Channel NexFET Pwr MOSFET A 595-CSD18542KTT | auf Bestellung 143 Stücke:Lieferzeit 10-14 Tag (e) | 
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|   | CSD18542KTTT | Hersteller : Texas Instruments |  Trans MOSFET N-CH Si 60V 200A 4-Pin(3+Tab) DDPAK T/R | auf Bestellung 150 Stücke:Lieferzeit 14-21 Tag (e) | |||||||||||
|   | CSD18542KTTT | Hersteller : Texas Instruments |  Trans MOSFET N-CH Si 60V 200A 3-Pin(2+Tab) DDPAK T/R | Produkt ist nicht verfügbar | |||||||||||
|   | CSD18542KTTT | Hersteller : Texas Instruments |  Trans MOSFET N-CH Si 60V 200A 3-Pin(2+Tab) DDPAK T/R | Produkt ist nicht verfügbar | |||||||||||
|   | CSD18542KTTT | Hersteller : Texas Instruments |  Trans MOSFET N-CH Si 60V 200A 3-Pin(2+Tab) DDPAK T/R | Produkt ist nicht verfügbar |