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CSD18542KTTT

CSD18542KTTT Texas Instruments


suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18542ktt Hersteller: Texas Instruments
Description: MOSFET N-CH 60V 200A/170A DDPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: TO-263 (DDPAK-3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5070 pF @ 30 V
auf Bestellung 200 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
50+3.14 EUR
100+2.74 EUR
150+2.60 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details CSD18542KTTT Texas Instruments

Description: MOSFET N-CH 60V 200A/170A DDPAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 170A (Tc), Rds On (Max) @ Id, Vgs: 4mOhm @ 100A, 10V, Power Dissipation (Max): 250W (Ta), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: TO-263 (DDPAK-3), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5070 pF @ 30 V.

Weitere Produktangebote CSD18542KTTT nach Preis ab 1.63 EUR bis 5.24 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
CSD18542KTTT CSD18542KTTT Hersteller : TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18542ktt Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200A; Idm: 400A; 250W; D2PAK
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 200A
Power dissipation: 250W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 400A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1828 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
19+3.86 EUR
40+1.79 EUR
43+1.69 EUR
50+1.66 EUR
100+1.63 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
CSD18542KTTT CSD18542KTTT Hersteller : TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18542ktt Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200A; Idm: 400A; 250W; D2PAK
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 200A
Power dissipation: 250W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 400A
auf Bestellung 1828 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.86 EUR
40+1.79 EUR
43+1.69 EUR
50+1.66 EUR
100+1.63 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
CSD18542KTTT CSD18542KTTT Hersteller : Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18542ktt MOSFETs 60V N-Channel NexFET Pwr MOSFET
auf Bestellung 298 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.75 EUR
10+2.64 EUR
100+2.24 EUR
250+2.08 EUR
Im Einkaufswagen  Stück im Wert von  UAH
CSD18542KTTT CSD18542KTTT Hersteller : Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18542ktt Description: MOSFET N-CH 60V 200A/170A DDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: TO-263 (DDPAK-3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5070 pF @ 30 V
auf Bestellung 253 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.24 EUR
10+3.20 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
CSD18542KTTT CSD18542KTTT Hersteller : Texas Instruments slps590.pdf Trans MOSFET N-CH Si 60V 200A 4-Pin(3+Tab) DDPAK T/R
auf Bestellung 150 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
CSD18542KTTT CSD18542KTTT Hersteller : Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18542ktt Trans MOSFET N-CH Si 60V 200A 3-Pin(2+Tab) DDPAK T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CSD18542KTTT CSD18542KTTT Hersteller : Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18542ktt Trans MOSFET N-CH Si 60V 200A 3-Pin(2+Tab) DDPAK T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CSD18542KTTT CSD18542KTTT Hersteller : Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18542ktt Trans MOSFET N-CH Si 60V 200A 3-Pin(2+Tab) DDPAK T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH