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CSD18563Q5AT

CSD18563Q5AT Texas Instruments

suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18563q5a
Hersteller: Texas Instruments
Description: MOSFET N-CH 60V 100A 8VSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 18A, 10V
Power Dissipation (Max): 3.2W (Ta), 116W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-VSONP (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 30 V
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
250+1.33 EUR
500+1.21 EUR
750+1.15 EUR
1250+1.08 EUR
1750+1.04 EUR
2500+1.01 EUR
6250+0.96 EUR
Mindestbestellmenge: 250 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details CSD18563Q5AT Texas Instruments

Description: MOSFET N-CH 60V 100A 8VSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Ta), Rds On (Max) @ Id, Vgs: 6.8mOhm @ 18A, 10V, Power Dissipation (Max): 3.2W (Ta), 116W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: 8-VSONP (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 30 V.

Weitere Produktangebote CSD18563Q5AT nach Preis ab 1.2 EUR bis 3.77 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
CSD18563Q5AT CSD18563Q5AT TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18563q5a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 116W; VSONP8; 5x6mm
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 116W
Case: VSONP8
Gate-source voltage: ±20V
On-state resistance: 5.7mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 15nC
Dimensions: 5x6mm
auf Bestellung 127 Stücke:
Lieferzeit 14-21 Tag (e)
44+1.63 EUR
49+1.47 EUR
53+1.36 EUR
60+1.2 EUR
Mindestbestellmenge: 44 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CSD18563Q5AT CSD18563Q5AT Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18563q5a Description: MOSFET N-CH 60V 100A 8VSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 18A, 10V
Power Dissipation (Max): 3.2W (Ta), 116W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-VSONP (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 30 V
auf Bestellung 8076 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.47 EUR
10+2.22 EUR
100+1.51 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CSD18563Q5AT CSD18563Q5AT Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18563q5a MOSFETs 60V NCh NexFET Power MOSFET A 595-CSD185 A 595-CSD18563Q5A
auf Bestellung 1035 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.77 EUR
10+2.43 EUR
100+1.44 EUR
Im Einkaufswagen  Stück im Wert von  UAH
CSD18563Q5AT suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18563q5a
CSD18563Q5AT
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 116W; VSONP8; 5x6mm
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 116W
Case: VSONP8
Gate-source voltage: ±20V
On-state resistance: 5.7mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 15nC
Dimensions: 5x6mm
auf Bestellung 127 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
44+1.63 EUR
49+1.47 EUR
53+1.36 EUR
60+1.2 EUR
Mindestbestellmenge: 44 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CSD18563Q5AT suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18563q5a
CSD18563Q5AT
Hersteller: Texas Instruments
Description: MOSFET N-CH 60V 100A 8VSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 18A, 10V
Power Dissipation (Max): 3.2W (Ta), 116W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-VSONP (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 30 V
auf Bestellung 8076 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
6+3.47 EUR
10+2.22 EUR
100+1.51 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CSD18563Q5AT suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18563q5a
CSD18563Q5AT
Hersteller: Texas Instruments
MOSFETs 60V NCh NexFET Power MOSFET A 595-CSD185 A 595-CSD18563Q5A
auf Bestellung 1035 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+3.77 EUR
10+2.43 EUR
100+1.44 EUR
Im Einkaufswagen  Stück im Wert von  UAH