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CSD18563Q5AT

CSD18563Q5AT Texas Instruments

suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18563q5a Hersteller: Texas Instruments
Description: MOSFET N-CH 60V 100A 8VSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 18A, 10V
Power Dissipation (Max): 3.2W (Ta), 116W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-VSONP (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 30 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
250+1.17 EUR
500+1.07 EUR
750+1.02 EUR
1250+1.00 EUR
Mindestbestellmenge: 250
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details CSD18563Q5AT Texas Instruments

Description: MOSFET N-CH 60V 100A 8VSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Ta), Rds On (Max) @ Id, Vgs: 6.8mOhm @ 18A, 10V, Power Dissipation (Max): 3.2W (Ta), 116W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: 8-VSONP (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 30 V.

Weitere Produktangebote CSD18563Q5AT nach Preis ab 1.13 EUR bis 2.41 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
CSD18563Q5AT CSD18563Q5AT Hersteller : TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18563q5a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 116W; VSONP8; 5x6mm
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 116W
Case: VSONP8
Gate-source voltage: ±20V
On-state resistance: 5.7mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
Dimensions: 5x6mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 464 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
40+1.79 EUR
46+1.59 EUR
57+1.27 EUR
60+1.20 EUR
100+1.17 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
CSD18563Q5AT CSD18563Q5AT Hersteller : TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18563q5a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 116W; VSONP8; 5x6mm
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 116W
Case: VSONP8
Gate-source voltage: ±20V
On-state resistance: 5.7mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
Dimensions: 5x6mm
auf Bestellung 464 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
40+1.79 EUR
46+1.59 EUR
57+1.27 EUR
60+1.20 EUR
100+1.17 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
CSD18563Q5AT CSD18563Q5AT Hersteller : Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18563q5a Description: MOSFET N-CH 60V 100A 8VSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 18A, 10V
Power Dissipation (Max): 3.2W (Ta), 116W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-VSONP (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 30 V
auf Bestellung 12036 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.38 EUR
10+1.85 EUR
100+1.29 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
CSD18563Q5AT CSD18563Q5AT Hersteller : Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18563q5a MOSFETs 60V NCh NexFET Power MOSFET A 595-CSD18563Q5A
auf Bestellung 3709 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.41 EUR
10+1.85 EUR
100+1.34 EUR
250+1.13 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
CSD18563Q5AT CSD18563Q5AT Hersteller : Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18563q5a Trans MOSFET N-CH Si 60V 100A 8-Pin VSONP EP T/R
Produkt ist nicht verfügbar
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CSD18563Q5AT CSD18563Q5AT Hersteller : Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18563q5a Trans MOSFET N-CH Si 60V 100A 8-Pin VSONP EP T/R
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CSD18563Q5AT CSD18563Q5AT Hersteller : Texas Instruments getliterature.pdf Trans MOSFET N-CH Si 60V 100A 8-Pin VSONP EP T/R
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CSD18563Q5AT CSD18563Q5AT Hersteller : Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd18563q5a Trans MOSFET N-CH Si 60V 100A 8-Pin VSONP EP T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH