
CSD18563Q5AT Texas Instruments

Description: MOSFET N-CH 60V 100A 8VSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 18A, 10V
Power Dissipation (Max): 3.2W (Ta), 116W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-VSONP (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 30 V
auf Bestellung 12750 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
250+ | 1.20 EUR |
500+ | 1.09 EUR |
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Technische Details CSD18563Q5AT Texas Instruments
Description: MOSFET N-CH 60V 100A 8VSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Ta), Rds On (Max) @ Id, Vgs: 6.8mOhm @ 18A, 10V, Power Dissipation (Max): 3.2W (Ta), 116W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: 8-VSONP (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 30 V.
Weitere Produktangebote CSD18563Q5AT nach Preis ab 1.13 EUR bis 2.52 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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CSD18563Q5AT | Hersteller : TEXAS INSTRUMENTS |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 116W; VSONP8; 5x6mm Type of transistor: N-MOSFET Technology: NexFET™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 100A Power dissipation: 116W Case: VSONP8 Gate-source voltage: ±20V On-state resistance: 5.7mΩ Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhancement Dimensions: 5x6mm Anzahl je Verpackung: 1 Stücke |
auf Bestellung 464 Stücke: Lieferzeit 7-14 Tag (e) |
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CSD18563Q5AT | Hersteller : TEXAS INSTRUMENTS |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 116W; VSONP8; 5x6mm Type of transistor: N-MOSFET Technology: NexFET™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 100A Power dissipation: 116W Case: VSONP8 Gate-source voltage: ±20V On-state resistance: 5.7mΩ Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhancement Dimensions: 5x6mm |
auf Bestellung 464 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD18563Q5AT | Hersteller : Texas Instruments |
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auf Bestellung 3709 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD18563Q5AT | Hersteller : Texas Instruments |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Rds On (Max) @ Id, Vgs: 6.8mOhm @ 18A, 10V Power Dissipation (Max): 3.2W (Ta), 116W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-VSONP (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 30 V |
auf Bestellung 12951 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD18563Q5AT | Hersteller : Texas Instruments |
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Produkt ist nicht verfügbar |
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CSD18563Q5AT | Hersteller : Texas Instruments |
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Produkt ist nicht verfügbar |
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CSD18563Q5AT | Hersteller : Texas Instruments |
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Produkt ist nicht verfügbar |
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CSD18563Q5AT | Hersteller : Texas Instruments |
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Produkt ist nicht verfügbar |