CSD19501KCS Texas Instruments
auf Bestellung 1750 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 1000+ | 1.33 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details CSD19501KCS Texas Instruments
Description: MOSFET N-CH 80V 100A TO220-3, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Ta), Rds On (Max) @ Id, Vgs: 6.6mOhm @ 60A, 10V, Power Dissipation (Max): 217W (Tc), Vgs(th) (Max) @ Id: 3.2V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 40 V.
Weitere Produktangebote CSD19501KCS nach Preis ab 1.36 EUR bis 5.75 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
CSD19501KCS | Hersteller : Texas Instruments |
 Description: MOSFET N-CH 80V 100A TO220-3Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Rds On (Max) @ Id, Vgs: 6.6mOhm @ 60A, 10V Power Dissipation (Max): 217W (Tc) Vgs(th) (Max) @ Id: 3.2V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 40 V |
auf Bestellung 684 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
CSD19501KCS | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 80V 100A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 684 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
 |
CSD19501KCS | Hersteller : TEXAS INSTRUMENTS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 217W; TO220-3 Type of transistor: N-MOSFET Technology: NexFET™ Polarisation: unipolar Drain-source voltage: 80V Drain current: 100A Power dissipation: 217W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 5.5mΩ Mounting: THT Gate charge: 38nC Kind of package: tube Kind of channel: enhancement Heatsink thickness: 1.14...1.4mm Anzahl je Verpackung: 1 Stücke |
auf Bestellung 153 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
|
|
CSD19501KCS | Hersteller : TEXAS INSTRUMENTS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 217W; TO220-3 Type of transistor: N-MOSFET Technology: NexFET™ Polarisation: unipolar Drain-source voltage: 80V Drain current: 100A Power dissipation: 217W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 5.5mΩ Mounting: THT Gate charge: 38nC Kind of package: tube Kind of channel: enhancement Heatsink thickness: 1.14...1.4mm |
auf Bestellung 153 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
|
CSD19501KCS | Hersteller : Texas Instruments |
Description: MOSFET N-CH 80V 100A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Rds On (Max) @ Id, Vgs: 6.6mOhm @ 60A, 10V Power Dissipation (Max): 217W (Tc) Vgs(th) (Max) @ Id: 3.2V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 40 V |
auf Bestellung 1031 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
 |
CSD19501KCS | Hersteller : Texas Instruments |
MOSFETs 80V N-CH NexFET Pwr MOSFET |
auf Bestellung 408 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
| CSD19501KCS | Hersteller : Texas Instruments |
Transistor N-Channel MOSFET; 80V; 20V; 7,9mOhm; 129A; 217W; -55°C ~ 175°C; CSD19501KCS TCSD19501kcs Anzahl je Verpackung: 5 Stücke |
auf Bestellung 7 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
|
|
CSD19501KCS | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 80V 100A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
|||||||||||||||
|
|
CSD19501KCS | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 80V 100A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
|||||||||||||||
 |
CSD19501KCS | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 80V 100A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |