CSD19501KCS Texas Instruments
Hersteller: Texas InstrumentsDescription: MOSFET N-CH 80V 100A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 60A, 10V
Power Dissipation (Max): 217W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 40 V
auf Bestellung 884 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 306+ | 1.58 EUR |
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Technische Details CSD19501KCS Texas Instruments
Description: MOSFET N-CH 80V 100A TO220-3, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Ta), Rds On (Max) @ Id, Vgs: 6.6mOhm @ 60A, 10V, Power Dissipation (Max): 217W (Tc), Vgs(th) (Max) @ Id: 3.2V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 40 V.
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Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 217W; TO220-3 Technology: NexFET™ Case: TO220-3 Mounting: THT On-state resistance: 5.5mΩ Kind of package: tube Power dissipation: 217W Polarisation: unipolar Gate charge: 38nC Heatsink thickness: 1.14...1.4mm Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 80V Drain current: 100A Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
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CSD19501KCS | Hersteller : Texas Instruments |
Description: MOSFET N-CH 80V 100A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Rds On (Max) @ Id, Vgs: 6.6mOhm @ 60A, 10V Power Dissipation (Max): 217W (Tc) Vgs(th) (Max) @ Id: 3.2V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 40 V |
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