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CSD19501KCS Texas Instruments


suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19501kcs
Hersteller: Texas Instruments
Description: MOSFET N-CH 80V 100A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 3.2V @ 250µA
Power Dissipation (Max): 217W (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
auf Bestellung 684 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
183+2.47 EUR
Mindestbestellmenge: 183 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details CSD19501KCS Texas Instruments

Description: MOSFET N-CH 80V 100A TO220-3, Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Supplier Device Package: TO-220-3, Vgs(th) (Max) @ Id: 3.2V @ 250µA, Power Dissipation (Max): 217W (Tc), Rds On (Max) @ Id, Vgs: 6.6mOhm @ 60A, 10V, Current - Continuous Drain (Id) @ 25°C: 100A (Ta), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Bulk, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Part Status: Active, FET Type: N-Channel, Technology: MOSFET (Metal Oxide).

Weitere Produktangebote CSD19501KCS nach Preis ab 1.37 EUR bis 4.82 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
CSD19501KCS CSD19501KCS TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19501kcs Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 217W; TO220-3
Kind of package: tube
Kind of channel: enhancement
Mounting: THT
Polarisation: unipolar
Technology: NexFET™
Type of transistor: N-MOSFET
Case: TO220-3
Gate charge: 38nC
Heatsink thickness: 1.14...1.4mm
On-state resistance: 5.5mΩ
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 217W
auf Bestellung 109 Stücke:
Lieferzeit 14-21 Tag (e)
27+2.69 EUR
46+1.56 EUR
51+1.42 EUR
53+1.37 EUR
Mindestbestellmenge: 27 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CSD19501KCS CSD19501KCS Texas Instruments TexasInstruments.pdf Transistor N-Channel MOSFET; 80V; 20V; 7,9mOhm; 129A; 217W; -55°C ~ 175°C; CSD19501KCS TCSD19501kcs
Anzahl je Verpackung: 10 Stücke
auf Bestellung 7 Stücke:
Lieferzeit 7-14 Tag (e)
10+3.59 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CSD19501KCS CSD19501KCS Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19501kcs Description: MOSFET N-CH 80V 100A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 60A, 10V
Power Dissipation (Max): 217W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 40 V
auf Bestellung 922 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.22 EUR
50+2.26 EUR
100+1.97 EUR
500+1.57 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CSD19501KCS CSD19501KCS Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19501kcs MOSFETs 80V N-CH NexFET Pwr MOSFET
auf Bestellung 408 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.82 EUR
10+3.13 EUR
100+2.31 EUR
500+1.92 EUR
1000+1.65 EUR
2500+1.56 EUR
Im Einkaufswagen  Stück im Wert von  UAH
CSD19501KCS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19501kcs
Hersteller: TEXAS INSTRUMENTS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 217W; TO220-3
Kind of package: tube
Kind of channel: enhancement
Mounting: THT
Polarisation: unipolar
Technology: NexFET™
Type of transistor: N-MOSFET
Case: TO220-3
Gate charge: 38nC
Heatsink thickness: 1.14...1.4mm
On-state resistance: 5.5mΩ
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 217W
auf Bestellung 109 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
27+2.69 EUR
46+1.56 EUR
51+1.42 EUR
53+1.37 EUR
Mindestbestellmenge: 27 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CSD19501KCS TexasInstruments.pdf
Hersteller: Texas Instruments
Transistor N-Channel MOSFET; 80V; 20V; 7,9mOhm; 129A; 217W; -55°C ~ 175°C; CSD19501KCS TCSD19501kcs
Anzahl je Verpackung: 10 Stücke
auf Bestellung 7 Stücke:
Lieferzeit 7-14 Tag (e)
AnzahlPreis
10+3.59 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CSD19501KCS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19501kcs
Hersteller: Texas Instruments
Description: MOSFET N-CH 80V 100A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 60A, 10V
Power Dissipation (Max): 217W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 40 V
auf Bestellung 922 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5+4.22 EUR
50+2.26 EUR
100+1.97 EUR
500+1.57 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CSD19501KCS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19501kcs
Hersteller: Texas Instruments
MOSFETs 80V N-CH NexFET Pwr MOSFET
auf Bestellung 408 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+4.82 EUR
10+3.13 EUR
100+2.31 EUR
500+1.92 EUR
1000+1.65 EUR
2500+1.56 EUR
Im Einkaufswagen  Stück im Wert von  UAH