Weitere Produktangebote CSD19502Q5B nach Preis ab 1.43 EUR bis 4.63 EUR
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CSD19502Q5B | Hersteller : Texas Instruments |
 Description: MOSFET N-CH 80V 100A 8VSONPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Rds On (Max) @ Id, Vgs: 4.1mOhm @ 19A, 10V Power Dissipation (Max): 3.1W (Ta), 195W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 250µA Supplier Device Package: 8-VSON-CLIP (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4870 pF @ 40 V |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD19502Q5B | Hersteller : Texas Instruments |
MOSFETs N-CH 3.4mOhm 80V Pow er MOSFET A 595-CSD A 595-CSD19502Q5BT |
auf Bestellung 4930 Stücke: Lieferzeit 94-98 Tag (e) |
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CSD19502Q5B | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 80V 100A 8-Pin VSON-CLIP EP T/R |
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CSD19502Q5B | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 80V 100A 8-Pin VSON-CLIP EP T/R |
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| CSD19502Q5B | Hersteller : Texas Instruments |
N-канальний ПТ, Udss, В = 80, Id = 100, Ciss, пФ @ Uds, В = 4870 @ 40, Qg, нКл = 62 @ 10 В, Rds = 4,1 мОм, Ugs(th) = 3.3 @ 250 мкA В, Опис N-канальний ПТ, Р, Вт = 191 @ 25°C, Тексп, °C = -55...+150, Тип монт. = SMD,... Група товару: Транзистори Корпус: VS Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| CSD19502Q5B | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 80V 100A 8-Pin VSON-CLIP EP T/R Група товару: Діоди та діодні збірки Од. вим: шт |
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CSD19502Q5B | Hersteller : Texas Instruments |
Description: Description: MOSFET N-CH 80V 100A 8VSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Rds On (Max) @ Id, Vgs: 4.1mOhm @ 19A, 10V Power Dissipation (Max): 3.1W (Ta), 195W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 250µA Supplier Device Package: 8-VSON-CLIP (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4870 pF @ 40 V Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Rds On (Max) @ Id, Vgs: 4.1mOhm @ 19A, 10V Power Dissipation (Max): 3.1W (Ta), 195W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 250µA Supplier Device Package: 8-VSON-CLIP (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4870 pF @ 40 V |
Produkt ist nicht verfügbar |