CSD19503KCS TEXAS INSTRUMENTS
Hersteller: TEXAS INSTRUMENTSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 188W; TO220-3
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 188W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 7.6mΩ
Mounting: THT
Gate charge: 28nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.14...1.4mm
auf Bestellung 570 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 33+ | 2.23 EUR |
| 49+ | 1.47 EUR |
| 57+ | 1.27 EUR |
| 59+ | 1.22 EUR |
| 100+ | 1.17 EUR |
| 500+ | 1.16 EUR |
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Technische Details CSD19503KCS TEXAS INSTRUMENTS
Description: MOSFET N-CH 80V 100A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Ta), Rds On (Max) @ Id, Vgs: 9.2mOhm @ 60A, 10V, Power Dissipation (Max): 188W (Tc), Vgs(th) (Max) @ Id: 3.4V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 40 V.
Weitere Produktangebote CSD19503KCS nach Preis ab 1.16 EUR bis 4.77 EUR
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CSD19503KCS | Hersteller : TEXAS INSTRUMENTS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 188W; TO220-3 Type of transistor: N-MOSFET Technology: NexFET™ Polarisation: unipolar Drain-source voltage: 80V Drain current: 100A Power dissipation: 188W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 7.6mΩ Mounting: THT Gate charge: 28nC Kind of package: tube Kind of channel: enhancement Heatsink thickness: 1.14...1.4mm Anzahl je Verpackung: 1 Stücke |
auf Bestellung 570 Stücke: Lieferzeit 7-14 Tag (e) |
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CSD19503KCS | Hersteller : Texas Instruments |
Description: MOSFET N-CH 80V 100A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Rds On (Max) @ Id, Vgs: 9.2mOhm @ 60A, 10V Power Dissipation (Max): 188W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 40 V |
auf Bestellung 858 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD19503KCS | Hersteller : Texas Instruments |
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CSD19503KCS | Hersteller : Texas Instruments |
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Produkt ist nicht verfügbar |
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CSD19503KCS | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 80V 100A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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CSD19503KCS | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 80V 100A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |