| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.46 EUR |
| 10+ | 2.64 EUR |
| 100+ | 1.95 EUR |
| 500+ | 1.65 EUR |
| 1000+ | 1.38 EUR |
| 5000+ | 1.31 EUR |
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Technische Details CSD19503KCS Texas Instruments
Description: TEXAS INSTRUMENTS - CSD19503KCS - Leistungs-MOSFET, n-Kanal, 80 V, 100 A, 0.0076 ohm, TO-220, Durchsteckmontage, Transistormontage: Durchsteckmontage, Drain-Source-Spannung Vds: 80, Dauer-Drainstrom Id: 100, Qualifikation: -, MSL: -, Verlustleistung Pd: 188, Gate-Source-Schwellenspannung, max.: 2.8, Verlustleistung: 188, Bauform - Transistor: TO-220, Qualifizierungsstandard der Automobilindustrie: -, Anzahl der Pins: 3, Produktpalette: -, Wandlerpolarität: n-Kanal, Kanaltyp: n-Kanal, Betriebswiderstand, Rds(on): 0.0076, Rds(on)-Prüfspannung: 10, Betriebstemperatur, max.: 150, Drain-Source-Durchgangswiderstand: 0.0076, SVHC: No SVHC (17-Jan-2022).
Weitere Produktangebote CSD19503KCS nach Preis ab 1.64 EUR bis 4.99 EUR
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CSD19503KCS | Texas Instruments |
 Description: MOSFET N-CH 80V 100A TO220-3Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 3.4V @ 250µA Power Dissipation (Max): 188W (Tc) Rds On (Max) @ Id, Vgs: 9.2mOhm @ 60A, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube FET Type: N-Channel Technology: MOSFET (Metal Oxide) |
auf Bestellung 1050 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD19503KCS | TEXAS INSTRUMENTS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 188W; TO220-3 On-state resistance: 7.6mΩ Mounting: THT Power dissipation: 188W Gate charge: 28nC Polarisation: unipolar Technology: NexFET™ Drain current: 100A Kind of channel: enhancement Drain-source voltage: 80V Heatsink thickness: 1.14...1.4mm Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: TO220-3 |
auf Bestellung 325 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| CSD19503KCS |
|
Hersteller: Texas Instruments
Description: MOSFET N-CH 80V 100A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Power Dissipation (Max): 188W (Tc)
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Description: MOSFET N-CH 80V 100A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Power Dissipation (Max): 188W (Tc)
Rds On (Max) @ Id, Vgs: 9.2mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
auf Bestellung 1050 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.99 EUR |
| 50+ | 2.45 EUR |
| 100+ | 2.21 EUR |
| 500+ | 1.78 EUR |
| 1000+ | 1.64 EUR |
| CSD19503KCS |
|
Hersteller: TEXAS INSTRUMENTS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 188W; TO220-3
On-state resistance: 7.6mΩ
Mounting: THT
Power dissipation: 188W
Gate charge: 28nC
Polarisation: unipolar
Technology: NexFET™
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 80V
Heatsink thickness: 1.14...1.4mm
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220-3
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 188W; TO220-3
On-state resistance: 7.6mΩ
Mounting: THT
Power dissipation: 188W
Gate charge: 28nC
Polarisation: unipolar
Technology: NexFET™
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 80V
Heatsink thickness: 1.14...1.4mm
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220-3
auf Bestellung 325 Stücke:
Lieferzeit 14-21 Tag (e)