Technische Details CSD19531Q5A Texas Instruments
Description: TEXAS INSTRUMENTS - CSD19531Q5A - Leistungs-MOSFET, n-Kanal, 100 V, 100 A, 0.0053 ohm, SON, Oberflächenmontage, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 100, Dauer-Drainstrom Id: 100, Qualifikation: -, MSL: MSL 1 - unbegrenzt, Verlustleistung Pd: 3.3, Gate-Source-Schwellenspannung, max.: 2.7, Verlustleistung: 3.3, Bauform - Transistor: SON, Qualifizierungsstandard der Automobilindustrie: -, Anzahl der Pins: 8, Produktpalette: -, Wandlerpolarität: n-Kanal, Kanaltyp: n-Kanal, Betriebswiderstand, Rds(on): 0.0053, Rds(on)-Prüfspannung: 10, Betriebstemperatur, max.: 150, Drain-Source-Durchgangswiderstand: 0.0053, SVHC: No SVHC (10-Jun-2022).
Weitere Produktangebote CSD19531Q5A nach Preis ab 1.2 EUR bis 6.63 EUR
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CSD19531Q5A | Texas Instruments |
 Description: MOSFET N-CH 100V 100A 8VSONPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 6.4mOhm @ 16A, 10V Power Dissipation (Max): 3.3W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 250µA Supplier Device Package: 8-VSONP (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3870 pF @ 50 V |
auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD19531Q5A | Texas Instruments |
MOSFETs 100V 5.3mOhm Pwr MOS FET A 595-CSD19531Q A 595-CSD19531Q5AT |
auf Bestellung 3263 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD19531Q5A | Texas Instruments |
Description: MOSFET N-CH 100V 100A 8VSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 6.4mOhm @ 16A, 10V Power Dissipation (Max): 3.3W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 250µA Supplier Device Package: 8-VSONP (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3870 pF @ 50 V |
auf Bestellung 9613 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD19531Q5A | Texas Instruments |
Transistor N-Channel MOSFET; 100V; 20V; 7,8mOhm; 110A; 125W; -55°C ~ 150°C; CSD19531Q5AT CSD19531Q5A TCSD19531q5a Anzahl je Verpackung: 5 Stücke |
auf Bestellung 15 Stücke: Lieferzeit 7-14 Tag (e) |
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CSD19531Q5A | Texas Instruments |
Transistor N-Channel MOSFET; 100V; 20V; 7,8mOhm; 110A; 125W; -55°C ~ 150°C; CSD19531Q5AT CSD19531Q5A TCSD19531q5a Anzahl je Verpackung: 5 Stücke |
auf Bestellung 5 Stücke: Lieferzeit 7-14 Tag (e) |
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Hersteller: Texas Instruments
Description: MOSFET N-CH 100V 100A 8VSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 16A, 10V
Power Dissipation (Max): 3.3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Supplier Device Package: 8-VSONP (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3870 pF @ 50 V
Description: MOSFET N-CH 100V 100A 8VSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 16A, 10V
Power Dissipation (Max): 3.3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Supplier Device Package: 8-VSONP (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3870 pF @ 50 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 1.33 EUR |
| 5000+ | 1.25 EUR |
| 7500+ | 1.2 EUR |
| CSD19531Q5A |
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Hersteller: Texas Instruments
MOSFETs 100V 5.3mOhm Pwr MOS FET A 595-CSD19531Q A 595-CSD19531Q5AT
MOSFETs 100V 5.3mOhm Pwr MOS FET A 595-CSD19531Q A 595-CSD19531Q5AT
auf Bestellung 3263 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.19 EUR |
| 10+ | 2.7 EUR |
| 100+ | 1.83 EUR |
| 500+ | 1.46 EUR |
| 1000+ | 1.39 EUR |
| 2500+ | 1.33 EUR |
| CSD19531Q5A |
|
Hersteller: Texas Instruments
Description: MOSFET N-CH 100V 100A 8VSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 16A, 10V
Power Dissipation (Max): 3.3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Supplier Device Package: 8-VSONP (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3870 pF @ 50 V
Description: MOSFET N-CH 100V 100A 8VSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 16A, 10V
Power Dissipation (Max): 3.3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Supplier Device Package: 8-VSONP (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3870 pF @ 50 V
auf Bestellung 9613 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.57 EUR |
| 10+ | 2.94 EUR |
| 100+ | 2 EUR |
| 500+ | 1.59 EUR |
| 1000+ | 1.48 EUR |
| CSD19531Q5A |
|
Hersteller: Texas Instruments
Transistor N-Channel MOSFET; 100V; 20V; 7,8mOhm; 110A; 125W; -55°C ~ 150°C; CSD19531Q5AT CSD19531Q5A TCSD19531q5a
Anzahl je Verpackung: 5 Stücke
Transistor N-Channel MOSFET; 100V; 20V; 7,8mOhm; 110A; 125W; -55°C ~ 150°C; CSD19531Q5AT CSD19531Q5A TCSD19531q5a
Anzahl je Verpackung: 5 Stücke
auf Bestellung 15 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 6.18 EUR |
| CSD19531Q5A |
|
Hersteller: Texas Instruments
Transistor N-Channel MOSFET; 100V; 20V; 7,8mOhm; 110A; 125W; -55°C ~ 150°C; CSD19531Q5AT CSD19531Q5A TCSD19531q5a
Anzahl je Verpackung: 5 Stücke
Transistor N-Channel MOSFET; 100V; 20V; 7,8mOhm; 110A; 125W; -55°C ~ 150°C; CSD19531Q5AT CSD19531Q5A TCSD19531q5a
Anzahl je Verpackung: 5 Stücke
auf Bestellung 5 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 6.63 EUR |