CSD19531Q5A Texas Instruments
Hersteller: Texas InstrumentsDescription: MOSFET N-CH 100V 100A 8VSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 16A, 10V
Power Dissipation (Max): 3.3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Supplier Device Package: 8-VSONP (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3870 pF @ 50 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 1.16 EUR |
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Technische Details CSD19531Q5A Texas Instruments
Description: MOSFET N-CH 100V 100A 8VSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 6.4mOhm @ 16A, 10V, Power Dissipation (Max): 3.3W (Ta), 125W (Tc), Vgs(th) (Max) @ Id: 3.3V @ 250µA, Supplier Device Package: 8-VSONP (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3870 pF @ 50 V.
Weitere Produktangebote CSD19531Q5A nach Preis ab 1.13 EUR bis 5.63 EUR
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Description: MOSFET N-CH 100V 100A 8VSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 6.4mOhm @ 16A, 10V Power Dissipation (Max): 3.3W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 250µA Supplier Device Package: 8-VSONP (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3870 pF @ 50 V |
auf Bestellung 4253 Stücke: Lieferzeit 10-14 Tag (e) |
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Transistor N-Channel MOSFET; 100V; 20V; 7,8mOhm; 110A; 125W; -55°C ~ 150°C; CSD19531Q5AT CSD19531Q5A TCSD19531q5a Anzahl je Verpackung: 5 Stücke |
auf Bestellung 15 Stücke: Lieferzeit 7-14 Tag (e) |
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| CSD19531Q5A | Hersteller : Texas Instruments |
Transistor N-Channel MOSFET; 100V; 20V; 7,8mOhm; 110A; 125W; -55°C ~ 150°C; CSD19531Q5AT CSD19531Q5A TCSD19531q5a Anzahl je Verpackung: 5 Stücke |
auf Bestellung 5 Stücke: Lieferzeit 7-14 Tag (e) |
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CSD19531Q5A | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 100V 100A 8-Pin VSONP EP T/R |
Produkt ist nicht verfügbar |
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CSD19531Q5A | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 100V 100A 8-Pin VSONP EP T/R |
Produkt ist nicht verfügbar |