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CSD19532KTTT

CSD19532KTTT Texas Instruments

suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19532ktt Hersteller: Texas Instruments
Description: MOSFET N-CH 100V 200A DDPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 90A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 250µA
Supplier Device Package: TO-263 (DDPAK-3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5060 pF @ 50 V
auf Bestellung 7650 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
50+2.11 EUR
100+2.05 EUR
150+2.04 EUR
250+1.99 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details CSD19532KTTT Texas Instruments

Description: MOSFET N-CH 100V 200A DDPAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 200A (Ta), Rds On (Max) @ Id, Vgs: 5.6mOhm @ 90A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 3.2V @ 250µA, Supplier Device Package: TO-263 (DDPAK-3), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5060 pF @ 50 V.

Weitere Produktangebote CSD19532KTTT nach Preis ab 2.12 EUR bis 3.19 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
CSD19532KTTT CSD19532KTTT Hersteller : Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19532ktt MOSFETs 100V N-channel NexF ET Pwr MOSFET A 595-CSD19532KTT
auf Bestellung 17621 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.01 EUR
10+2.64 EUR
50+2.25 EUR
100+2.24 EUR
Im Einkaufswagen  Stück im Wert von  UAH
CSD19532KTTT CSD19532KTTT Hersteller : Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19532ktt Description: MOSFET N-CH 100V 200A DDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 90A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 250µA
Supplier Device Package: TO-263 (DDPAK-3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5060 pF @ 50 V
auf Bestellung 7651 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.01 EUR
10+2.56 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
CSD19532KTTT CSD19532KTTT Hersteller : TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19532ktt Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; Idm: 400A; 250W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 250W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Drain current: 200A
On-state resistance: 6.6mΩ
Gate charge: 44nC
Technology: NexFET™
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 400A
Drain-source voltage: 100V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 193 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
23+3.19 EUR
25+2.93 EUR
31+2.33 EUR
33+2.20 EUR
50+2.12 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
CSD19532KTTT CSD19532KTTT Hersteller : TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19532ktt Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; Idm: 400A; 250W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 250W
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Drain current: 200A
On-state resistance: 6.6mΩ
Gate charge: 44nC
Technology: NexFET™
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 400A
Drain-source voltage: 100V
auf Bestellung 193 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.19 EUR
25+2.93 EUR
31+2.33 EUR
33+2.20 EUR
50+2.12 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
CSD19532KTTT CSD19532KTTT Hersteller : Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19532ktt Trans MOSFET N-CH Si 100V 200A 3-Pin(2+Tab) DDPAK T/R
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
CSD19532KTTT CSD19532KTTT Hersteller : Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19532ktt Trans MOSFET N-CH Si 100V 200A 3-Pin(2+Tab) DDPAK T/R
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CSD19532KTTT CSD19532KTTT Hersteller : Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19532ktt Trans MOSFET N-CH Si 100V 200A 3-Pin(2+Tab) DDPAK T/R
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CSD19532KTTT CSD19532KTTT Hersteller : Texas Instruments getliterature.pdf Trans MOSFET N-CH Si 100V 200A 4-Pin(3+Tab) DDPAK T/R
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