CSD19532KTTT TEXAS INSTRUMENTS
Hersteller: TEXAS INSTRUMENTSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; Idm: 400A; 250W; D2PAK
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Pulsed drain current: 400A
Power dissipation: 250W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 6.6mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 176 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 32+ | 2.25 EUR |
| 34+ | 2.13 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details CSD19532KTTT TEXAS INSTRUMENTS
Description: MOSFET N-CH 100V 200A DDPAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 200A (Ta), Rds On (Max) @ Id, Vgs: 5.6mOhm @ 90A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 3.2V @ 250µA, Supplier Device Package: TO-263 (DDPAK-3), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5060 pF @ 50 V.
Weitere Produktangebote CSD19532KTTT nach Preis ab 2.04 EUR bis 6.05 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
CSD19532KTTT | Hersteller : TEXAS INSTRUMENTS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 200A; Idm: 400A; 250W; D2PAK Type of transistor: N-MOSFET Technology: NexFET™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 200A Pulsed drain current: 400A Power dissipation: 250W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 6.6mΩ Mounting: SMD Gate charge: 44nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 176 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
|
CSD19532KTTT | Hersteller : Texas Instruments |
MOSFETs 100V N-channel NexF ET Pwr MOSFET A 595-CSD19532KTT |
auf Bestellung 14753 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||
|
CSD19532KTTT | Hersteller : Texas Instruments |
Description: MOSFET N-CH 100V 200A DDPAKPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Ta) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 90A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 3.2V @ 250µA Supplier Device Package: TO-263 (DDPAK-3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5060 pF @ 50 V |
auf Bestellung 6600 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||
|
CSD19532KTTT | Hersteller : Texas Instruments |
Description: MOSFET N-CH 100V 200A DDPAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Ta) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 90A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 3.2V @ 250µA Supplier Device Package: TO-263 (DDPAK-3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5060 pF @ 50 V |
auf Bestellung 6634 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||
|
CSD19532KTTT | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 100V 200A 3-Pin(2+Tab) DDPAK T/R |
auf Bestellung 9 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||||||||
|
CSD19532KTTT | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 100V 200A 3-Pin(2+Tab) DDPAK T/R |
auf Bestellung 9 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||||||||
|
CSD19532KTTT | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 100V 200A 3-Pin(2+Tab) DDPAK T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||||
|
CSD19532KTTT | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 100V 200A 3-Pin(2+Tab) DDPAK T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||||
|
|
CSD19532KTTT | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 100V 200A 4-Pin(3+Tab) DDPAK T/R |
Produkt ist nicht verfügbar |


