CSD19532KTTT Texas Instruments
auf Bestellung 14753 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.64 EUR |
| 10+ | 2.11 EUR |
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Technische Details CSD19532KTTT Texas Instruments
Description: MOSFET N-CH 100V 200A DDPAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 200A (Ta), Rds On (Max) @ Id, Vgs: 5.6mOhm @ 90A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 3.2V @ 250µA, Supplier Device Package: TO-263 (DDPAK-3), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5060 pF @ 50 V.
Weitere Produktangebote CSD19532KTTT nach Preis ab 2.04 EUR bis 6.05 EUR
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CSD19532KTTT | Hersteller : Texas Instruments |
 Description: MOSFET N-CH 100V 200A DDPAKPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Ta) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 90A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 3.2V @ 250µA Supplier Device Package: TO-263 (DDPAK-3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5060 pF @ 50 V |
auf Bestellung 6600 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD19532KTTT | Hersteller : Texas Instruments |
Description: MOSFET N-CH 100V 200A DDPAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Ta) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 90A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 3.2V @ 250µA Supplier Device Package: TO-263 (DDPAK-3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5060 pF @ 50 V |
auf Bestellung 6634 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD19532KTTT | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 100V 200A 3-Pin(2+Tab) DDPAK T/R |
auf Bestellung 9 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD19532KTTT | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 100V 200A 3-Pin(2+Tab) DDPAK T/R |
auf Bestellung 9 Stücke: Lieferzeit 14-21 Tag (e) |
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| CSD19532KTTT | Hersteller : TEXAS INSTRUMENTS |
CSD19532KTTT SMD N channel transistors |
auf Bestellung 169 Stücke: Lieferzeit 7-14 Tag (e) |
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CSD19532KTTT | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 100V 200A 3-Pin(2+Tab) DDPAK T/R |
Produkt ist nicht verfügbar |
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CSD19532KTTT | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 100V 200A 3-Pin(2+Tab) DDPAK T/R |
Produkt ist nicht verfügbar |
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CSD19532KTTT | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 100V 200A 4-Pin(3+Tab) DDPAK T/R |
Produkt ist nicht verfügbar |