Weitere Produktangebote CSD19533KCS Транзистор nach Preis ab 1.15 EUR bis 4.56 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
CSD19533KCS | Texas Instruments |
Description: MOSFET N-CH 100V 100A TO220-3Input Capacitance (Ciss) (Max) @ Vds: 2670 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Power Dissipation (Max): 188W (Tc) Rds On (Max) @ Id, Vgs: 10.5mOhm @ 55A, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 3.4V @ 250µA |
auf Bestellung 2410 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
CSD19533KCS | Texas Instruments |
MOSFETs 100V 8.7mOhm N-CH Pw r MOSFET |
auf Bestellung 1809 Stücke: Lieferzeit 10-14 Tag (e) |
|
| CSD19533KCS |
![]() |
Hersteller: Texas Instruments
Description: MOSFET N-CH 100V 100A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 2670 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Power Dissipation (Max): 188W (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 55A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Description: MOSFET N-CH 100V 100A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 2670 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Power Dissipation (Max): 188W (Tc)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 55A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 3.4V @ 250µA
auf Bestellung 2410 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 3.82 EUR |
| 50+ | 1.87 EUR |
| 100+ | 1.68 EUR |
| 500+ | 1.35 EUR |
| 1000+ | 1.24 EUR |
| 2000+ | 1.15 EUR |
| CSD19533KCS |
![]() |
Hersteller: Texas Instruments
MOSFETs 100V 8.7mOhm N-CH Pw r MOSFET
MOSFETs 100V 8.7mOhm N-CH Pw r MOSFET
auf Bestellung 1809 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 4.56 EUR |
| 10+ | 2.96 EUR |
| 100+ | 2.16 EUR |
| 500+ | 1.81 EUR |
| 1000+ | 1.56 EUR |
| 2500+ | 1.48 EUR |


