
CSD19533KCS Texas Instruments
auf Bestellung 16000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis |
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1000+ | 1 EUR |
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Technische Details CSD19533KCS Texas Instruments
Description: MOSFET N-CH 100V 100A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Ta), Rds On (Max) @ Id, Vgs: 10.5mOhm @ 55A, 10V, Power Dissipation (Max): 188W (Tc), Vgs(th) (Max) @ Id: 3.4V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2670 pF @ 50 V.
Weitere Produktangebote CSD19533KCS nach Preis ab 1.13 EUR bis 2.92 EUR
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CSD19533KCS | Hersteller : TEXAS INSTRUMENTS |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 188W; TO220-3 Case: TO220-3 Type of transistor: N-MOSFET Mounting: THT Polarisation: unipolar Drain-source voltage: 100V Gate-source voltage: ±20V Drain current: 100A Gate charge: 27nC Heatsink thickness: 1.14...1.4mm On-state resistance: 8.7mΩ Power dissipation: 188W Kind of package: tube Technology: NexFET™ Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 117 Stücke: Lieferzeit 7-14 Tag (e) |
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CSD19533KCS | Hersteller : TEXAS INSTRUMENTS |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 188W; TO220-3 Case: TO220-3 Type of transistor: N-MOSFET Mounting: THT Polarisation: unipolar Drain-source voltage: 100V Gate-source voltage: ±20V Drain current: 100A Gate charge: 27nC Heatsink thickness: 1.14...1.4mm On-state resistance: 8.7mΩ Power dissipation: 188W Kind of package: tube Technology: NexFET™ Kind of channel: enhancement |
auf Bestellung 117 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD19533KCS | Hersteller : Texas Instruments |
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auf Bestellung 1889 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD19533KCS | Hersteller : Texas Instruments |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Rds On (Max) @ Id, Vgs: 10.5mOhm @ 55A, 10V Power Dissipation (Max): 188W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2670 pF @ 50 V |
auf Bestellung 1057 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD19533KCS | Hersteller : Texas Instruments |
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auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD19533KCS | Hersteller : Texas Instruments |
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auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD19533KCS | Hersteller : Texas Instruments |
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auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD19533KCS Транзистор Produktcode: 195368
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CSD19533KCS | Hersteller : Texas Instruments |
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CSD19533KCS | Hersteller : Texas Instruments |
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Produkt ist nicht verfügbar |