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CSD19533Q5AT Texas Instruments


suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19533q5a
Hersteller: Texas Instruments
Trans MOSFET N-CH Si 100V 100A 8-Pin VSONP EP T/R
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
250+1.2 EUR
Mindestbestellmenge: 250 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details CSD19533Q5AT Texas Instruments

Description: MOSFET N-CH 100V 100A 8VSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Ta), Rds On (Max) @ Id, Vgs: 9.4mOhm @ 13A, 10V, Power Dissipation (Max): 3.2W (Ta), 96W (Tc), Vgs(th) (Max) @ Id: 3.4V @ 250µA, Supplier Device Package: 8-VSONP (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2670 pF @ 50 V.

Weitere Produktangebote CSD19533Q5AT nach Preis ab 1.2 EUR bis 5.46 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
CSD19533Q5AT CSD19533Q5AT Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19533q5a Trans MOSFET N-CH Si 100V 100A 8-Pin VSONP EP T/R
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)
250+1.2 EUR
Mindestbestellmenge: 250 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CSD19533Q5AT CSD19533Q5AT Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19533q5a Description: MOSFET N-CH 100V 100A 8VSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 13A, 10V
Power Dissipation (Max): 3.2W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Supplier Device Package: 8-VSONP (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2670 pF @ 50 V
auf Bestellung 250 Stücke:
Lieferzeit 10-14 Tag (e)
250+1.68 EUR
Mindestbestellmenge: 250 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CSD19533Q5AT CSD19533Q5AT TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19533q5a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 96W; VSONP8; 5x6mm
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 96W
Case: VSONP8
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhancement
Dimensions: 5x6mm
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
25+3.4 EUR
Mindestbestellmenge: 25 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CSD19533Q5AT CSD19533Q5AT Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19533q5a Description: MOSFET N-CH 100V 100A 8VSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 13A, 10V
Power Dissipation (Max): 3.2W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Supplier Device Package: 8-VSONP (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2670 pF @ 50 V
auf Bestellung 513 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.24 EUR
10+2.82 EUR
100+2.03 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CSD19533Q5AT CSD19533Q5AT Texas Instruments TexasInstruments.pdf Transistor N-Channel MOSFET; 100V; 20V; 11,1mOhm; 100A; 96W; -55°C ~ 150°C; CSD19533Q5AT CSD19533Q5A TCSD19533q5a
Anzahl je Verpackung: 10 Stücke
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)
10+4.31 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CSD19533Q5AT CSD19533Q5AT Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19533q5a MOSFETs 100V 7.8mOhm SON5x6 N-ch NexFET A 595-CSD19533Q5A
auf Bestellung 592 Stücke:
Lieferzeit 10-14 Tag (e)
1+5.46 EUR
10+3.53 EUR
100+2.62 EUR
500+2.18 EUR
1000+1.87 EUR
2500+1.78 EUR
Im Einkaufswagen  Stück im Wert von  UAH
CSD19533Q5AT suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19533q5a
Hersteller: Texas Instruments
Trans MOSFET N-CH Si 100V 100A 8-Pin VSONP EP T/R
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
250+1.2 EUR
Mindestbestellmenge: 250 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CSD19533Q5AT suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19533q5a
Hersteller: Texas Instruments
Description: MOSFET N-CH 100V 100A 8VSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 13A, 10V
Power Dissipation (Max): 3.2W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Supplier Device Package: 8-VSONP (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2670 pF @ 50 V
auf Bestellung 250 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
250+1.68 EUR
Mindestbestellmenge: 250 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CSD19533Q5AT suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19533q5a
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 96W; VSONP8; 5x6mm
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 96W
Case: VSONP8
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhancement
Dimensions: 5x6mm
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
25+3.4 EUR
Mindestbestellmenge: 25 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CSD19533Q5AT suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19533q5a
Hersteller: Texas Instruments
Description: MOSFET N-CH 100V 100A 8VSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 13A, 10V
Power Dissipation (Max): 3.2W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Supplier Device Package: 8-VSONP (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2670 pF @ 50 V
auf Bestellung 513 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.24 EUR
10+2.82 EUR
100+2.03 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CSD19533Q5AT TexasInstruments.pdf
Hersteller: Texas Instruments
Transistor N-Channel MOSFET; 100V; 20V; 11,1mOhm; 100A; 96W; -55°C ~ 150°C; CSD19533Q5AT CSD19533Q5A TCSD19533q5a
Anzahl je Verpackung: 10 Stücke
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)
AnzahlPrivatkunde
10+4.31 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
CSD19533Q5AT suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19533q5a
Hersteller: Texas Instruments
MOSFETs 100V 7.8mOhm SON5x6 N-ch NexFET A 595-CSD19533Q5A
auf Bestellung 592 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+5.46 EUR
10+3.53 EUR
100+2.62 EUR
500+2.18 EUR
1000+1.87 EUR
2500+1.78 EUR
Im Einkaufswagen  Stück im Wert von  UAH