CSD19533Q5AT Texas Instruments
auf Bestellung 250 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 250+ | 1.47 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details CSD19533Q5AT Texas Instruments
Description: MOSFET N-CH 100V 100A 8VSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Ta), Rds On (Max) @ Id, Vgs: 9.4mOhm @ 13A, 10V, Power Dissipation (Max): 3.2W (Ta), 96W (Tc), Vgs(th) (Max) @ Id: 3.4V @ 250µA, Supplier Device Package: 8-VSONP (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2670 pF @ 50 V.
Weitere Produktangebote CSD19533Q5AT nach Preis ab 1.19 EUR bis 5.68 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
CSD19533Q5AT | Hersteller : Texas Instruments |
 Description: MOSFET N-CH 100V 100A 8VSONPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Rds On (Max) @ Id, Vgs: 9.4mOhm @ 13A, 10V Power Dissipation (Max): 3.2W (Ta), 96W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 250µA Supplier Device Package: 8-VSONP (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2670 pF @ 50 V |
auf Bestellung 500 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
CSD19533Q5AT | Hersteller : TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 96W; VSONP8; 5x6mm Mounting: SMD Dimensions: 5x6mm Case: VSONP8 Power dissipation: 96W Kind of package: reel; tape On-state resistance: 7.8mΩ Gate charge: 27nC Type of transistor: N-MOSFET Technology: NexFET™ Drain current: 100A Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
auf Bestellung 396 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||||
|
|
CSD19533Q5AT | Hersteller : TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 96W; VSONP8; 5x6mm Mounting: SMD Dimensions: 5x6mm Case: VSONP8 Power dissipation: 96W Kind of package: reel; tape On-state resistance: 7.8mΩ Gate charge: 27nC Type of transistor: N-MOSFET Technology: NexFET™ Drain current: 100A Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Polarisation: unipolar |
auf Bestellung 396 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
|
|
CSD19533Q5AT | Hersteller : Texas Instruments |
Description: MOSFET N-CH 100V 100A 8VSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Ta) Rds On (Max) @ Id, Vgs: 9.4mOhm @ 13A, 10V Power Dissipation (Max): 3.2W (Ta), 96W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 250µA Supplier Device Package: 8-VSONP (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2670 pF @ 50 V |
auf Bestellung 651 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
CSD19533Q5AT | Hersteller : Texas Instruments |
MOSFET 100V, 7.8mOhm SON5x6 N-ch NexFET |
auf Bestellung 1423 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
| CSD19533Q5AT | Hersteller : Texas Instruments |
Transistor N-Channel MOSFET; 100V; 20V; 11,1mOhm; 100A; 96W; -55°C ~ 150°C; CSD19533Q5AT CSD19533Q5A TCSD19533q5a Anzahl je Verpackung: 5 Stücke |
auf Bestellung 20 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||||
|
|
CSD19533Q5AT | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 100V 100A 8-Pin VSONP EP T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||
|
|
CSD19533Q5AT | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 100V 100A 8-Pin VSONP EP T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||
 |
CSD19533Q5AT | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 100V 100A 8-Pin VSONP EP T/R |
Produkt ist nicht verfügbar |