CSD19534Q5A Texas Instruments
Hersteller: Texas Instruments
Description: MOSFET N-CH 100V 50A 8VSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 15.1mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Supplier Device Package: 8-VSONP (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 50 V
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Technische Details CSD19534Q5A Texas Instruments
Description: MOSFET N-CH 100V 50A 8VSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 44A (Tc), Rds On (Max) @ Id, Vgs: 15.1mOhm @ 10A, 10V, Power Dissipation (Max): 3.2W (Ta), 63W (Tc), Vgs(th) (Max) @ Id: 3.4V @ 250µA, Supplier Device Package: 8-VSONP (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 50 V.
Weitere Produktangebote CSD19534Q5A nach Preis ab 0.59 EUR bis 2.36 EUR
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CSD19534Q5A | TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 50A; 63W; VSONP8; 5x6mm Type of transistor: N-MOSFET Technology: NexFET™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 50A Power dissipation: 63W Case: VSONP8 Gate-source voltage: ±20V On-state resistance: 12.6mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 17nC Dimensions: 5x6mm |
auf Bestellung 2386 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD19534Q5A | Texas Instruments |
MOSFETs N-Channel MOSFET A 5 95-CSD19534Q5AT A 5 A 595-CSD19534Q5AT |
auf Bestellung 364 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD19534Q5A | Texas Instruments |
Description: MOSFET N-CH 100V 50A 8VSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Rds On (Max) @ Id, Vgs: 15.1mOhm @ 10A, 10V Power Dissipation (Max): 3.2W (Ta), 63W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 250µA Supplier Device Package: 8-VSONP (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 50 V |
auf Bestellung 61627 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD19534Q5A |
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Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 50A; 63W; VSONP8; 5x6mm
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50A
Power dissipation: 63W
Case: VSONP8
Gate-source voltage: ±20V
On-state resistance: 12.6mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 17nC
Dimensions: 5x6mm
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 50A; 63W; VSONP8; 5x6mm
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50A
Power dissipation: 63W
Case: VSONP8
Gate-source voltage: ±20V
On-state resistance: 12.6mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 17nC
Dimensions: 5x6mm
auf Bestellung 2386 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 80+ | 0.9 EUR |
| CSD19534Q5A |
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Hersteller: Texas Instruments
MOSFETs N-Channel MOSFET A 5 95-CSD19534Q5AT A 5 A 595-CSD19534Q5AT
MOSFETs N-Channel MOSFET A 5 95-CSD19534Q5AT A 5 A 595-CSD19534Q5AT
auf Bestellung 364 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.22 EUR |
| 10+ | 1.41 EUR |
| 100+ | 0.93 EUR |
| 500+ | 0.73 EUR |
| 1000+ | 0.67 EUR |
| 2500+ | 0.6 EUR |
| 5000+ | 0.59 EUR |
| CSD19534Q5A |
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Hersteller: Texas Instruments
Description: MOSFET N-CH 100V 50A 8VSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 15.1mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Supplier Device Package: 8-VSONP (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 50 V
Description: MOSFET N-CH 100V 50A 8VSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 15.1mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Supplier Device Package: 8-VSONP (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 50 V
auf Bestellung 61627 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 8+ | 2.36 EUR |
| 12+ | 1.49 EUR |
| 100+ | 0.99 EUR |
| 500+ | 0.77 EUR |
| 1000+ | 0.71 EUR |