CSD19534Q5A Texas Instruments
Hersteller: Texas Instruments
Description: MOSFET N-CH 100V 50A 8VSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 15.1mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Supplier Device Package: 8-VSONP (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 50 V
Description: MOSFET N-CH 100V 50A 8VSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 15.1mOhm @ 10A, 10V
Power Dissipation (Max): 3.2W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Supplier Device Package: 8-VSONP (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 50 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.69 EUR |
5000+ | 0.66 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details CSD19534Q5A Texas Instruments
Description: MOSFET N-CH 100V 50A 8VSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 44A (Tc), Rds On (Max) @ Id, Vgs: 15.1mOhm @ 10A, 10V, Power Dissipation (Max): 3.2W (Ta), 63W (Tc), Vgs(th) (Max) @ Id: 3.4V @ 250µA, Supplier Device Package: 8-VSONP (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 50 V.
Weitere Produktangebote CSD19534Q5A nach Preis ab 0.48 EUR bis 1.67 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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CSD19534Q5A | Hersteller : TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 50A; 63W; VSONP8; 5x6mm Mounting: SMD Dimensions: 5x6mm Case: VSONP8 Power dissipation: 63W Kind of package: reel; tape On-state resistance: 12.6mΩ Gate charge: 17nC Type of transistor: N-MOSFET Technology: NexFET™ Drain current: 50A Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1021 Stücke: Lieferzeit 7-14 Tag (e) |
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CSD19534Q5A | Hersteller : TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 50A; 63W; VSONP8; 5x6mm Mounting: SMD Dimensions: 5x6mm Case: VSONP8 Power dissipation: 63W Kind of package: reel; tape On-state resistance: 12.6mΩ Gate charge: 17nC Type of transistor: N-MOSFET Technology: NexFET™ Drain current: 50A Drain-source voltage: 100V Kind of channel: enhanced Gate-source voltage: ±20V Polarisation: unipolar |
auf Bestellung 1021 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD19534Q5A | Hersteller : Texas Instruments | Trans MOSFET N-CH Si 100V 50A 8-Pin VSONP EP T/R |
auf Bestellung 2250 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD19534Q5A | Hersteller : Texas Instruments | MOSFET N-Channel MOSFET |
auf Bestellung 25303 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD19534Q5A | Hersteller : Texas Instruments |
Description: MOSFET N-CH 100V 50A 8VSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Rds On (Max) @ Id, Vgs: 15.1mOhm @ 10A, 10V Power Dissipation (Max): 3.2W (Ta), 63W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 250µA Supplier Device Package: 8-VSONP (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 50 V |
auf Bestellung 12524 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD19534Q5A | Hersteller : Texas Instruments | Trans MOSFET N-CH Si 100V 50A 8-Pin VSONP EP T/R |
Produkt ist nicht verfügbar |
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CSD19534Q5A | Hersteller : Texas Instruments | Trans MOSFET N-CH Si 100V 50A 8-Pin VSONP EP T/R |
Produkt ist nicht verfügbar |
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CSD19534Q5A | Hersteller : Texas Instruments | Trans MOSFET N-CH Si 100V 50A 8-Pin VSONP EP T/R |
Produkt ist nicht verfügbar |