CSD19535KCS Texas Instruments
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 54+ | 2.91 EUR |
| 100+ | 2.52 EUR |
| 250+ | 2.4 EUR |
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Technische Details CSD19535KCS Texas Instruments
Description: MOSFET N-CH 100V 150A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 150A (Ta), Rds On (Max) @ Id, Vgs: 3.6mOhm @ 100A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 3.4V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7930 pF @ 50 V.
Weitere Produktangebote CSD19535KCS nach Preis ab 2.77 EUR bis 8.85 EUR
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CSD19535KCS | Hersteller : TEXAS INSTRUMENTS |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 150A; 300W; TO220-3 Type of transistor: N-MOSFET Technology: NexFET™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 150A Power dissipation: 300W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 3.1mΩ Mounting: THT Gate charge: 78nC Kind of package: tube Kind of channel: enhanced Heatsink thickness: 1.14...1.4mm Anzahl je Verpackung: 1 Stücke |
auf Bestellung 144 Stücke: Lieferzeit 7-14 Tag (e) |
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CSD19535KCS | Hersteller : TEXAS INSTRUMENTS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 150A; 300W; TO220-3 Type of transistor: N-MOSFET Technology: NexFET™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 150A Power dissipation: 300W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 3.1mΩ Mounting: THT Gate charge: 78nC Kind of package: tube Kind of channel: enhanced Heatsink thickness: 1.14...1.4mm |
auf Bestellung 144 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD19535KCS | Hersteller : Texas Instruments |
MOSFET 100V N-CH NexFET Pwr MOSFET |
auf Bestellung 654 Stücke: Lieferzeit 14-28 Tag (e) |
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CSD19535KCS | Hersteller : Texas Instruments |
Description: MOSFET N-CH 100V 150A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Ta) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 100A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7930 pF @ 50 V |
auf Bestellung 739 Stücke: Lieferzeit 21-28 Tag (e) |
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CSD19535KCS | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 100V 150A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 300 Stücke: Lieferzeit 14-21 Tag (e) |
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| CSD19535KCS | Hersteller : Texas Instruments |
Транзистор польовий потужний MOSFET, N-Ch, TO-220; 100 В; 133 A; 0.0031 Ohm; Pd=300W |
auf Bestellung 234 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD19535KCS | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 100V 150A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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CSD19535KCS | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 100V 150A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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CSD19535KCS | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 100V 150A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |