| Anzahl | Preis |
|---|---|
| 1+ | 6.46 EUR |
| 10+ | 3.56 EUR |
| 100+ | 3.06 EUR |
| 500+ | 2.71 EUR |
| 1000+ | 2.5 EUR |
| 2500+ | 2.32 EUR |
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Technische Details CSD19535KCS Texas Instruments
Description: MOSFET N-CH 100V 150A TO220-3, Input Capacitance (Ciss) (Max) @ Vds: 7930 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Part Status: Active, Supplier Device Package: TO-220-3, Vgs(th) (Max) @ Id: 3.4V @ 250µA, Power Dissipation (Max): 300W (Tc), Rds On (Max) @ Id, Vgs: 3.6mOhm @ 100A, 10V, Current - Continuous Drain (Id) @ 25°C: 150A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.
Weitere Produktangebote CSD19535KCS nach Preis ab 2.45 EUR bis 6.92 EUR
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CSD19535KCS | Texas Instruments |
 Description: MOSFET N-CH 100V 150A TO220-3Input Capacitance (Ciss) (Max) @ Vds: 7930 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 3.4V @ 250µA Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 100A, 10V Current - Continuous Drain (Id) @ 25°C: 150A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
auf Bestellung 4231 Stücke: Lieferzeit 10-14 Tag (e) |
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| CSD19535KCS |
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Hersteller: Texas Instruments
Description: MOSFET N-CH 100V 150A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 7930 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 150A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 100V 150A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 7930 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 150A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 4231 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 6.92 EUR |
| 50+ | 3.56 EUR |
| 100+ | 3.23 EUR |
| 500+ | 2.67 EUR |
| 1000+ | 2.48 EUR |
| 2000+ | 2.45 EUR |