| Anzahl | Privatkunde |
|---|---|
| 1+ | 8.44 EUR |
| 10+ | 4.8 EUR |
| 100+ | 4.05 EUR |
| 500+ | 3.36 EUR |
| 1000+ | 3.12 EUR |
| 2500+ | 3.01 EUR |
| 5000+ | 2.87 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Produktrezensionen
Produktbewertung abgeben
Technische Details CSD19535KCS Texas Instruments
Description: TEXAS INSTRUMENTS - CSD19535KCS - Leistungs-MOSFET, n-Kanal, 100 V, 150 A, 0.0031 ohm, TO-220, Durchsteckmontage, Transistormontage: Durchsteckmontage, Drain-Source-Spannung Vds: 100, Dauer-Drainstrom Id: 150, Qualifikation: -, MSL: -, Verlustleistung Pd: 300, Gate-Source-Schwellenspannung, max.: 2.7, Verlustleistung: 300, Bauform - Transistor: TO-220, Qualifizierungsstandard der Automobilindustrie: -, Anzahl der Pins: 3, Produktpalette: -, Wandlerpolarität: n-Kanal, Kanaltyp: n-Kanal, Betriebswiderstand, Rds(on): 0.0031, Rds(on)-Prüfspannung: 10, Betriebstemperatur, max.: 175, Drain-Source-Durchgangswiderstand: 0.0031, SVHC: No SVHC (17-Jan-2022).
Weitere Produktangebote CSD19535KCS nach Preis ab 3.64 EUR bis 9.45 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
CSD19535KCS | Texas Instruments |
 Description: MOSFET N-CH 100V 150A TO220-3Input Capacitance (Ciss) (Max) @ Vds: 7930 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 3.4V @ 250µA Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 100A, 10V Current - Continuous Drain (Id) @ 25°C: 150A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
auf Bestellung 2670 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
 |
CSD19535KCS | TEXAS INSTRUMENTS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 150A; 300W; TO220-3 Type of transistor: N-MOSFET Technology: NexFET™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 150A Power dissipation: 300W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 3.1mΩ Mounting: THT Gate charge: 78nC Kind of package: tube Kind of channel: enhancement Heatsink thickness: 1.14...1.4mm |
auf Bestellung 389 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| CSD19535KCS |
|
Hersteller: Texas Instruments
Description: MOSFET N-CH 100V 150A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 7930 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 150A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 100V 150A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 7930 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 150A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 2670 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 9.45 EUR |
| 10+ | 6.24 EUR |
| 50+ | 4.87 EUR |
| 100+ | 4.41 EUR |
| 500+ | 3.64 EUR |
| CSD19535KCS |
|
Hersteller: TEXAS INSTRUMENTS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 150A; 300W; TO220-3
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 150A
Power dissipation: 300W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.14...1.4mm
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 150A; 300W; TO220-3
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 150A
Power dissipation: 300W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.14...1.4mm
auf Bestellung 389 Stücke:
Lieferzeit 14-21 Tag (e)