CSD19535KCS TEXAS INSTRUMENTS
Hersteller: TEXAS INSTRUMENTSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 150A; 300W; TO220-3
Case: TO220-3
Kind of channel: enhancement
Mounting: THT
Kind of package: tube
Technology: NexFET™
Type of transistor: N-MOSFET
Gate charge: 78nC
Heatsink thickness: 1.14...1.4mm
On-state resistance: 3.1mΩ
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 150A
Power dissipation: 300W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
auf Bestellung 543 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 14+ | 5.33 EUR |
| 25+ | 2.86 EUR |
| 27+ | 2.7 EUR |
| 500+ | 2.62 EUR |
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Technische Details CSD19535KCS TEXAS INSTRUMENTS
Description: MOSFET N-CH 100V 150A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 150A (Ta), Rds On (Max) @ Id, Vgs: 3.6mOhm @ 100A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 3.4V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7930 pF @ 50 V.
Weitere Produktangebote CSD19535KCS nach Preis ab 2.43 EUR bis 8.17 EUR
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CSD19535KCS | Hersteller : TEXAS INSTRUMENTS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 150A; 300W; TO220-3 Case: TO220-3 Kind of channel: enhancement Mounting: THT Kind of package: tube Technology: NexFET™ Type of transistor: N-MOSFET Gate charge: 78nC Heatsink thickness: 1.14...1.4mm On-state resistance: 3.1mΩ Gate-source voltage: ±20V Drain-source voltage: 100V Drain current: 150A Power dissipation: 300W Polarisation: unipolar |
auf Bestellung 543 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD19535KCS | Hersteller : Texas Instruments |
Description: MOSFET N-CH 100V 150A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Ta) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 100A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7930 pF @ 50 V |
auf Bestellung 4329 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD19535KCS | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 100V 150A 3-Pin(3+Tab) TO-220 Tube |
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CSD19535KCS | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 100V 150A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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CSD19535KCS | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 100V 150A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |