CSD19535KTT Texas Instruments
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 500+ | 2.25 EUR |
| 1000+ | 2.00 EUR |
| 2500+ | 1.87 EUR |
| 5000+ | 1.76 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details CSD19535KTT Texas Instruments
Description: MOSFET N-CH 100V 200A DDPAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 200A (Ta), Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 3.4V @ 250µA, Supplier Device Package: TO-263 (DDPAK-3), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7930 pF @ 50 V.
Weitere Produktangebote CSD19535KTT nach Preis ab 2.43 EUR bis 5.86 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
CSD19535KTT | Hersteller : Texas Instruments |
 MOSFETs 100-V N channel Nex FET power MOSFET s A 595-CSD19535KTTT |
auf Bestellung 708 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
 |
CSD19535KTT | Hersteller : Texas Instruments |
Description: MOSFET N-CH 100V 200A DDPAK Packaging: Cut Tape (CT) Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Ta) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 250µA Supplier Device Package: TO-263 (DDPAK-3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7930 pF @ 50 V |
auf Bestellung 414 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
 |
CSD19535KTT | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 100V 200A 4-Pin(3+Tab) DDPAK T/R |
Produkt ist nicht verfügbar |
|||||||||||||
|
|
CSD19535KTT | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 100V 200A 3-Pin(2+Tab) DDPAK T/R |
Produkt ist nicht verfügbar |
|||||||||||||
|
|
CSD19535KTT | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 100V 200A 3-Pin(2+Tab) DDPAK T/R |
Produkt ist nicht verfügbar |
|||||||||||||
|
|
CSD19535KTT | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 100V 200A 3-Pin(2+Tab) DDPAK T/R |
Produkt ist nicht verfügbar |
|||||||||||||
| CSD19535KTT | Hersteller : TEXAS INSTRUMENTS |
CSD19535KTT SMD N channel transistors |
Produkt ist nicht verfügbar |
||||||||||||||
|
|
CSD19535KTT | Hersteller : Texas Instruments |
Description: MOSFET N-CH 100V 200A DDPAK Packaging: Tape & Reel (TR) Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Ta) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 250µA Supplier Device Package: TO-263 (DDPAK-3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7930 pF @ 50 V |
Produkt ist nicht verfügbar |