CSD19535KTT Texas Instruments
Hersteller: Texas Instruments
Description: MOSFET N-CH 100V 200A DDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Supplier Device Package: TO-263 (DDPAK-3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7930 pF @ 50 V
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Technische Details CSD19535KTT Texas Instruments
Description: MOSFET N-CH 100V 200A DDPAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 200A (Ta), Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 3.4V @ 250µA, Supplier Device Package: TO-263 (DDPAK-3), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7930 pF @ 50 V.
Weitere Produktangebote CSD19535KTT nach Preis ab 2.23 EUR bis 7.08 EUR
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CSD19535KTT | Texas Instruments |
MOSFETs 100-V N channel Nex FET power MOSFET s A 595-CSD19535KTTT |
auf Bestellung 886 Stücke: Lieferzeit 10-14 Tag (e) |
|
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| CSD19535KTT | TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 200A; Idm: 400A; 300W; D2PAK Case: D2PAK Mounting: SMD Kind of package: reel; tape Type of transistor: N-MOSFET Polarisation: unipolar On-state resistance: 4.1mΩ Gate-source voltage: ±20V Drain current: 200A Drain-source voltage: 100V Pulsed drain current: 400A Power dissipation: 300W Technology: NexFET™ Kind of channel: enhancement |
auf Bestellung 225 Stücke: Lieferzeit 14-21 Tag (e) |
|
| CSD19535KTT |
|
Hersteller: Texas Instruments
MOSFETs 100-V N channel Nex FET power MOSFET s A 595-CSD19535KTTT
MOSFETs 100-V N channel Nex FET power MOSFET s A 595-CSD19535KTTT
auf Bestellung 886 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 7.08 EUR |
| 10+ | 4.68 EUR |
| 100+ | 3.66 EUR |
| 500+ | 3.26 EUR |
| 1000+ | 2.78 EUR |
| 2500+ | 2.64 EUR |
| CSD19535KTT |
|
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; Idm: 400A; 300W; D2PAK
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 4.1mΩ
Gate-source voltage: ±20V
Drain current: 200A
Drain-source voltage: 100V
Pulsed drain current: 400A
Power dissipation: 300W
Technology: NexFET™
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; Idm: 400A; 300W; D2PAK
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 4.1mΩ
Gate-source voltage: ±20V
Drain current: 200A
Drain-source voltage: 100V
Pulsed drain current: 400A
Power dissipation: 300W
Technology: NexFET™
Kind of channel: enhancement
auf Bestellung 225 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 19+ | 3.9 EUR |
| 23+ | 3.16 EUR |
| 26+ | 2.79 EUR |
| 31+ | 2.35 EUR |
| 100+ | 2.23 EUR |