CSD19536KCS Texas Instruments
auf Bestellung 200 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 54+ | 2.78 EUR |
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Technische Details CSD19536KCS Texas Instruments
Description: MOSFET N-CH 100V 150A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 150A (Ta), Rds On (Max) @ Id, Vgs: 2.7mOhm @ 100A, 10V, Power Dissipation (Max): 375W (Tc), Vgs(th) (Max) @ Id: 3.2V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 153 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 50 V.
Weitere Produktangebote CSD19536KCS nach Preis ab 2.78 EUR bis 8.40 EUR
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CSD19536KCS | Hersteller : Texas Instruments |
 Trans MOSFET N-CH Si 100V 150A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 200 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD19536KCS | Hersteller : TEXAS INSTRUMENTS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 150A; 375W; TO220-3 Drain-source voltage: 100V Drain current: 150A On-state resistance: 2.3mΩ Type of transistor: N-MOSFET Power dissipation: 375W Polarisation: unipolar Kind of package: tube Gate charge: 118nC Technology: NexFET™ Heatsink thickness: 1.14...1.4mm Kind of channel: enhancement Gate-source voltage: ±20V Mounting: THT Case: TO220-3 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 120 Stücke: Lieferzeit 7-14 Tag (e) |
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CSD19536KCS | Hersteller : TEXAS INSTRUMENTS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 150A; 375W; TO220-3 Drain-source voltage: 100V Drain current: 150A On-state resistance: 2.3mΩ Type of transistor: N-MOSFET Power dissipation: 375W Polarisation: unipolar Kind of package: tube Gate charge: 118nC Technology: NexFET™ Heatsink thickness: 1.14...1.4mm Kind of channel: enhancement Gate-source voltage: ±20V Mounting: THT Case: TO220-3 |
auf Bestellung 120 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD19536KCS | Hersteller : Texas Instruments |
MOSFETs 100V N-CH NexFET Pwr MOSFET |
auf Bestellung 3051 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD19536KCS | Hersteller : Texas Instruments |
Description: MOSFET N-CH 100V 150A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Ta) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 100A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3.2V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 153 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 50 V |
auf Bestellung 2189 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD19536KCS Produktcode: 171204
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Transistoren > MOSFET N-CH |
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CSD19536KCS | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 100V 150A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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CSD19536KCS | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 100V 150A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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 |
CSD19536KCS | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 100V 150A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |