Weitere Produktangebote CSD19536KTT nach Preis ab 2.99 EUR bis 15.21 EUR
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CSD19536KTT | Texas Instruments |
 Trans MOSFET N-CH Si 100V 200A 3-Pin(2+Tab) DDPAK T/R |
auf Bestellung 21000 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD19536KTT | Texas Instruments |
Description: MOSFET N-CH 100V 200A DDPAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Ta) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3.2V @ 250µA Supplier Device Package: TO-263 (DDPAK-3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 153 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 50 V |
auf Bestellung 8890 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD19536KTT | Texas Instruments |
Trans MOSFET N-CH Si 100V 200A 3-Pin(2+Tab) DDPAK T/R |
auf Bestellung 206 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD19536KTT | Texas Instruments |
Trans MOSFET N-CH Si 100V 200A 3-Pin(2+Tab) DDPAK T/R |
auf Bestellung 206 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD19536KTT | Texas Instruments |
Trans MOSFET N-CH Si 100V 200A 3-Pin(2+Tab) DDPAK T/R |
auf Bestellung 78 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD19536KTT | Texas Instruments |
MOSFETs 100-V N channel Nex FET power MOSFET s A A 595-CSD19536KTTT |
auf Bestellung 6830 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD19536KTT | Texas Instruments |
Description: MOSFET N-CH 100V 200A DDPAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Ta) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3.2V @ 250µA Supplier Device Package: TO-263 (DDPAK-3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 153 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 50 V |
auf Bestellung 8890 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD19536KTT | Texas Instruments |
MOSFET N-CH 100V 200A TO263 Транзистори |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
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| CSD19536KTT |
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Hersteller: Texas Instruments
Trans MOSFET N-CH Si 100V 200A 3-Pin(2+Tab) DDPAK T/R
Trans MOSFET N-CH Si 100V 200A 3-Pin(2+Tab) DDPAK T/R
auf Bestellung 21000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 500+ | 3.35 EUR |
| CSD19536KTT |
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Hersteller: Texas Instruments
Description: MOSFET N-CH 100V 200A DDPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 250µA
Supplier Device Package: TO-263 (DDPAK-3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 153 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 50 V
Description: MOSFET N-CH 100V 200A DDPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 250µA
Supplier Device Package: TO-263 (DDPAK-3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 153 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 50 V
auf Bestellung 8890 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 500+ | 3.49 EUR |
| 1000+ | 3.26 EUR |
| 1500+ | 3.15 EUR |
| 2500+ | 3.1 EUR |
| CSD19536KTT |
|
Hersteller: Texas Instruments
Trans MOSFET N-CH Si 100V 200A 3-Pin(2+Tab) DDPAK T/R
Trans MOSFET N-CH Si 100V 200A 3-Pin(2+Tab) DDPAK T/R
auf Bestellung 206 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 30+ | 5.06 EUR |
| 35+ | 4.08 EUR |
| 36+ | 3.91 EUR |
| 100+ | 2.99 EUR |
| CSD19536KTT |
|
Hersteller: Texas Instruments
Trans MOSFET N-CH Si 100V 200A 3-Pin(2+Tab) DDPAK T/R
Trans MOSFET N-CH Si 100V 200A 3-Pin(2+Tab) DDPAK T/R
auf Bestellung 206 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 30+ | 5.06 EUR |
| 35+ | 4.17 EUR |
| 36+ | 4.06 EUR |
| 100+ | 3.16 EUR |
| CSD19536KTT |
|
Hersteller: Texas Instruments
Trans MOSFET N-CH Si 100V 200A 3-Pin(2+Tab) DDPAK T/R
Trans MOSFET N-CH Si 100V 200A 3-Pin(2+Tab) DDPAK T/R
auf Bestellung 78 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 22+ | 6.99 EUR |
| 29+ | 5.08 EUR |
| CSD19536KTT |
|
Hersteller: Texas Instruments
MOSFETs 100-V N channel Nex FET power MOSFET s A A 595-CSD19536KTTT
MOSFETs 100-V N channel Nex FET power MOSFET s A A 595-CSD19536KTTT
auf Bestellung 6830 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 7.97 EUR |
| 10+ | 5.54 EUR |
| 100+ | 3.98 EUR |
| 500+ | 3.59 EUR |
| CSD19536KTT |
|
Hersteller: Texas Instruments
Description: MOSFET N-CH 100V 200A DDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 250µA
Supplier Device Package: TO-263 (DDPAK-3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 153 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 50 V
Description: MOSFET N-CH 100V 200A DDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 250µA
Supplier Device Package: TO-263 (DDPAK-3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 153 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 50 V
auf Bestellung 8890 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 8.78 EUR |
| 10+ | 5.86 EUR |
| 100+ | 4.2 EUR |
| CSD19536KTT |
|
Hersteller: Texas Instruments
MOSFET N-CH 100V 200A TO263 Транзистори
MOSFET N-CH 100V 200A TO263 Транзистори
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 15.21 EUR |