Weitere Produktangebote CSD19536KTT nach Preis ab 2.92 EUR bis 8.78 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
CSD19536KTT | Hersteller : Texas Instruments |
 Trans MOSFET N-CH Si 100V 200A 3-Pin(2+Tab) DDPAK T/R |
auf Bestellung 21000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
 |
CSD19536KTT | Hersteller : Texas Instruments |
Description: MOSFET N-CH 100V 200A DDPAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Ta) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3.2V @ 250µA Supplier Device Package: TO-263 (DDPAK-3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 153 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 50 V |
auf Bestellung 8890 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
|
|
CSD19536KTT | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 100V 200A 3-Pin(2+Tab) DDPAK T/R |
auf Bestellung 206 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
|
|
CSD19536KTT | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 100V 200A 3-Pin(2+Tab) DDPAK T/R |
auf Bestellung 206 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
|
|
CSD19536KTT | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 100V 200A 3-Pin(2+Tab) DDPAK T/R |
auf Bestellung 78 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
 |
CSD19536KTT | Hersteller : Texas Instruments |
MOSFETs 100-V N channel Nex FET power MOSFET s A A 595-CSD19536KTTT |
auf Bestellung 6830 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
|
|
CSD19536KTT | Hersteller : Texas Instruments |
Description: MOSFET N-CH 100V 200A DDPAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Ta) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3.2V @ 250µA Supplier Device Package: TO-263 (DDPAK-3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 153 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 50 V |
auf Bestellung 8890 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
|
|
CSD19536KTT | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 100V 200A 3-Pin(2+Tab) DDPAK T/R |
Produkt ist nicht verfügbar |
|||||||||||
|
|
CSD19536KTT | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 100V 200A 3-Pin(2+Tab) DDPAK T/R |
Produkt ist nicht verfügbar |
|||||||||||
 |
CSD19536KTT | Hersteller : Texas Instruments |
MOSFET N-CH 100V 200A TO263 Група товару: Транзистори Од. вим: шт |
Produkt ist nicht verfügbar |
|||||||||||
| CSD19536KTT | Hersteller : TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 200A; Idm: 400A; 375W; D2PAK Type of transistor: N-MOSFET Technology: NexFET™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 200A Pulsed drain current: 400A Power dissipation: 375W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 2.8mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |