Weitere Produktangebote CSD19536KTTT nach Preis ab 4.92 EUR bis 11.09 EUR
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CSD19536KTTT | Hersteller : TEXAS INSTRUMENTS |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 200A; Idm: 400A; 375W; D2PAK Type of transistor: N-MOSFET Technology: NexFET™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 200A Pulsed drain current: 400A Power dissipation: 375W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 2.8mΩ Mounting: SMD Gate charge: 118nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 75 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD19536KTTT | Hersteller : Texas Instruments |
MOSFETs 100V N-Channel NexFE T Power MOSFET A 59 A 595-CSD19536KTT |
auf Bestellung 859 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD19536KTTT | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 100V 200A 3-Pin(2+Tab) DDPAK T/R |
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CSD19536KTTT | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 100V 200A 3-Pin(2+Tab) DDPAK T/R |
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| CSD19536KTTT | Hersteller : Texas Instruments |
N-канальний ПТ, Udss, В = 100, Id = 200 А, Ptot, Вт = 375, Тип монт. = smd, Ciss, пФ @ Uds, В = 12000 @ 50, Qg, нКл = 153 @ 10 В, Rds = 2,4 мОм @ 100 A, 10 В, Tексп, °C = -55...+175, Ugs(th) = 3,2 В @ 250 мкА,... Група товару: Транзистори Корпус: D2PAK-3 Anzahl je Verpackung: 50 Stücke |
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CSD19536KTTT | Hersteller : Texas Instruments |
Description: MOSFET N-CH 100V 200A DDPAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Ta) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3.2V @ 250µA Supplier Device Package: TO-263 (DDPAK-3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 153 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 50 V |
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CSD19536KTTT | Hersteller : Texas Instruments |
Description: MOSFET N-CH 100V 200A DDPAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Ta) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3.2V @ 250µA Supplier Device Package: TO-263 (DDPAK-3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 153 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 50 V |
Produkt ist nicht verfügbar |