CSD19536KTTT Texas Instruments
Hersteller: Texas InstrumentsDescription: MOSFET N-CH 100V 200A DDPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Ta)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 250µA
Supplier Device Package: TO-263 (DDPAK-3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 153 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 50 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 50+ | 6.42 EUR |
| 100+ | 5.72 EUR |
| 150+ | 5.47 EUR |
| 250+ | 5.31 EUR |
| 350+ | 5.12 EUR |
| 500+ | 4.95 EUR |
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Technische Details CSD19536KTTT Texas Instruments
Description: MOSFET N-CH 100V 200A DDPAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 200A (Ta), Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V, Power Dissipation (Max): 375W (Tc), Vgs(th) (Max) @ Id: 3.2V @ 250µA, Supplier Device Package: TO-263 (DDPAK-3), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 153 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 50 V.
Weitere Produktangebote CSD19536KTTT nach Preis ab 4.99 EUR bis 11.39 EUR
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CSD19536KTTT | Hersteller : TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 200A; Idm: 400A; 375W; D2PAK Drain-source voltage: 100V Drain current: 200A On-state resistance: 2.8mΩ Type of transistor: N-MOSFET Power dissipation: 375W Polarisation: unipolar Kind of package: reel; tape Gate charge: 118nC Technology: NexFET™ Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 400A Mounting: SMD Case: D2PAK Anzahl je Verpackung: 1 Stücke |
auf Bestellung 150 Stücke: Lieferzeit 7-14 Tag (e) |
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CSD19536KTTT | Hersteller : TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 200A; Idm: 400A; 375W; D2PAK Drain-source voltage: 100V Drain current: 200A On-state resistance: 2.8mΩ Type of transistor: N-MOSFET Power dissipation: 375W Polarisation: unipolar Kind of package: reel; tape Gate charge: 118nC Technology: NexFET™ Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 400A Mounting: SMD Case: D2PAK |
auf Bestellung 150 Stücke: Lieferzeit 14-21 Tag (e) |
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CSD19536KTTT | Hersteller : Texas Instruments |
MOSFETs 100V N-Channel NexFE T Power MOSFET A 595-CSD19536KTT |
auf Bestellung 2197 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD19536KTTT | Hersteller : Texas Instruments |
Description: MOSFET N-CH 100V 200A DDPAK Packaging: Cut Tape (CT) Package / Case: TO-263-4, D2PAK (3 Leads + Tab), TO-263AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Ta) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3.2V @ 250µA Supplier Device Package: TO-263 (DDPAK-3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 153 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 50 V |
auf Bestellung 1064 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD19536KTTT Produktcode: 150841
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