CSD19538Q2T Texas Instruments
Hersteller: Texas InstrumentsDescription: MOSFET N-CH 100V 13.1A 6WSON
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.1A (Tc)
Rds On (Max) @ Id, Vgs: 59mOhm @ 5A, 10V
Power Dissipation (Max): 2.5W (Ta), 20.2W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 6-WSON (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 454 pF @ 50 V
auf Bestellung 4250 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 250+ | 1.28 EUR |
| 500+ | 1.09 EUR |
| 1250+ | 0.89 EUR |
| 2500+ | 0.84 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details CSD19538Q2T Texas Instruments
Description: MOSFET N-CH 100V 13.1A 6WSON, Packaging: Tape & Reel (TR), Package / Case: 6-WDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13.1A (Tc), Rds On (Max) @ Id, Vgs: 59mOhm @ 5A, 10V, Power Dissipation (Max): 2.5W (Ta), 20.2W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 250µA, Supplier Device Package: 6-WSON (2x2), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 454 pF @ 50 V.
Weitere Produktangebote CSD19538Q2T nach Preis ab 0.81 EUR bis 2.02 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
CSD19538Q2T | Hersteller : TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 14.4A; 20.2W; WSON6; 2x2mm Mounting: SMD Dimensions: 2x2mm Kind of package: reel; tape Gate charge: 4.3nC Technology: NexFET™ Kind of channel: enhanced Gate-source voltage: ±20V Case: WSON6 Drain-source voltage: 100V Drain current: 14.4A On-state resistance: 49mΩ Type of transistor: N-MOSFET Power dissipation: 20.2W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2495 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||||
|
|
CSD19538Q2T | Hersteller : TEXAS INSTRUMENTS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 14.4A; 20.2W; WSON6; 2x2mm Mounting: SMD Dimensions: 2x2mm Kind of package: reel; tape Gate charge: 4.3nC Technology: NexFET™ Kind of channel: enhanced Gate-source voltage: ±20V Case: WSON6 Drain-source voltage: 100V Drain current: 14.4A On-state resistance: 49mΩ Type of transistor: N-MOSFET Power dissipation: 20.2W Polarisation: unipolar |
auf Bestellung 2495 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
 |
CSD19538Q2T | Hersteller : Texas Instruments |
MOSFET 100V, 49mOhm NexFET Power MOSFET |
auf Bestellung 42071 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
CSD19538Q2T | Hersteller : Texas Instruments |
Description: MOSFET N-CH 100V 13.1A 6WSON Packaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.1A (Tc) Rds On (Max) @ Id, Vgs: 59mOhm @ 5A, 10V Power Dissipation (Max): 2.5W (Ta), 20.2W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: 6-WSON (2x2) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 454 pF @ 50 V |
auf Bestellung 4507 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
CSD19538Q2T | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 100V 14.4A 6-Pin WSON EP T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||
|
|
CSD19538Q2T | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 100V 14.4A 6-Pin WSON EP T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||
|
|
CSD19538Q2T | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 100V 14.4A 6-Pin WSON EP T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||
 |
CSD19538Q2T | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 100V 14.4A 6-Pin WSON EP T/R |
Produkt ist nicht verfügbar |