CSD19538Q2T TEXAS INSTRUMENTS
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 14.4A; 20.2W; WSON6; 2x2mm
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 14.4A
Power dissipation: 20.2W
Case: WSON6
Gate-source voltage: ±20V
On-state resistance: 49mΩ
Mounting: SMD
Gate charge: 4.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Dimensions: 2x2mm
| Anzahl | Privatkunde |
|---|---|
| 100+ | 0.86 EUR |
| 104+ | 0.82 EUR |
| 108+ | 0.79 EUR |
| 118+ | 0.73 EUR |
| 250+ | 0.69 EUR |
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Technische Details CSD19538Q2T TEXAS INSTRUMENTS
Description: TEXAS INSTRUMENTS - CSD19538Q2T - Leistungs-MOSFET, n-Kanal, 100 V, 13.1 A, 0.049 ohm, WSON, Oberflächenmontage, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 100, Dauer-Drainstrom Id: 13.1, Qualifikation: -, MSL: MSL 1 - unbegrenzt, Verlustleistung Pd: 23, Gate-Source-Schwellenspannung, max.: 3.2, Verlustleistung: 23, Bauform - Transistor: WSON, Qualifizierungsstandard der Automobilindustrie: -, Anzahl der Pins: 6, Produktpalette: NexFET, Wandlerpolarität: n-Kanal, Kanaltyp: n-Kanal, Betriebswiderstand, Rds(on): 0.049, Rds(on)-Prüfspannung: 10, Betriebstemperatur, max.: 150, Drain-Source-Durchgangswiderstand: 0.049, SVHC: No SVHC (10-Jun-2022).
Weitere Produktangebote CSD19538Q2T nach Preis ab 0.89 EUR bis 3.56 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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CSD19538Q2T | Texas Instruments |
Description: MOSFET N-CH 100V 13.1A 6WSON Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.1A (Tc) Rds On (Max) @ Id, Vgs: 59mOhm @ 5A, 10V Power Dissipation (Max): 2.5W (Ta), 20.2W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: 6-WSON (2x2) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 454 pF @ 50 V |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD19538Q2T | Texas Instruments |
Description: MOSFET N-CH 100V 13.1A 6WSON Packaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.1A (Tc) Rds On (Max) @ Id, Vgs: 59mOhm @ 5A, 10V Power Dissipation (Max): 2.5W (Ta), 20.2W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: 6-WSON (2x2) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 454 pF @ 50 V |
auf Bestellung 1635 Stücke: Lieferzeit 10-14 Tag (e) |
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CSD19538Q2T | Texas Instruments |
MOSFETs 100V 49mOhm NexFET P ower MOSFET A 595-C A 595-CSD19538Q2 |
auf Bestellung 10675 Stücke: Lieferzeit 10-14 Tag (e) |
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Hersteller: Texas Instruments
Description: MOSFET N-CH 100V 13.1A 6WSON
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.1A (Tc)
Rds On (Max) @ Id, Vgs: 59mOhm @ 5A, 10V
Power Dissipation (Max): 2.5W (Ta), 20.2W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 6-WSON (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 454 pF @ 50 V
Description: MOSFET N-CH 100V 13.1A 6WSON
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.1A (Tc)
Rds On (Max) @ Id, Vgs: 59mOhm @ 5A, 10V
Power Dissipation (Max): 2.5W (Ta), 20.2W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 6-WSON (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 454 pF @ 50 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 250+ | 1.19 EUR |
| 500+ | 1 EUR |
| 750+ | 0.93 EUR |
| 1250+ | 0.89 EUR |
| CSD19538Q2T |
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Hersteller: Texas Instruments
Description: MOSFET N-CH 100V 13.1A 6WSON
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.1A (Tc)
Rds On (Max) @ Id, Vgs: 59mOhm @ 5A, 10V
Power Dissipation (Max): 2.5W (Ta), 20.2W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 6-WSON (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 454 pF @ 50 V
Description: MOSFET N-CH 100V 13.1A 6WSON
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.1A (Tc)
Rds On (Max) @ Id, Vgs: 59mOhm @ 5A, 10V
Power Dissipation (Max): 2.5W (Ta), 20.2W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 6-WSON (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 454 pF @ 50 V
auf Bestellung 1635 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 2.31 EUR |
| 11+ | 1.9 EUR |
| 100+ | 1.19 EUR |
| CSD19538Q2T |
|
Hersteller: Texas Instruments
MOSFETs 100V 49mOhm NexFET P ower MOSFET A 595-C A 595-CSD19538Q2
MOSFETs 100V 49mOhm NexFET P ower MOSFET A 595-C A 595-CSD19538Q2
auf Bestellung 10675 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.56 EUR |
| 10+ | 2.28 EUR |
| 100+ | 1.33 EUR |
| 500+ | 1.14 EUR |
| 1000+ | 1.04 EUR |
| 2500+ | 1.01 EUR |