Produkte > TEXAS INSTRUMENTS > CSD19538Q2T
CSD19538Q2T

CSD19538Q2T TEXAS INSTRUMENTS


suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19538q2 Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 14.4A; 20.2W; WSON6; 2x2mm
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 14.4A
Power dissipation: 20.2W
Case: WSON6
Gate-source voltage: ±20V
On-state resistance: 49mΩ
Mounting: SMD
Gate charge: 4.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Dimensions: 2x2mm
auf Bestellung 2280 Stücke:

Lieferzeit 14-21 Tag (e)
Anzahl Preis
100+0.72 EUR
106+0.68 EUR
108+0.66 EUR
Mindestbestellmenge: 100
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details CSD19538Q2T TEXAS INSTRUMENTS

Description: MOSFET N-CH 100V 13.1A 6WSON, Packaging: Tape & Reel (TR), Package / Case: 6-WDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13.1A (Tc), Rds On (Max) @ Id, Vgs: 59mOhm @ 5A, 10V, Power Dissipation (Max): 2.5W (Ta), 20.2W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 250µA, Supplier Device Package: 6-WSON (2x2), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 454 pF @ 50 V.

Weitere Produktangebote CSD19538Q2T nach Preis ab 0.66 EUR bis 3.12 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
CSD19538Q2T CSD19538Q2T Hersteller : TEXAS INSTRUMENTS suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19538q2 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 14.4A; 20.2W; WSON6; 2x2mm
Type of transistor: N-MOSFET
Technology: NexFET™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 14.4A
Power dissipation: 20.2W
Case: WSON6
Gate-source voltage: ±20V
On-state resistance: 49mΩ
Mounting: SMD
Gate charge: 4.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Dimensions: 2x2mm
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2280 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
100+0.72 EUR
106+0.68 EUR
108+0.66 EUR
Mindestbestellmenge: 100
Im Einkaufswagen  Stück im Wert von  UAH
CSD19538Q2T CSD19538Q2T Hersteller : Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19538q2 Description: MOSFET N-CH 100V 13.1A 6WSON
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.1A (Tc)
Rds On (Max) @ Id, Vgs: 59mOhm @ 5A, 10V
Power Dissipation (Max): 2.5W (Ta), 20.2W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 6-WSON (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 454 pF @ 50 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
250+1.07 EUR
500+0.93 EUR
750+0.89 EUR
1250+0.87 EUR
Mindestbestellmenge: 250
Im Einkaufswagen  Stück im Wert von  UAH
CSD19538Q2T CSD19538Q2T Hersteller : Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19538q2 MOSFETs 100V 49mOhm NexFET Power MOSFET A 595-CSD19538Q2
auf Bestellung 37573 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.87 EUR
10+1.56 EUR
100+0.96 EUR
500+0.78 EUR
1000+0.75 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
CSD19538Q2T CSD19538Q2T Hersteller : Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19538q2 Description: MOSFET N-CH 100V 13.1A 6WSON
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.1A (Tc)
Rds On (Max) @ Id, Vgs: 59mOhm @ 5A, 10V
Power Dissipation (Max): 2.5W (Ta), 20.2W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 6-WSON (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 454 pF @ 50 V
auf Bestellung 2205 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.12 EUR
10+1.99 EUR
100+1.34 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
CSD19538Q2T CSD19538Q2T Hersteller : Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19538q2 Trans MOSFET N-CH Si 100V 14.4A 6-Pin WSON EP T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CSD19538Q2T CSD19538Q2T Hersteller : Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19538q2 Trans MOSFET N-CH Si 100V 14.4A 6-Pin WSON EP T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CSD19538Q2T CSD19538Q2T Hersteller : Texas Instruments suppproductinfo.tsp?distId=10&gotoUrl=https%3A%2F%2Fwww.ti.com%2Flit%2Fgpn%2Fcsd19538q2 Trans MOSFET N-CH Si 100V 14.4A 6-Pin WSON EP T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CSD19538Q2T CSD19538Q2T Hersteller : Texas Instruments slps582.pdf Trans MOSFET N-CH Si 100V 14.4A 6-Pin WSON EP T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH