CSD19538Q2T TEXAS INSTRUMENTS
Hersteller: TEXAS INSTRUMENTS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 14.4A; 20.2W; WSON6; 2x2mm
Kind of channel: enhancement
Case: WSON6
Technology: NexFET™
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 4.3nC
Dimensions: 2x2mm
On-state resistance: 49mΩ
Drain current: 14.4A
Gate-source voltage: ±20V
Power dissipation: 20.2W
Drain-source voltage: 100V
| Anzahl | Preis |
|---|---|
| 100+ | 0.72 EUR |
| 106+ | 0.68 EUR |
| 110+ | 0.65 EUR |
| 120+ | 0.6 EUR |
| 250+ | 0.57 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details CSD19538Q2T TEXAS INSTRUMENTS
Description: MOSFET N-CH 100V 13.1A 6WSON, Packaging: Tape & Reel (TR), Package / Case: 6-WDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13.1A (Tc), Rds On (Max) @ Id, Vgs: 59mOhm @ 5A, 10V, Power Dissipation (Max): 2.5W (Ta), 20.2W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 250µA, Supplier Device Package: 6-WSON (2x2), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 454 pF @ 50 V.
Weitere Produktangebote CSD19538Q2T nach Preis ab 0.75 EUR bis 2.99 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
CSD19538Q2T | Hersteller : Texas Instruments |
Description: MOSFET N-CH 100V 13.1A 6WSON Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.1A (Tc) Rds On (Max) @ Id, Vgs: 59mOhm @ 5A, 10V Power Dissipation (Max): 2.5W (Ta), 20.2W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: 6-WSON (2x2) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 454 pF @ 50 V |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
CSD19538Q2T | Hersteller : Texas Instruments |
Description: MOSFET N-CH 100V 13.1A 6WSON Packaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.1A (Tc) Rds On (Max) @ Id, Vgs: 59mOhm @ 5A, 10V Power Dissipation (Max): 2.5W (Ta), 20.2W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: 6-WSON (2x2) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 454 pF @ 50 V |
auf Bestellung 1635 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
 |
CSD19538Q2T | Hersteller : Texas Instruments |
MOSFETs 100V 49mOhm NexFET P ower MOSFET A 595-C A 595-CSD19538Q2 |
auf Bestellung 28266 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
 |
CSD19538Q2T | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 100V 14.4A 6-Pin WSON EP T/R |
Produkt ist nicht verfügbar |
|||||||||||||||
|
|
CSD19538Q2T | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 100V 14.4A 6-Pin WSON EP T/R |
Produkt ist nicht verfügbar |
|||||||||||||||
|
|
CSD19538Q2T | Hersteller : Texas Instruments |
Trans MOSFET N-CH Si 100V 14.4A 6-Pin WSON EP T/R |
Produkt ist nicht verfügbar |